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    N CHANNEL J FET Search Results

    N CHANNEL J FET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TLP294-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TLP295-4 Toshiba Electronic Devices & Storage Corporation Photocoupler (phototransistor output), DC input, 3750 Vrms, 4 channel, SO16 Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation

    N CHANNEL J FET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2N4092

    Abstract: No abstract text available
    Text: 2N4092 N-CHANNEL J-FET Qualified Per MIL-PRF-19500/431 2.79 T. 1 of 1 Home Part Number: 2N4092 Online Store 2N4092 Diodes N- C HANNEL J - F ET Q ualified Per M IL- PRF - 1 9 5 0 0 / 4 3 1 Transistors


    Original     		PDF 2N4092 MIL-PRF-19500/431 com/2n4092 2N4092

    2N4093

    Abstract: No abstract text available
    Text: 2N4093 N-CHANNEL J-FET Qualified per MIL-PRF-19500/431 8.59 Tr. 1 of 1 Home Part Number: 2N4093 Online Store 2N4093 Diodes N- C HANNEL J - F ET Q ualified per M IL- PRF -1 9 5 0 0 / 4 3 1 Transistors


    Original     		PDF 2N4093 MIL-PRF-19500/431 com/2n4093 2N4093

    2SK125

    Abstract: FET 2SK125 y-parameter 2SK125 sony 2sk125 equivalent 2SK12S
    Text: SONY CORP/ COMPONENT PRODS 4TE J> • ñ3flE3ñ3 0003055 7 SONY 2SK125 SO N Y Silicon N-Channel Junction FET Description T ^ J /- 2 S ~ Package Outline Unit: mm The 2SK125 is an N-Channel silicon junction type field effect transistor developed for low-noise


    OCR Scan     		PDF 2SK125 2SK125 23fl3 Q0030b3 T-29-25 100MHz 100MHz FET 2SK125 y-parameter 2SK125 sony 2sk125 equivalent 2SK12S

    MPS 0715

    Abstract: 2N5358 10MF 2N2222 MPQ2001 FET small signal transistors motorola 2N2222 npn small signal current gain 2N2222 transistor 2n2222 mps 2N2222 motorola
    Text: Order this document by MPQ2001/D MOTOROLA MPQ2001 Semiconductors BOX 2 0912 • P H O E N IX , A R IZ O N A 85036 Advance Inform ation 2 - NPN SILICON BIPOLAR 2 -N-CHANNEL J-FET QUAD TRANSISTORS SILICON ANNULAR* NPN BIPOLAR, N-CHANNEL J-FET QUAD TRANSISTOR


    OCR Scan     		PDF MPQ2001/D MPQ2001 2N2222 2N5358 MPQ2001/D MPS 0715 2N5358 10MF 2N2222 MPQ2001 FET small signal transistors motorola 2N2222 npn small signal current gain 2N2222 transistor 2n2222 mps 2N2222 motorola

    Untitled

    Abstract: No abstract text available
    Text: NEC NEC Electronics Inc. D e scrip tio n /¿PC356 J-FET INPUT OPERATIONAL AMPLIFIER Pin C o n figu ratio n The juPC356 is a J -F E T input operational amplifier with matched P-channel ion implanted J -F E T s. In addition to the obvious advantages of J -F E T inputs, the //PC356 is


    OCR Scan     		PDF PC356 juPC356 //PC356 LF356 ATPC356 //PC356

    2SK1271

    Abstract: TEA-1035 MEI-1202 TC-2380 24 V 20 A diode
    Text: NEC J— r W DATA SHEET N-CHANNEL MOS FIELD EFFECT POWER TRANSISTOR 2SK1271 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE PACKAGE DIMENSIONS in millimeters 03.2 ±0.2 DESCRIPTION The 2SK1271 is N-channel M O S Field Effect Transistor de­ signed fo r high voltage switching applications.


    OCR Scan     		PDF 2SK1271 IEI-1209) TEA-103 TEA-1035 TEI-1202 MEI-1202 IEI-1207 TC-2380 24 V 20 A diode

    PN4391

    Abstract: PN4392 IEC134 PN4393 Vgsoff
    Text: PN4391 to 4393 J V _ N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc. QUICK REFERENCE DATA


    OCR Scan     		PDF PN4391 PN4392 PN4393 bb53131 0035A3b IEC134 PN4393 Vgsoff

    Untitled

    Abstract: No abstract text available
    Text: \v jì il }\ \\ n a il il vi n /± ± \ il /±±\ il u Æ w txon m mmmm / j u ,- i i _ DEVICES. INC. N-CHANNEL ENHANCEMENT MOS FET 100V. 9.2A, SDF120 SDF120 SDF120 0.2 7 n PARAMETER JAA JAB JDA FEATURES • • •


    OCR Scan     		PDF SDF120 SDF120

    BFW61

    Abstract: FET BFW61 N CHANNEL FET BFW61 transistor TO-72 727 Transistor power values VDS-15 ad357
    Text: J BFW61 '- N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed for general purpose amplifiers.


    OCR Scan     		PDF BFW61 200/iA BFW61 FET BFW61 N CHANNEL FET BFW61 transistor TO-72 727 Transistor power values VDS-15 ad357

    2N4393

    Abstract: 2N4392 2N4391 transistor 4393
    Text: 2N4391 to 4393 J ' - N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes with the gate connected to the case. The transistors are intended for low power, chopper or switching,


    OCR Scan     		PDF 2N4391 2N4392 2N4393 003537b 2N4393 transistor 4393

    TC-2394

    Abstract: transistor D 2394 nec 2501 PT-235 2SK1295 MEI-1202 TEA-1035 nec 2702
    Text: DATA SHEET NEC J HMOS FIELD EFFECT POWER TRANSISTOR 2SK1295 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1295 is N-channel MOS Field Effect Transistor de­ PACKAGE DIMENSIONS in millimeters signed for solenoid, motor and lamp driver.


    OCR Scan     		PDF 2SK1295 2SK1295 IEI-1209) TC-2394 transistor D 2394 nec 2501 PT-235 MEI-1202 TEA-1035 nec 2702

    A2147

    Abstract: 2sk109
    Text: 2SK1098-MR FUJI P O W E R M O S - F E T N-CHANNEL SILICON POWER MOS-FET p j j SERIES j • Outline Drawings ■ Features • H ich current • Lo w on-resistance • No second ary breakdow n • Lo w driving pow er • High forw ard T ran sco n d u ctan ce


    OCR Scan     		PDF 2SK1098-MR 5388-7SS7 A2147 2sk109

    Untitled

    Abstract: No abstract text available
    Text: 7110flEb □ G b ? c17S 7T3 « P H I N J in J112 J113 y V N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended for applications such as analog switches, choppers, commutators etc.


    OCR Scan     		PDF 7110flEb

    SIPMOS

    Abstract: 2SK1509
    Text: 2SK1509 S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET p • Features S E R IE S j j j Outline Drawings • High cu rren t • Low n o-resistance • N o secondary b reakd ow n • Low driving p ow er • High fo rw a rd T ran scon d u ctan ce


    OCR Scan     		PDF 2SK1509 03j6T O-22QAB SC-46 SIPMOS

    BFW61

    Abstract: No abstract text available
    Text: BFW61 J V N-CHANNEL SILICON FET Symmetrical n-channel silicon planar epitaxial junction field-effect transistor in a TO-72 metal envelope with the shield lead connected to the case. The transistor is designed fo r general purpose amplifiers. QUICK REFERENCE DATA


    OCR Scan     		PDF BFW61 btj53T31 357T2 BFW61

    J112

    Abstract: J113 J111 transistor J112 Scans-00946
    Text: 711002b □□b?c175 7^3 J111 J112 J113 IPHIN J V. N-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Symmetrical silicon n-channel junction FETs in plastic TO-92 envelopes. They are intended fo r applications such as analog switches, choppers, commutators etc. Features


    OCR Scan     		PDF 711002b 0Clb7cl75 3150S2 J112 J113 J111 transistor J112 Scans-00946

    Untitled

    Abstract: No abstract text available
    Text: T em ic Semiconductors S08 DMOS FETs T0220 T052 TO237 T092 2 lead T092 (3 lead) Low-Power MOS N-Channel Enhancement-Mode (continued) DMOS FETs - Low-Power MOS P-Channel Enhancement-Mode j mm>xm Ì Q K ? Ì |g ir ( M ) 14-Pin Sidebraze (P) and Plastic (J)


    OCR Scan     		PDF T0220 14-Pin VQ2001J VQ200IP VQ2004J T0236 TP0101T TP0202T TP06I0T VP06I0T

    Untitled

    Abstract: No abstract text available
    Text: 2N4856 to 4861 J V_ N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes w ith the gate connected to the case. The transistors are intended for low power, chopper or switching, applications in industrial service.


    OCR Scan     		PDF 2N4856 2N4858 2N4861 2N4857 2N4860 2N4856 2N4859

    2SK1282

    Abstract: A 1282 transistor TC-2381 MEI-1202 TEA-1035
    Text: DATA SHEET NEC J MOS FIELD EFFECT POWER TRANSISTOR 2SK1282,1282-Z SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK1282/1282-Z is N-channel MOS Field Effect Transistor designed for solenoid, motor and lamp driver. FEATURES • Low On-state Resistance


    OCR Scan     		PDF 2SK1282 1282-Z 2SK1282-Z IEI-1209) A 1282 transistor TC-2381 MEI-1202 TEA-1035

    BUK617-500AE

    Abstract: TRANSISTOR C 557 B TIC 136 Transistor
    Text: PHILIPS INTERNATIONAL b5E J> H 7110a5t. OObMETb 37T • P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK617-500AE/BE Fast recovery diode FET_ GENERAL DESCRIPTION N-channel enhancement mode


    OCR Scan     		PDF 7110a5t. BUK617-500AE/BE OT227B BUK617 -500AE BUK617-500AE BUK617-500AE TRANSISTOR C 557 B TIC 136 Transistor

    nec 7915

    Abstract: LF356 equivalent L9810 7915 pin configuration PC356 LF356 RS 7915 7915 nec
    Text: N E C ELECTRONI CS 6427525 N E C I NC öl E LECTRONICS I>e | b427SSS O O lC m ^ 81C 10093 INC NEC Electronics Inc. _ ' The //PC356 is a J-FET input operational am plifier with matched P-channel ion implanted J-FETs. In addition to


    OCR Scan     		PDF b427SSS uPC356 M2752S nec 7915 LF356 equivalent L9810 7915 pin configuration PC356 LF356 RS 7915 7915 nec

    BUK582-100A

    Abstract: 2T3 transistor
    Text: PHILIPS INTERNATIONAL bSE J> • 711Ga2b G0b42û4 LSÔ « P H I N Philips Semiconductors Product Specification PowerMOS transistor BUK582-100A Logic level GENERAL DESCRIPTION N-channel enhancement mode


    OCR Scan     		PDF 0Qb42flS BUK582-100A OT223 -ID/100 OT223. 2T3 transistor

    2N4856

    Abstract: 2N4858 2N4860 2N4857 2N48 2N4859 2N4861
    Text: 2N4856 to 4861 J v _ N-CHANNEL FETS Silicon symmetrical n-channel depletion type junction field-effect transistors in TO-18 metal envelopes w ith the gate connected to the case. The transistors are intended fo r low power, chopper o r switching, applications in industrial service.


    OCR Scan     		PDF 2N4856 2N4858 2N485g 2N4861 2N4857 2N4859 2N4858 2N4860 2N48 2N4861

    IMF6485

    Abstract: TO71 fet
    Text: IM F6485 Low Noise Dual Monolithic N-Channel J F E T FEATURES GENERAL DESCRIPTION • ê n < 10nV/vHz @ 10Hz This N-Channel Junction FET is characterized fo r ultra low noise applications requiring tig h tly co n trolled and speci­ fied noise parameters at 10 Hz and 1000 Hz. T ig h t match­


    OCR Scan     		PDF 10nV/VHT@ 40MV/Â IMF6485 10sec. IMF6485 TO71 fet