Untitled
Abstract: No abstract text available
Text: STL40C30H3LL N-channel 30 V, 0.019 Ω typ., 40 A, P-channel 30 V, 0.028 Ω typ., 30 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet — preliminary data Features Type VDSS STL40C30H3LL N-channel STL40C30H3LL (P-channel) RDS(on) max
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STL40C30H3LL
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Untitled
Abstract: No abstract text available
Text: STL35N6F3 N-channel 60 V, 0.019 Ω, 10 A STripFET III Power MOSFET in PowerFLAT™ 5x6 package Datasheet — production data Features Order code VDSS RDS on max ID STL35N6F3 60 V < 0.022 Ω 10 A • N-channel enhancement mode ■ 100% avalanched rated
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STL35N6F3
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Untitled
Abstract: No abstract text available
Text: STL35N6F3 N-channel 60 V, 0.019 Ω, 10 A STripFET III Power MOSFET in PowerFLAT™ 5x6 package Datasheet — production data Features Order code VDSS RDS on max ID STL35N6F3 60 V < 0.022 Ω 10 A • N-channel enhancement mode ■ 100% avalanched rated
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STL35N6F3
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M25P16 VDFPN8
Abstract: M25P16 A21 SO8 MARKING CODE A21 SO8 Numonyx AN1995
Text: M25P16 16 Mbit, serial Flash memory, 75 MHz SPI bus interface Features n 16 Mbit of Flash memory n Page Program up to 256 bytes in 0.64 ms (typical) n Sector Erase (512 Kbit) in 0.6 s (typical) n Bulk Erase (16 Mbit) in 13 s (typical) n 2.7 V to 3.6 V single supply voltage
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M25P16
2015h)
M25P16 VDFPN8
M25P16
A21 SO8
MARKING CODE A21 SO8
Numonyx AN1995
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Untitled
Abstract: No abstract text available
Text: STL25N15F4 N-channel 150 V, 0.057 Ω, 6 A, PowerFLAT 5x6 STripFET™ DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STL25N15F4 150 V < 0.063 Ω 6A • N-channel enhancement mode ■ 100% avalanched rated ■ Low gate charge ■ Very low on-resistance
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STL25N15F4
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pch 1275
Abstract: PowerFLAT
Text: STL40C30H3LL N-channel 30 V, 0.019 Ω typ., 40 A, P-channel 30 V, 0.024 Ω typ., 30 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet — preliminary data Features Order code STL40C30H3LL N-channel STL40C30H3LL (P-channel) VDS RDS(on) max
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STL40C30H3LL
pch 1275
PowerFLAT
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STL25N15F4
Abstract: No abstract text available
Text: STL25N15F4 N-channel 150 V, 0.057 Ω, 6 A, PowerFLAT 5x6 STripFET™ DeepGATE™ Power MOSFET Features Type VDSS RDS(on) max ID STL25N15F4 150 V < 0.063 Ω 6A • N-channel enhancement mode ■ 100% avalanched rated ■ Low gate charge ■ Very low on-resistance
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STL25N15F4
25N15y
STL25N15F4
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Untitled
Abstract: No abstract text available
Text: STL35N6F3 N-channel 60 V, 0.018 Ω, 10 A, PowerFLAT 5x6 STripFET™ III Power MOSFET Features Type VDSS RDS on max ID STL35N6F3 60 V < 0.022 Ω 10 A • N-channel enhancement mode ■ 100% avalanched rated ■ Low gate charge ■ Very low on-resistance
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STL35N6F3
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STL35N6F3
Abstract: TF410
Text: STL35N6F3 N-channel 60 V, 0.018 Ω, 6 A, PowerFLAT 5x6 STripFET™ III Power MOSFET Preliminary data Features Type VDSS RDS(on) max ID STL35N6F3 60 V < 0.022 Ω 10 A • N-channel enhancement mode ■ 100% avalanched rated ■ Low gate charge ■ Very low on-resistance
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STL35N6F3
35N6F3
STL35N6F3
TF410
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Untitled
Abstract: No abstract text available
Text: STL40C30H3LL N-channel 30 V, 0.019 Ω typ., 10 A, P-channel 30 V, 0.024 Ω typ.,8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Datasheet - production data Features Order code VDS STL40C30H3LL N-channel RDS(on) max ID 0.021 Ω @ 10 V 10 A
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STL40C30H3LL
DocID023874
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Untitled
Abstract: No abstract text available
Text: STL40DN3LLH5 Dual N-channel 30 V, 0.016 Ω, 11 A PowerFLAT 5x6 double island, STripFET™ V Power MOSFET Preliminary data Features Type VDSS RDSo(n) ID STL40DN3LLH5 30 V < 0.018 Ω 11 A (1) 1. The value is rated according Rthj-pcb • RDS(on) * Qg industry benchmark
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STL40DN3LLH5
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Untitled
Abstract: No abstract text available
Text: STL20DN10F7 Dual N-channel 100 V, 0.059 Ω typ., 5 A STripFET VII DeepGATE™ Power MOSFET in a PowerFLAT™ 5x6 double island package Datasheet - production data Features 1 Order code VDS RDS on max ID STL20DN10F7 100 V 0.067 Ω 5A 4 1 8 • N-channel enhancement mode
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STL20DN10F7
DocID023935
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Untitled
Abstract: No abstract text available
Text: STL40N75LF3 N-channel 75 V, 16 mΩ typ., 10 A STripFET III Power MOSFET in a PowerFLAT™ 5x6 package Datasheet - production data Features 1 Order code VDSS RDS on max. ID STL40N75LF3 75 V 19 mΩ 10 A 2 3 4 • N-channel enhancement mode • Low gate charge
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STL40N75LF3
DocID023810
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4N65L-TA3-T
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N65-N Power MOSFET 4A, 650V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N65-N is a high voltage power MOSFET designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance
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4N65-N
4N65-N
QW-R502-965
4N65L-TA3-T
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Untitled
Abstract: No abstract text available
Text: UNISONIC TECHNOLOGIES CO., LTD 4N60-N Power MOSFET 4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 4N60-N is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high
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4N60-N
4N60-N
QW-R502-971
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Untitled
Abstract: No abstract text available
Text: USER GUIDE | UG:100 PF175 AC-DC Converter Evaluation Board with External Input Filter January 2013 Contents Page Set Up 2 Recommended 4 Hardware Features n Oscilloscope probe jack for output voltage and ripple measurements n Simple to use n Ring lug, screw terminal, and solder connection options
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PF175
bee5017
100mA
TCLT-1009
TMOV20RP300EL2T7-ND
TMOV20RP300E
F3551TR-ND
V300SM7
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Untitled
Abstract: No abstract text available
Text: FDPC8014S PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 3.8 mΩ at VGS = 10 V, ID = 20 A dual package. The switch node has been internally connected to
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FDPC8014S
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Untitled
Abstract: No abstract text available
Text: FDPC8014S PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 3.8 mΩ at VGS = 10 V, ID = 20 A dual package. The switch node has been internally connected to
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FDPC8014S
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Untitled
Abstract: No abstract text available
Text: FDPC8016S PowerTrench Power Clip 25V Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 3.8 mΩ at VGS = 10 V, ID = 20 A dual package. The switch node has been internally connected to
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FDPC8016S
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36F36
Abstract: MIL-DTL-83527 AC-8010122-001 12F5C2 NF24Q100 EN3682 NF24Q100 Tensolite 20F12T8 amphenol arinc 404 MIL 83527
Text: C O N N E C T I N G S YS T E M S OF THE FUTURE R27 R27 Series MIL-DTL-83527 Filtered and Rectangular Products The Amphenol R27 Series is a robust rectangular connector designed to meet or surpass all the requirements of the MIL-DTL-83527 specification and
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MIL-DTL-83527
M83733
JN1122)
36F36
AC-8010122-001
12F5C2
NF24Q100
EN3682
NF24Q100 Tensolite
20F12T8
amphenol arinc 404
MIL 83527
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LED display 12 lines, 40 characters each, 10x8
Abstract: led matrix 8x8 mini circuits KIT320F-8 transistor c1015 256x240 0FP320F-8SW 4xm4 transistor KIT320F-8LW KIT320F-8LWTP HD44780
Text: COLOR EA KIT320F-8 10.2010 5.7" COLOR LCD- CONTROL PANEL INCL. TOUCH PANEL n ectio n n o c y with x t d i s p l a te 4780 4 D H for EA KIT320F-8LWTP Outline dim. 155 x 115mm FEATURES * 5.7" COLOR LCD GRAPHIC DISPLAY WITH MANY GRAPHICS FUNCTIONS AND FONTS
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KIT320F-8
KIT320F-8LWTP
115mm
320x240
320mAOR
RS-232
RS-422WITH
KIT320F-8
0FP320F-8SW
KIT320-8CTP)
LED display 12 lines, 40 characters each, 10x8
led matrix 8x8 mini circuits
transistor c1015
256x240
0FP320F-8SW
4xm4 transistor
KIT320F-8LW
KIT320F-8LWTP
HD44780
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4x20 lcd hd44780
Abstract: HD44780 KIT320F-8 KIT320F-8C KIT320F-8CTP K320COMP G16 CMD transistor c1015 256x240
Text: COLOR EA KIT320F-8 Feb. 6th. 2004 5,7" COLOR LCD- CONTROL PANEL INCL. TOUCH PANEL n ectio n n o c y with x t d i s p l a te 4780 4 D H for EA KIT320F-8CTP Outline dim. 155 x 115mm FEATURES * 5,7" COLOR LCD GRAPHIC DISPLAY WITH MANY GRAPHICS FUNCTIONS AND FONTS
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KIT320F-8
KIT320F-8CTP
115mm
320x240
850mAOR
RS-232
RS-422WITH
512kBFLASH
GRT320F-8
320x240x3RGB
4x20 lcd hd44780
HD44780
KIT320F-8
KIT320F-8C
KIT320F-8CTP
K320COMP
G16 CMD
transistor c1015
256x240
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Untitled
Abstract: No abstract text available
Text: STL52N25M5 N-channel 250 V, 0.064 Q 28 A, PowerFLAT 5x6 MDmesh™ V Power MOSFET Features Type V DSS RDS(on) max. Id (1) STL52N25M5 250 V < 0.076 Q 28 A 1. This value is rated according Rthj.case. • A m ongst the best R ps^n )* area ■ V ery low profile package (1 mm max.)
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STL52N25M5
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63477-2
Abstract: No abstract text available
Text: 2 4 T H IS D R A W IN G IS U N P U B L IS H E D . C O P Y R IG H T BY ^ C O RELEASED E L E C T R O N IC S FO R ALL C O R P O R A T IO N . P U B L IC A T IO N R IG H T S - - R E V IS IO N S 50 RESERVED. LTR F 4 D 5 .6 1 •[.22 1] 3.68 — [.1 45] 1 .83
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ECR-09-006448
25MAR09
5X63477-5
31MAR2000
63477-2
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