N MOSFET 400V 500A Search Results

N MOSFET 400V 500A Result Highlights (5)

Part	Manufacturer	Description
MG800FXF1JMS3	Toshiba Electronic Devices & Storage Corporation	N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET
TK190U65Z	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL
TK7R0E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB
XPJ1R004PB	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL
TK4K1A60F	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS

N MOSFET 400V 500A Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
IRU1239SC Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter Text: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK	Original	PDF	100MT160PAPBF 100MT160PA 100MT160PBPBF IRU1239SC iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
N mosfet 400v 100A Abstract: No abstract text available Text: UNISONICTECHNOLOGIESCO., LTD BYC10-600 Preliminary DIODE U LT RAFAST , LOW SWI T CH I N G LOSS RECT I FI ER DI ODE ̈ DESCRI PT I ON The UTC BYC10-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated	Original	PDF	BYC10-600 BYC10-600 BYC10L-60at QW-R601-023 N mosfet 400v 100A
Untitled Abstract: No abstract text available Text: UNISONICTECHNOLOGIESCO., LTD BYC8-600 Preliminary DIODE U LT RAFAST , LOW SWI T CH I N G LOSS RECT I FI ER DI ODE ̈ DESCRI PT I ON The UTC BYC8-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET.	Original	PDF	BYC8-600 BYC8-600 QW-R601-025
IRFIB8N50K Abstract: No abstract text available Text: PD - 94444A SMPS MOSFET IRFIB8N50K Applications l Switch Mode Power Supply SMPS l UninterruptIble Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 500V 290mΩ 6.7A Benefits l Low Gate Charge Qg results in Simple Drive Requirement	Original	PDF	4444A IRFIB8N50K O-220 I840G O-22O IRFIB8N50K
Untitled Abstract: No abstract text available Text: PD - 94444A SMPS MOSFET IRFIB8N50K Applications l Switch Mode Power Supply SMPS l UninterruptIble Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 500V 290mΩ 6.7A Benefits l Low Gate Charge Qg results in Simple Drive Requirement	Original	PDF	4444A IRFIB8N50K O-220 08-Mar-07
IRFIB8N50K Abstract: No abstract text available Text: PD - 94444A SMPS MOSFET IRFIB8N50K Applications l Switch Mode Power Supply SMPS l UninterruptIble Power Supply l High Speed Power Switching HEXFET Power MOSFET VDSS RDS(on) typ. ID 500V 290mΩ 6.7A Benefits l Low Gate Charge Qg results in Simple Drive Requirement	Original	PDF	4444A IRFIB8N50K O-220 12-Mar-07 IRFIB8N50K
N mosfet 100v 500A Abstract: mosfet 600V 20A TK20A60U to220sis MOSFET 400V TO-220 N mosfet 400v 500A TK20A60UIAR Mosfet 600V, 20A TK12J60U TK12A60U Text: 08cj-H-01 600V系新構造 DTMOS シリーズ 600V Power MOSFETs with New Super Junction structure ◆ 近年家電製品の電源効率の向上や、セットの小型化が要求されており、これらの要求に対してスーパージャンクション構造を適用することで、シリコン固有の臨界電界で決定する理論限界を	Original	PDF	08cj-H-01 TK40J60T80mMax. TK20A60UQg 00V/20A TK20A60UIAR 00A/s O-220SIS TK12A60U TK12D60U O-220 N mosfet 100v 500A mosfet 600V 20A TK20A60U to220sis MOSFET 400V TO-220 N mosfet 400v 500A Mosfet 600V, 20A TK12J60U TK12A60U
BYC20G Abstract: No abstract text available Text: UNISONICTECHNOLOGIESCO., LTD BYC20-600 Preliminary DIODE RECT I FI ER DI ODE, H Y PERFAST ̈ DESCRI PT I ON The UTC BYC20-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss in associated MOSFET. The UTC BYC20-600 is ideally used in half-bridge lighting	Original	PDF	BYC20-600 BYC20-600 BYC20L-600-TA2-T BYC20at QW-R601-027 BYC20G
SCS205KG Abstract: SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ Text: SiC Power Devices vol.3 The Industry's First Mass-Produced "Full SiC" Power Modules ROHM now oﬀers SiC power devices featuring a number of characteristics, including: high breakdown voltage, low power consumption, and high-speed switching operation not provided by conventional silicon devices.	Original	PDF	000A-class) 56P6733E 1500SG SCS205KG SCS220KE2 SCS240KE2 SCS212AJ SCS230KE2 SCS210AJ
Untitled Abstract: No abstract text available Text: UNISONICTECHNOLOGIESCO., LTD BYC5-600 Preliminary DIODE U LT RAFAST , LOW SWI T CH I N G LOSS RECT I FI ER DI ODE ̈ DESCRI PT I ON The UTC BYC5-600 is a rectifier diode. It provides the designers with ultra-fast switching and low switching loss. The UTC BYC5-600 is suitable for half-bridge lighting ballasts,	Original	PDF	BYC5-600 BYC5-600 BYC5L-600-TA2-T BYC5G-600-TA2-T O-220-2 QW-R601-024
transistor 415 Abstract: diode 500A transistor working principle STTA806D AN-603 STTA2006P transistor 600v 500a transistor 2N2 Text:  APPLICATION NOTE TURBOSWITCH TM IN A PFC BOOST CONVERTER B. Rivet 1.INTRODUCTION 2.PARAMETERS DEFINITION SGS-THOMSON offers two families of 600V ultrafast diodes TURBOSWITCH”A” and ”B” having different compromises between the forward c h a ra ct e ris t ic s a n d t h e re v e rs e re c ov ery	Original	PDF
STTA806D Abstract: AN603 diode 400v 2A ultrafast TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE STTA2006P transistor Ip transistor working principle transistor 600v 500a 600V 20A 50KHz MOSFET Text: AN603 APPLICATION NOTE TURBOSWITCH IN A PFC BOOST CONVERTER INTRODUCTION STMicroelectronics offers two families of 600V ultrafast diodes TURBOSWITCH"A" and "B" having different compromises between the forward characteristics and the reverse recovery characteristics.	Original	PDF	AN603 STTA806D AN603 diode 400v 2A ultrafast TURBOSWITCH ULTRA-FAST HIGH VOLTAGE DIODE STTA2006P transistor Ip transistor working principle transistor 600v 500a 600V 20A 50KHz MOSFET
SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A Abstract: data sheet IC 7450 APT30GP60BSC T0-247 APT10SC60 Text: TYPICAL PREFORMANCE CURVES APT30GP60BSC APT30GP60BSC 600V POWER MOS 7 IGBT TO-247 A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode	Original	PDF	APT30GP60BSC O-247 SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A data sheet IC 7450 APT30GP60BSC T0-247 APT10SC60
relay finder 45.61 Abstract: reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415 Text: 2295 Technical portal and online community for Design Engineers - www.element-14.com Relays & Solenoids Page 2343 2336 2310 2347 2298 2320 2346 8 & 11 Pin Plug-In Power Relays. . . . . . . . . . . . . Automotive Relays . . . . . . . . . . . . . . . . . . . . . . . . .	Original	PDF	element-14 Safety10 A331-1-C2A7M A331-1-C2-A73 24Vdc 110Vac 240Vac A331-1-C2-A7D relay finder 45.61 reed 3500 2301 151 MT2C93419 reed 3500 2301 tyco igbt module 25A 1200V 5V SPST DIL Reed Relay Transistor tag 9013 Triac TAG 9013 3258 smd led varistor BS415

BYT12-1000 Abstract: GTO triac power IGBT MOSFET transistor GTO SCR di IR thyristor manual IR thyristor manual ST GTO thyristor driver power IGBT MOSFET GTO SCR diode power bjt advantages and disadvantages GTO thyristor Application notes Semiconductor Group igbt Text: APPLICATION NOTE CHARACTERISTICS OF POWER SEMICONDUCTORS by J. M. Peter ABSTRACT Advantages and disadvantages are summarised, and the relative cost of each solution indicated. This paper aims to give a brief overview of the essential characteristics of power semiconductors,	Original	PDF
LE79Q2281 Abstract: 1N6761-1 2N2369AU 2N2907AUB BR17 datasheet transistor SI 6822 Dimming LED aplications Dimming LED Driver aplications GC4600 IC ZL70572 Text: Product Portfolio 2013-2014 ng-edge Embed Power Matters. About Microsemi Microsemi Corporation is a leading provider of semiconductor solutions differentiated by power, security, reliability and performance. The company concentrates on providing solutions for applications where power matters, security	Original	PDF
APT13GP120BSC Abstract: T0-247 Text: APT13GP120BSC 1200V POWER MOS 7 IGBT A new generation of high voltage power IGBTs. Using punch-through technology and a proprietary metal gate, this IGBT has been optimized for very fast switching, making it ideal for high frequency, high voltage switch-mode	Original	PDF	APT13GP120BSC O-247 Col610) APT13GP120BSC T0-247
MOSFET IRF 630 Abstract: No abstract text available Text: vx-b’J=X ll7-MOSFET vx-n SERIES POWER MOSFET n 9+jf$+jkH O U T L I N E D I M E N S I O N S Case : E-pack 1 i : iate 2 4 1 IIraln 3 : Source [Unit : mm] ‘I - 1; -‘J 1 -7 $, &I 11 2 3-, P12, 7-l Q f ‘g ( 7’: $ 1 1 Lead type is available. See P. 12, 7-l	Original	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Text: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	PDF	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
1N4148 SOD-80 Abstract: AN-6078SC fairchild AN-6078SC atx power 500W 24 pin smd transistor 2f Core-ERL35 TRANSFORMER ERL35 smd transistor 3 fz C20A smd VC1031 Text: www.fairchildsemi.com AN-6078SC FAN480X PFC+PWM集成控制器 FAN4800A / FAN4800C / FAN4801 / FAN4802 FAN480X可取代FAN4800與ML4800，只需在周邊 1. 簡介這篇應用指南用於幫助使用者使用FAN480X設計高效率的電源供應器，FAN480X由採用平均電流控制	Original	PDF	AN-6078SC FAN480X FAN4800A FAN4800C FAN4801 FAN4802 FAN480XFAN4800ML4800 FAN480X FAN4801/2PFC 1N4148 SOD-80 AN-6078SC fairchild AN-6078SC atx power 500W 24 pin smd transistor 2f Core-ERL35 TRANSFORMER ERL35 smd transistor 3 fz C20A smd VC1031
SA55BA60 Abstract: tig ac inverter circuit MOSFET welding INVERTER tig welding machine INVERTER ARC WELDING igbt based welding machine inverter new welding machine circuit SA55BA602 bjt 40A 600V part number MOSFET welding INVERTER 200A Text: APPLICATION NOTE AN-1045 International Rectifier • 233 Kansas Street El Segundo CA 90245 USA AC TIG Welding: Output Inverter Design Basics By A. Roccaro, R. Filippo, M. Salato Topics Covered Introduction Application on TIG welding Full Bridge Inverter Half-Bridge Inverter	Original	PDF	AN-1045 AN-955 AN-1012 AN-1023 SA55BA60 tig ac inverter circuit MOSFET welding INVERTER tig welding machine INVERTER ARC WELDING igbt based welding machine inverter new welding machine circuit SA55BA602 bjt 40A 600V part number MOSFET welding INVERTER 200A
transistor t2a surface mount Abstract: A506 ed1b a506 diode STTA506B a506b Text: f Z T SGS-THOMSON Ä T# RfflD g^(ô ILI ¥^@R3D(Si STTA506B(-TR) TURBOSWITCH " A " . ULTRA-FAST HIGH VOLTAGE DIODE MAIN PRODUCT CHARACTERISTICS If(av) 5A V rrm 600 V 1.5V V f (max) tr r (typ) PRELIMINARY DATASHEET 20 ns FEATURES AND BENEFITS • SPECIFIC TO THE FOLLOWING OPERATIONS:	OCR Scan	PDF	STTA506B transistor t2a surface mount A506 ed1b a506 diode a506b
IRF 544 N MOSFET Abstract: Spice 2 computer models for hexfets 4af2NPP IR transistor D586 induction cooker fault finding circuit diagrams TRANSISTOR mos fet D482 electronics digest transistor D357 equivalent D515 transistor 1RF511 Text: International S R ectifier HEXFET DAIABOOK POWER MOSFET APPLICATION AND PRODUCT DATA 1985 THIRD EDITION PUBLISHED BY INTERNATIONAL RECTIFIER, 233 KANSAS ST., EL SEGUNDO, CALIFORNIA 90245 The information presented in this DATABOOK is believed to be accurate and reliable. However, International Rectifier can assume no	OCR Scan	PDF
schematic surge protector ac mains Abstract: No abstract text available Text: CLP270M Application Specific Discretes A.S.D. OVERVOLTAGE AND OVERCURRENT p r o t e c t io n f o r t e l e c o m l in e PRELIMINARY DATASHEET MAIN APPLICATIONS Any telecom equipm ent submitted to transient overvoltages and lightning strikes such as : • Analog and ISDN line cards	OCR Scan	PDF	CLP270M schematic surge protector ac mains

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N MOSFET 400V 500A Search Results

N MOSFET 400V 500A Result Highlights (5)

N MOSFET 400V 500A Datasheets Context Search

IRU1239SC

N mosfet 400v 100A

Untitled

IRFIB8N50K

Untitled

IRFIB8N50K

N mosfet 100v 500A

BYC20G

SCS205KG

Untitled

transistor 415

STTA806D

SILICON CARBIDE POWER SCHOTTKY DIODE 600V 30A

relay finder 45.61

BYT12-1000

LE79Q2281

APT13GP120BSC

MOSFET IRF 630

65e9 transistor

1N4148 SOD-80

SA55BA60

transistor t2a surface mount

IRF 544 N MOSFET

schematic surge protector ac mains