STT251
Abstract: TT251N TT 251 N 14
Text: European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information TT 251 N 28,5 35 5 6 115 80 9 18 M8 18 92 AK K A K1 G1 K2 G2 VWK February 1996 TT 251 N, TD 251 N, DT 251 N Elektrische Eigenschaften Höchstzulässige Werte Electrical properties
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETS CJD02N60 N-Channel Power MOSFET TO-251 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-251
CJD02N60
O-251
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETS CJD01N60 N-Channel Power MOSFET TO-251 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-251
CJD01N60
O-251
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Untitled
Abstract: No abstract text available
Text: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251 Plastic-Encapsulate MOSFETS CJD01N60 N-Channel Power MOSFET TO-251 General Description The high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage-blocking capability without degrading
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O-251
CJD01N60
O-251
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PJP1N80
Abstract: No abstract text available
Text: PJP1N80 / PJU1N80 TO-220AB/TO-251 800V N-Channel Enhancement Mode MOSFET FEATURES TO-220AB • 1A, 800V, RDS ON =16Ω@VGS=10V, ID=0.5A • • • • • TO-251 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP1N80
PJU1N80
O-220AB/TO-251
O-220AB
IEC61249
2002/95/EC
O-220AB
O-251
MIL-STD-750
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D2N60
Abstract: U2N60
Text: PJD2N60 / PJU2N60 TO-252 / TO-251 600V N-Channel Enhancement Mode MOSFET FEATURES • 2A, 600V, RDS ON =4.6Ω@VGS=10V, ID=1.0A • • • • • • TO-251 TO-252 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJD2N60
PJU2N60
2002/95/EC
O-252
O-251
O-252
O-251
MIL-STD-750
D2N60
U2N60
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P1N80
Abstract: U1N80 ELER
Text: PJP1N80 / PJU1N80 TO-220AB/TO-251 800V N-Channel Enhancement Mode MOSFET FEATURES TO-220AB • 1A, 800V, RDS ON =16Ω@VGS=10V, ID=0.5A • • • • • • TO-251 Low ON Resistance Fast Switching Low Gate Charge Fully Characterized Avalanche Voltage and Current
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PJP1N80
PJU1N80
O-220AB/TO-251
O-220AB
O-251
2002/95/EC
O-220AB
O-251
MIL-STD-750
PJP1N80
P1N80
U1N80
ELER
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Untitled
Abstract: No abstract text available
Text: QSFCT151T, 251T, 2152T, 2251T U i„W C r u n e QS54/74FCT151T High-Speed CMOS Q qss4 /7 4 fc t 2 5 it 8 inpi Input lexers Multiple QS54/74FCT2151T Q S54/74FCT2251T FEATURES/BENEFITS • Pin and function compatible to the 74F151/251 74FCT151/251 and 74FCT151T/251T
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OCR Scan
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QSFCT151T,
2152T,
2251T
QS54/74FCT151T
QS54/74FCT2151T
S54/74FCT2251T
74F151/251
74FCT151/251
74FCT151T/251T
MIL-STD-883
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Untitled
Abstract: No abstract text available
Text: IL250/251/252 ILD250/251/252 SINGLE CHANNEL DUAL CHANNEL Bidirectional Input Optocoupler FEA T U R E S • S e le c te d C u rre n t T ra n s fe r R a tio s 20% , 50% , 100% M in im u m Dimensions in inches mm Single Channel • A C o r P o la rity In s e n s itiv e In p u t
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IL250/251/252
ILD250/251/252
1-888-lnfineon
IL/D250/251/252
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54ALS251
Abstract: 74AS251
Text: TYPES SN 54A LS251, S N 54A S 251, SN 74A LS 251, SN74A S251 1 OF 8 DATA SELECTORS/MULTIPLEXERS W ITH 3 STATE OUTPUTS D 2661, APRIL 1982-REVISED DECEMBER 1983 • Three-State Versions of 'A L S 15 1 and 'A S 1 5 1 • Three-State Outputs Interface Directly w ith System
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LS251,
SN74A
1982-REVISED
13voltage
54AS251
SN74AS251
54ALS251
74AS251
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PLC router
Abstract: 508TX 7014 troubleshooting RS232 communication port 508-TX-A 509FX-A
Text: N-TRON Corp. 820 S. University Blvd. Suite 4E Mobile, Al. 36609 Phone: 251-342-2164 Fax: 251-342-6353 Monitoring and Control of Multiple EtherNet/IP Control Groups EtherNet/IP networks for I/O, Drive, and other control components are being used in an increasing number of process control installations worldwide. This technology allows devices
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D1677
Abstract: 2SK3794 2SK3794-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3794 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3794 is N-channel MOS Field Effect Transistor designed for high current switching applications. PART NUMBER PACKAGE 2SK3794 TO-251 2SK3794-Z
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2SK3794
2SK3794
O-251
2SK3794-Z
O-252
O-251)
O-251/TO-252
O-252)
D1677
2SK3794-Z
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2SK3484
Abstract: 2SK3484-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3484 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3484 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3484 TO-251 2SK3484-Z TO-252 designed for high current switching applications.
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2SK3484
2SK3484
O-251
2SK3484-Z
O-252
O-251/TO-252
O-251)
2SK3484-Z
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2SK3716
Abstract: 2SK3716-Z D1653
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3716 SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION ORDERING INFORMATION The 2SK3716 is N-channel MOS Field Effect Transistor PART NUMBER designed for high current switching applications. 2SK3716 2SK3716-Z PACKAGE TO-251 MP-3
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2SK3716
2SK3716
2SK3716-Z
O-251
O-252
O-251)
2SK3716-Z
D1653
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2SK3716
Abstract: 2SK3716-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3716 SWITCHING N-CHANNEL POWER MOS FET ORDERING INFORMATION DESCRIPTION The 2SK3716 is N-channel MOS Field Effect Transistor PART NUMBER 2SK3716 designed for high current switching applications. 2SK3716-Z PACKAGE TO-251 MP-3
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2SK3716
2SK3716
2SK3716-Z
O-251
O-252
O-251)
60ems,
2SK3716-Z
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1ld2
Abstract: e527 IL0251
Text: SIEMENS CriPNTSi OPTO SIEM EN S 44E D m 023b35b 000501=1 7 Q S I E X IL250/251/252 ILD250/251/252 SINGLE CHANNEL DUAL CHANNEL BIDIRECTIONAL INPUT OPTOCOUPLERS FEATURES • A C o r Po la rity In s e n sitiv e In p u ts • S e le c te d C u rren t T r a n s fe r R a tio s
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023b35b
IL250/251/252
ILD250/251/252
IL/ILD250/251/252
25ilA
20ttA
IUILD2S0/251/252
1ld2
e527
IL0251
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3225 TO-251 2SK3225-Z TO-252 designed for high current switching applications.
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2SK3225
2SK3225
2SK3225-Z
O-251
O-252
O-251/TO-252
O-251)
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d1379
Abstract: 2SK3225 2SK3225-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3225 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3225 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3225 TO-251 2SK3225-Z TO-252 designed for high current switching applications.
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2SK3225
2SK3225
O-251
2SK3225-Z
O-252
O-251/TO-252
O-251)
d1379
2SK3225-Z
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2SK3483-Z
Abstract: 2SK3483 D1506
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3483 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3483 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3483 TO-251 2SK3483-Z TO-252 designed for high current switching applications.
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2SK3483
2SK3483
O-251
2SK3483-Z
O-252
O-251/TO-252
O-251)
2SK3483-Z
D1506
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D144
Abstract: 2SK3386 2SK3386-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3386 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3386 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3386 TO-251 2SK3386-Z TO-252 designed for high current switching applications.
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2SK3386
2SK3386
O-251
2SK3386-Z
O-252
O-251/TO-252
O-251)
120ce
D144
2SK3386-Z
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2SK3402
Abstract: 2SK3402-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3402 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3402 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3402 TO-251 2SK3402-Z TO-252 designed for high current switching applications.
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2SK3402
2SK3402
O-251
2SK3402-Z
O-252
O-251/TO-252
O-251)
2SK3402-Z
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2SK3224
Abstract: 2SK3224-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3224 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3224 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3224 TO-251 2SK3224-Z TO-252 designed for high current switching applications.
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2SK3224
2SK3224
O-251
2SK3224-Z
O-252
O-251/TO-252
O-251)
O-252)
2SK3224-Z
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2SK3385-Z
Abstract: 2SK3385
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3385 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3385 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3385 TO-251 2SK3385-Z TO-252 designed for high current switching applications.
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2SK3385
2SK3385
O-251
2SK3385-Z
O-252
O-251/TO-252
O-251)
2SK3385-Z
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D1432
Abstract: M2SK3377 2SK3377 2SK3377-Z
Text: DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3377 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE ORDERING INFORMATION DESCRIPTION The 2SK3377 is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE 2SK3377 TO-251 2SK3377-Z TO-252 designed for high current switching applications.
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2SK3377
2SK3377
O-251
2SK3377-Z
O-252
O-251/TO-252
O-251)
D1432
M2SK3377
2SK3377-Z
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