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    N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Search Results

    N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation
    TK090U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 30 A, 0.09 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MTC3585G6

    Abstract: MTC3585
    Text: Spec. No. : C416G6 Issued Date : 2007.07.13 Revised Date :2009.03.16 Page No. : 1/8 CYStech Electronics Corp. N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC3585G6 Description The MTC3585G6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single


    Original     		PDF C416G6 MTC3585G6 MTC3585G6 UL94V-0 MTC3585

    single P-Channel mosfet sot-26

    Abstract: VGS-12V N-Channel mosfet sot-26
    Text: Spec. No. : C416N6 Issued Date : 2007.07.12 Revised Date : Page No. : 1/8 CYStech Electronics Corp. N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC3585N6 Description The MTC3585N6 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single


    Original     		PDF C416N6 MTC3585N6 MTC3585N6 OT-26 OT-26 MTC358ny UL94V-0 single P-Channel mosfet sot-26 VGS-12V N-Channel mosfet sot-26

    2SK1672

    Abstract: 2SK1533 2sk2280 2SK228
    Text: N & P CHANNEL POWER MOSFETS N AND P CHANNEL ENHANCEMENT MODE • UP TO 900V AT 1.0 AMP WITH 2KV DIELECTRIC STRENGTH • LOW INPUT CAPACITANCE, LOW RDS ON AND FAST SWITCHING TIMES N CHANNEL ENHANCEMENT MODE TC = 25˚C The latest comprehensive data to fully


    Original     		PDF 2SK1194 2SK1195 2SK1533 2SK1672 2SK1861 2SK1931 2SK2177 2SK2178 2SK2179 2SK2279 2sk2280 2SK228

    5806SS

    Abstract: DIODE vsd N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 5806-S
    Text: CYStech Electronics Corp. Spec. No. : C407Q8 Issued Date : 2008.12.02 Revised Date : Page No. : 1/9 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC5806Q8 Description The MTC5806Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8


    Original     		PDF C407Q8 MTC5806Q8 MTC5806Q8 UL94V-0 5806SS DIODE vsd N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 5806-S

    4503ss

    Abstract: 24v 6A mosfet MTC4503Q8 4503ss equivalent 24V 1A mosfet 4503s
    Text: CYStech Electronics Corp. Spec. No. : C384Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 1/8 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4503Q8 Description The MTC4503Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8


    Original     		PDF C384Q8 MTC4503Q8 MTC4503Q8 UL94V-0 4503ss 24v 6A mosfet 4503ss equivalent 24V 1A mosfet 4503s

    4501ss

    Abstract: MTC4501Q8 C385Q8 CYStech Electronics N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 4501s
    Text: CYStech Electronics Corp. Spec. No. : C385Q8 Issued Date : 2007.06.13 Revised Date : Page No. : 1/10 N- AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET MTC4501Q8 Description The MTC4501Q8 consists of a N-channel and a P-channel enhancement-mode MOSFET in a single SOP-8


    Original     		PDF C385Q8 MTC4501Q8 MTC4501Q8 UL94V-0 4501ss C385Q8 CYStech Electronics N AND P-CHANNEL ENHANCEMENT MODE POWER MOSFET 4501s

    SI4532DY

    Abstract: F852 transistor CBVK741B019 F011 F63TNR F852 FDS9953A L86Z
    Text: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF Si4532DY -30Voduct F852 transistor CBVK741B019 F011 F63TNR F852 FDS9953A L86Z

    NDH8320C

    Abstract: No abstract text available
    Text: N December 1996 NDH8320C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		PDF NDH8320C NDH8320C

    Untitled

    Abstract: No abstract text available
    Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very


    Original     		PDF Si4532DY

    Untitled

    Abstract: No abstract text available
    Text: Si4532DY Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very


    Original     		PDF Si4532DY

    D665

    Abstract: SI4532DY w992
    Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very


    Original     		PDF Si4532DY D665 w992

    Untitled

    Abstract: No abstract text available
    Text: Si4532DY* Dual N- and P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild's propretary, high cell density, DMOS technology. This very


    Original     		PDF Si4532DY

    N P CHANNEL dual POWER MOSFET

    Abstract: NDH8320C
    Text: N September 1996 PRELIMINARY NDH8320C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		PDF NDH8320C NDH8320C N P CHANNEL dual POWER MOSFET

    NDH8520C

    Abstract: No abstract text available
    Text: N September 1996 PRELIMINARY NDH8520C Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    Original     		PDF NDH8520C NDH8520C

    Untitled

    Abstract: No abstract text available
    Text: Si4539DY Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF Si4539DY

    NDS9943

    Abstract: No abstract text available
    Text: N February 1996 NDS9943 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology. This very


    Original     		PDF NDS9943 NDS9943

    Untitled

    Abstract: No abstract text available
    Text: February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDS9952A

    NDS9952A

    Abstract: No abstract text available
    Text: February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDS9952A NDS9952A

    NDS9952A

    Abstract: No abstract text available
    Text: February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDS9952A NDS9952A

    F011

    Abstract: F63TNR F852 L86Z NDS9952A
    Text: February 1996 NDS9952A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This


    Original     		PDF NDS9952A F011 F63TNR F852 L86Z NDS9952A

    8928a

    Abstract: FDS8928A SOIC-16 1130 pch
    Text: July 1998 FDS8928A Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P -Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very


    Original     		PDF FDS8928A 8928a FDS8928A SOIC-16 1130 pch

    Untitled

    Abstract: No abstract text available
    Text: May 1996 national Semiconductor~ NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode • N-Channel 3.5A, 20V, RDS 0N| = 0.10 @ VGS = 10V. power field effect transistors are produced using


    OCR Scan     		PDF NDS9958

    4-221

    Abstract: transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET
    Text: National Semiconductor" May 1996 NDS9958 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS9958 b501130 0Q400bl 4-221 transistor mosfet n-ch drain current NDS9958 Dual N & P-Channel MOSFET

    nds9942

    Abstract: No abstract text available
    Text: National & Semiconductor" May 1996 NDS9942 Dual N & P-Channel Enhancement Mode Field Effect Transistor General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS


    OCR Scan     		PDF NDS9942 nds9942