CRCW08052201FKEA
Abstract: CRCW080510R0FKE MRF21010-1 MRF21010
Text: Freescale Semiconductor Technical Data Document Number: MRF21010-1 Rev. 10, 10/2008 RF Power Field Effect Transistor MRF21010LR1 N-Channel Enhancement-Mode Lateral MOSFET 2110-2170 MHz, 10 W, 28 V LATERAL N-CHANNEL BROADBAND RF POWER MOSFET • Typical W-CDMA Performance: -45 dBc ACPR, 2170 MHz, 28 Volts,
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MRF21010--1
MRF21010LR1
CRCW08052201FKEA
CRCW080510R0FKE
MRF21010-1
MRF21010
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72632
Abstract: SUM55N03-16P
Text: SUM55N03-16P Vishay Siliconix New Product N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 55 0.024 @ VGS = 4.5 V 45 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized 100% Rg Tested
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SUM55N03-16P
O-263
SUM55N03-16P--E3
08-Apr-05
72632
SUM55N03-16P
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SUM55N03-16P
Abstract: No abstract text available
Text: SUM55N03-16P Vishay Siliconix New Product N-Channel 30-V D-S 175_C MOSFET FEATURES PRODUCT SUMMARY V(BR)DSS (V) 30 rDS(on) (W) ID (A) 0.016 @ VGS = 10 V 55 0.024 @ VGS = 4.5 V 45 D D D D TrenchFETr Power MOSFET 175_C Junction Temperature PWM Optimized 100% Rg Tested
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SUM55N03-16P
O-263
SUM55N03-16P--E3
18-Jul-08
SUM55N03-16P
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SUM45N25-58-E3
Abstract: SUM45N25-58 sum45n25
Text: SUM45N25-58 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) ID (A) 0.058 @ VGS = 10 V 45 0.062 @ VGS = 6 V
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SUM45N25-58
O-263
SUM45N25-58
S-51396--Rev.
25-Jul-05
SUM45N25-58-E3
sum45n25
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s3-1515
Abstract: SUM45N25-58
Text: SUM45N25-58 New Product Vishay Siliconix N-Channel 250-V D-S 175_C MOSFET FEATURES D TrenchFETr Power MOSFETS D 175_C Junction Temperature D New Low Thermal Resistance Package PRODUCT SUMMARY V(BR)DSS (V) 250 rDS(on) (W) ID (A) 0.058 @ VGS = 10 V 45 0.062 @ VGS = 6 V
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SUM45N25-58
O-263
SUM45N25-58N-Channel
S-31515--Rev.
14-Jul-03
s3-1515
SUM45N25-58
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Untitled
Abstract: No abstract text available
Text: VFT30-28 VHF POWER MOSFET N-Channel Enhancement Mode DESCRIPTION: The VFT30-28 is Designed for General Purpose Class AB Power Amplifier Applications up to 175 MHz. PACKAGE STYLE .380 4L FLG B FEATURES: .112 x 45° A S • PG = 14 dB Typ. at 30 W /175MHz • 10:1 Load VSWR Capability
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VFT30-28
VFT30-28
/175MHz
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SUB45N05-20L
Abstract: SUP45N05-20L
Text: SUP/SUB45N05-20L New Product Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 50 "45 a 0.020 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S
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SUP/SUB45N05-20L
O-220AB
O-263
SUB45N05-20L
SUP45N05-20L
O-220AB
O-263)
O-263
S-62982--Rev.
12-Jul-99
SUB45N05-20L
SUP45N05-20L
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IAf630
Abstract: sfn02804 RS630 BUZ73 sfn02204 SFN02814 tx134 sgsp567 SGSP367 2SK400
Text: MOSFET Item Number Part Number Manufacturer V BR OSS (V) loss Max A) Po Max (W) ros (on) (Ohms) Toper Max Package Style N-Channel Enhancement-Type, (Cont'd) 5 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 810 600p 60n 60n 2.0 1.3 1.3 1.3 1.3 600p 600p
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RRF620
2SK755
2SK782
TX124
IRFJ220
SFN02804
SFN02814
SFN204A3
YTF220
YTF620
IAf630
RS630
BUZ73
sfn02204
tx134
sgsp567
SGSP367
2SK400
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SUB45N05-20L
Abstract: SUP45N05-20L
Text: SUP/SUB45N05-20L Vishay Siliconix N-Channel 50-V D-S , 175_C MOSFET, Logic Level PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.018 @ VGS = 10 V 50 " a "45 0.020 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB45N05-20L
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SUP/SUB45N05-20L
O-220AB
O-263
SUB45N05-20L
SUP45N05-20L
S-21855--Rev.
14-Oct-02
SUB45N05-20L
SUP45N05-20L
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AGR26045EF
Abstract: J500 JESD22-C101A
Text: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,
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AGR26045EF
AGR26045EF
po8109-9138
DS04-226RFPP
DS04-110RFPP)
J500
JESD22-C101A
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Untitled
Abstract: No abstract text available
Text: FM600TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 300 Amperes/100 Volts A D F G G H K Q L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED
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FM600TU-2A
Amperes/100
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Untitled
Abstract: No abstract text available
Text: FM600TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 300 Amperes/100 Volts A D F G G Q H K N X (11 PLACES) L L M P AB Z AB AC N P R AD 7 B E AE J 1 13 14 W T S B A AF U TC MEASURED
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FM600TU-2A
Amperes/100
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Untitled
Abstract: No abstract text available
Text: FM600TU-3A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 300 Amperes/150 Volts A D F G G H K Q L P AB E AE J 7 B N P X (11 PLACES) Z AB AC R AD N L M 1 13 14 T W B A S AF U TC MEASURED
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FM600TU-3A
Amperes/150
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Untitled
Abstract: No abstract text available
Text: FM600TU-3A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-PACK High Power MOSFET Module 300 Amperes/150 Volts A D F G G Q H K N X (11 PLACES) L L M P AB Z AB AC N P R AD 7 B E AE J 1 13 14 W T S B A AF U TC MEASURED
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FM600TU-3A
Amperes/150
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Untitled
Abstract: No abstract text available
Text: Preliminary Data Sheet June 2004 AGR26045EF 45 W, 2.535 GHz—2.655 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR26045EF is a high-voltage, gold-metalized, enhancement mode, laterally diffused metal oxide semiconductor LDMOS RF power transistor suitable for ultrahigh-frequency (UHF) applications,
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AGR26045EF
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Untitled
Abstract: No abstract text available
Text: FM600TU-2A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/100 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED
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FM600TU-2A
Amperes/100
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Untitled
Abstract: No abstract text available
Text: FM600TU-3A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/150 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED
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FM600TU-3A
Amperes/150
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FM600TU-2A
Abstract: "MOSFET Module" N mosfet 100v 600A welder mosfet inverter welder circuit
Text: FM600TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/100 Volts A D F G G Q H K L P AB E N AE J 7 B Z AB AC P X (11 PLACES) L M R AD N 1 13 14 T W B A S AF 6 12 U TC MEASURED POINT
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FM600TU-2A
Amperes/100
FM600TU-2A
"MOSFET Module"
N mosfet 100v 600A
welder mosfet
inverter welder circuit
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power mosfet 80v 150a
Abstract: rad7 n channel mosfet 500 mA 400 v
Text: FM600TU-3A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-Pack High Power MOSFET Module 300 Amperes/150 Volts A D F G G Q H K L P AB E N AE J 7 B Z AB AC P X (11 PLACES) L M R AD N 1 13 14 T W B A S AF 6 12 U
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FM600TU-3A
Amperes/150
power mosfet 80v 150a
rad7
n channel mosfet 500 mA 400 v
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Untitled
Abstract: No abstract text available
Text: FM600TU-2A Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 724 925-7272 www.pwrx.com 6-Pack High Power MOSFET Module 300 Amperes/100 Volts A D F G G Q H K L P AB E N AE J 7 B Z AB AC P X (11 PLACES) L M R AD N 1 13 14 T W B A S AF 6 12 U
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FM600TU-2A
Amperes/100
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Untitled
Abstract: No abstract text available
Text: FM600TU-3A Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 724 925-7272 6-Pack High Power MOSFET Module 300 Amperes/150 Volts A D F G G Q H K P AB E AE J 7 B Z AB N P X (11 PLACES) L AC R AD N M L 1 13 14 T W B A S AF U TC MEASURED
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FM600TU-3A
Amperes/150
MOS01
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FS50UMH-03 HIGH-SPEED SWITCHING USE FS50UMH-03 # • 2.5V DRIVE • V d s s . 3 0 V • TDS ON (MAX) . 2 2 m ii
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FS50UMH-03
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FM15TF-9
Abstract: JRC 062 gun diode bias symbol JRC FF 30
Text: MITSUBISHI MOSFET MODULE { F M 1 5 T F -9 , - 1 0 MEDIUM POWER SWITCHING USE INSULATED TYPE Dimensions in mm OUTUNE DRAWING 90 6 116 1 1 6 13 FM15TF-9, -10 GuN S jh 1G vN SvN G w N Sw N _ _64_ ^ ' 76 Tab # 250. t = 0.8 T ab # 110, t - 0.5 B h • Id . 15A
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FM15TF-9,
E80276
E80271
FM15TF-9
JRC 062
gun diode bias symbol
JRC FF 30
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Pch POWER MOSFET FX30UMJ-2 ^ e V a<a s° HIGH-SPEED SWITCHING USE FX30UMJ-2 OUTLINE DRAWING Dimensions in mm 4.5 1.3 © © o • 4 V D R IV E •V dss o - .-1 0 0 V I
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FX30UMJ-2
100ns
O-220
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