IRF P CHANNEL MOSFET 200V 20A
Abstract: P Channel Power MOSFET IRF IRF P CHANNEL MOSFET N CHANNEL MOSFET 10A 1000V IRF P-Channel FET 200v 20A IRF P CHANNEL MOSFET 10A 100V p channel mosfet 100v 70a to-252 IRF P CHANNEL MOSFET 100v IRF P-Channel FET 100v IRF P CHANNEL MOSFET TO-252
Text: 30V 1000V 200V 100V 0.014Ω 60V RF1S9630SM Note 200V, 6.5A, 0.800Ω RF1S4N100SM 1000V, 4.3A, 3.500Ω RF1S630SM 200V, 9A, 0.400Ω 0A TO 10A S E M I C O N D U C TO R 3.500Ω 0.800Ω 0.500Ω 0.400Ω 0.18Ω 0.300Ω 0.200Ω 0.160Ω 0.080Ω 0.077Ω
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RF1S9630SM
RF1S4N100SM
RF1S630SM
RF1S70N06SM
RF1S70N03SM
O-263AB)
LC96586
IRF P CHANNEL MOSFET 200V 20A
P Channel Power MOSFET IRF
IRF P CHANNEL MOSFET
N CHANNEL MOSFET 10A 1000V
IRF P-Channel FET 200v 20A
IRF P CHANNEL MOSFET 10A 100V
p channel mosfet 100v 70a to-252
IRF P CHANNEL MOSFET 100v
IRF P-Channel FET 100v
IRF P CHANNEL MOSFET TO-252
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J656
Abstract: 2SJ656 p3nb90
Text: Ordering number : ENN7684 2SJ656 P-Channl Silicon MOSFET 2SJ656 General-Purpose Switching Device Features • • • Package Dimensions Low ON-resistance. Ultrahigh-speed switching. 4V drive. Motor drive, DC / DC converter. unit : mm 2063A [2SJ656] 10.0 5.6
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ENN7684
2SJ656
2SJ656]
O-220ML
J656
2SJ656
p3nb90
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IRF130
Abstract: No abstract text available
Text: IRF130 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) VDSS ID(cont) RDS(on) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655)
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IRF130
300ms,
IRF130
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Untitled
Abstract: No abstract text available
Text: IRF130 MECHANICAL DATA Dimensions in mm inches N–CHANNEL POWER MOSFET 39.95 (1.573) max. 30.40 (1.197) 30.15 (1.187) VDSS ID(cont) RDS(on) 4.09 (0.161) 3.84 (0.151) dia. 2 plcs. 11.18 (0.440) 10.67 (0.420) 2 26.67 (1.050) max. 17.15 (0.675) 16.64 (0.655)
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IRF130
300ms,
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MOSFET 8A 900V
Abstract: No abstract text available
Text: SSFP9N90 StarMOST Power MOSFET • Extremely high dv/dt capability ■ Low Gate Charge Qg results in VDSS = 900V Simple Drive Requirement ID25 = 8.0A ■ 100% avalanche tested ■ Gate charge minimized ■ Very low intrinsic capacitances ■ Very good manufacturing repeatability
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SSFP9N90
00A/s
di/dt200A/S
width300S;
MOSFET 8A 900V
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IRFM350
Abstract: No abstract text available
Text: IRFM350 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) VDSS ID(cont) RDS(on) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)
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IRFM350
O-254
254AA
300ms,
IRFM350
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Untitled
Abstract: No abstract text available
Text: IRFM350 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) VDSS ID(cont) RDS(on) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)
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IRFM350
O-254
254AA
300ms,
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KF9N50
Abstract: No abstract text available
Text: SEMICONDUCTOR KF9N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF9N50P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF9N50P/F
KF9N50P
Fig15.
Fig16.
Fig17.
KF9N50
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KF9N25
Abstract: TO-220IS
Text: SEMICONDUCTOR KF9N25P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF9N25P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters
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KF9N25P/F
KF9N25P
Fig15.
Fig16.
Fig17.
KF9N25
TO-220IS
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MOSFET 14A 400V
Abstract: No abstract text available
Text: IRFM350 MECHANICAL DATA Dimensions in mm inches 13.59 (0.535) 13.84 (0.545) N–CHANNEL POWER MOSFET 6.32 (0.249) 6.60 (0.260) VDSS ID(cont) RDS(on) 1.02 (0.040) 1.27 (0.050) 30.35 (1.195) 31.40 (1.235) 16.89 (0.665) 17.40 (0.685) 13.59 (0.535) 13.84 (0.545)
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IRFM350
O-254
254AA
300ms,
IRFM350"
IRFM350
IRFM350-JQR-B
2600pF
190nC
MOSFET 14A 400V
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KF9N50
Abstract: kf9n50p KF9N50F
Text: SEMICONDUCTOR KF9N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KF9N50P This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KF9N50P/F
KF9N50P
above25
dI/dt100A/,
KF9N50
kf9n50p
KF9N50F
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kf9n25
Abstract: KF9N25D
Text: SEMICONDUCTOR KF9N25D TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters
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KF9N25D
Fig13.
Fig14.
Fig15.
kf9n25
KF9N25D
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NTE2993
Abstract: No abstract text available
Text: NTE2993 MOSFET N−Channel, Enhancement Mode High Speed Switch Features: D Repetitive Avalanche Ratings D Dynamic dv/dt Rating D Simple Drive Requirements D Ease of Paralleling Absolute Maximum Ratings: Drain−Source Voltage VGS = 0V, ID = 1mA , VDSS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 400V
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NTE2993
NTE2993
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KHB9D0N50F1
Abstract: KHB9D0N50P1 36 W ballast KHB9D0N50F
Text: SEMICONDUCTOR KHB9D0N50P1/F1/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB9D0N50P1 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB9D0N50P1/F1/F2
KHB9D0N50P1
KHB9D0N50P1
dI/dt200A/,
KHB9D0N50F1
36 W ballast
KHB9D0N50F
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BUZ71
Abstract: BUZ71A TB334 TO 220AB Mosfet TA9770 transistor buz71a
Text: BUZ71A Semiconductor Data Sheet 13A, 50V, 0.120 Ohm, N-Channel Power MOSFET October 1998 File Number 2419.1 Features • 13A, 50V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.120Ω (BUZ71 field effect transistor designed for applications such as
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BUZ71A
BUZ71
TA9770.
BUZ71A
TB334
TO 220AB Mosfet
TA9770
transistor buz71a
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FS18SM14A
Abstract: FS18SM-14A FS18SM tl 464
Text: MITSUBISHI Neh POWER MOSFET ! FS18SM-14A HIGH-SPEED SWITCHING USE FS18SM-14A • VDSS . 700V • rDS ON (MAX) . 0.55Q. • Id . 18A
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FS18SM-14A
FS18SM14A
FS18SM-14A
FS18SM
tl 464
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OCO-32
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET j F S 1 8 S M -9 j J HIGH-SPEED SWITCHING USE FS18SM-9 • VDSS . 450V • rDS ON (MAX) . 0.33Ì2 • I d . 18A
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OCR Scan
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FS18SM-9
OCO-32
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Untitled
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK18SM-10 HIGH-SPEED SWITCHING USE FK18SM-10 OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 3.2 4.4 1.0 5.45 5.45 0.6 If Q w . . 500V ' V ' rDS ON (M A X ). . 0.50Í2
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OCR Scan
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FK18SM-10
150ns
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luo24
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK18SM-10 HIGH-SPEED SWITCHING USE FK18SM-10 O UTLINE DRAWING Dimensions in mm 4.5 r~ ! ! •i 1.5 j . 500V • TDS ON (MAX) .0.50Q.
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OCR Scan
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FK18SM-10
150ns
5710e
luo24
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055II
Abstract: FS18SM14A
Text: MITSUBISHI Neh POWER MOSFET FS18SM-14A HIGH-SPEED SWITCHING USE FS18SM-14A OUTLINE DRAWING Dimensions in mm .4.5. 15.9MAX. 1.5 <t>3.2 uX • r 4.4 1.0 w 5.45 5.45 0.6 f= d J bd^ Q w r V d s s . 700V
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OCR Scan
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FS18SM-14A
055II
FS18SM14A
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5218a
Abstract: No abstract text available
Text: MITSUBISHI Neh POWER MOSFET FK18SM-9 HIGH-SPEED SWITCHING USE FK18SM-9 OUTLINE DRAWING Dimensions in mm .4.5 15.9MAX. 1.5 20.0 4' \ Of k2 0 3.2 W W 4 •’ v ^ h r " ¡[K s in - , 1 0.6 j 5.45 , _ . 4 . SAS jiJ_.'l fm . I M'i ■i. G AT E 2 D R A IN
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OCR Scan
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FK18SM-9
150ns
5218a
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Untitled
Abstract: No abstract text available
Text: HARRIS SEIUCOND SECTOR m SfiE D HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM130 D, R, H • 43D2271 GD4Sh72 13T H H A S 2N7271U, 2N7271H 2N7271H . Radiation Hardened N-Channel Power MOSFETs December 1992 Features • 14A, 100V, RDS<on)» 0.180Q
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OCR Scan
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FRM130
2N7271U,
2N7271H
2N7271H
43D2271
GD4Sh72
100KRAD
300KRAD
1000KRAD
3000KRAD
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30ym
Abstract: No abstract text available
Text: m HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRM130 D, R, H 2N7271D, 2N7271R 2N7271H Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 14A, 100V, RDS<on) - 0.180Q TQ-204AA • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
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FRM130
2N7271D,
2N7271R
2N7271H
TQ-204AA
300KRAD
3000KRAD
35MeV/mg/cm*
631UIS
FMI30PH0
30ym
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12v transformer
Abstract: No abstract text available
Text: SI H A R R IS S E M I C O N D U C T O R FRM130D, FRM130R, FRM130H 14A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Package Features TO-204AA • 14A, 100V, RDS on = 0.180Q • Second Generation Rad Hard MOSFET Results From New Design Concepts
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OCR Scan
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FRM130D,
FRM130R,
FRM130H
O-204AA
100KRAD
300KRAD
1000KRAD
3000KRAD
AN-8831,
12v transformer
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