MWT4LN Search Results

Microwave power GaAs FET data

Contextual Info: MwT-0618S-4N2/0618Z-4N2 6.0-18.0 GHz Balanced Amplifier Module www.mwtinc.com Email: info@mwtinc.com TYPICAL SPECIFICATIONS AT 25 C 14.0 dBm P-1dB 8.0 dB SMALL SIGNAL GAIN 15.0 dB INPUT/OUTPUT RETURN LOSS 40 mA @ +8V USES TWO MwT-4LN GaAs FET DEVICES Typical Noise Figure

L1241

Abstract: MwT-470 MWT4LN MA1866
Contextual Info: gàsrÆ MwT-4 26 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y Untt* In |im - l - l • 1.5dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 180 MICRON GATE WIDTH • CHOICE OF CHIP AND TWO PACKAGE TYPES

Contextual Info: MwT-0618S-4N2/0618Z-4N2 6.0-18.0 GHz BALANCED AM PLIFIER MODULE MICROWAVE TECHNOLOGY 4268 SolarWay Fremont, CA 94538 510-651-6700 FAX510-651 -2208 TYPICAL SP EC IFIC A TIO N S @ 25°C 1 U JL w • • • • • • 8.0 dB SMALL SIGNAL GAIN 4.0 dB NOISE FIGURE

Contextual Info: MwT-0618S-4N2/0618Z-4N2 6.0-18.0 GHz Balanced Amplifier Module www.mwtinc.com Email: info@mwtinc.com TYPICAL SPECIFICATIONS AT 25 C 14.0 dBm P-1dB 8.0 dB SMALL SIGNAL GAIN 15.0 dB INPUT/OUTPUT RETURN LOSS 40 mA @ +8V USES TWO MwT-4LN GaAs FET DEVICES Typical Noise Figure

Contextual Info: MwT-0618S-4N2/0618Z-4N2 U&kti 6 .0 -1 8 .0 G H z BALANCED AMPLIFIER MODULE MICROWAVE TEC H N O LO G Y 4 2 6 8 SolarWay Fremont, CA 9 45 38 5 1 0 -6 51 -6 7 00 F A X 5 1 0-651 -2208 TYPICAL SPECIFICATIONS @ 25°C • • • • • • iy i in r 8.0 dB SMALL SIGNAL GAIN

tl241

Contextual Info: rilCROIilAVE T E C H N O L O G Y bbE ]> • t.l 241 D 0 0000E4A 544 ■MRIilV MwT - 4 m 26 GHz Low Noise GaAs FET m Microwave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX510-651-2208 FEATURES — Isot— • 1.5 dB NOISE FIGURE AT 12 GHZ 3

Contextual Info: MWT-0618S-4N2/0618Z-4N2 u - w n a tm w w w .m w tin c .c o m w in iw i E m a il ; info@ m w tin c ,com TYPICA L SPECIFICATIONS AT 25 °C • 14.0 dBm P-ldB ;l| • 8.0 dB SMALL SIGNAL GAIN • 15.0 dB INPUT/OUTPUT RETURN LOSS or ' I • • 4 0 m A <§> + 8 V

MwT-471

Abstract: FET 5457 MwT-470
Contextual Info: MwT-4 26 GHz Low Noise GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns CHIP THICKNESS = 125 FEATURES 50 • 1.5 dB NOISE FIGURE AT 12 GHz • HIGH ASSOCIATED GAIN • 0.3 MICRON REFRACTORY METAL/GOLD GATE • 180 MICRON GATE WIDTH

IGD 507 an

Abstract: MWT-470LN F42 equivalent
Contextual Info: MwT - 4 26 GHz Low Noise GaAs FET MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 F A X 510-651-2208 FEATURES • 1.5 dB NOISE FIGURE AT 12 GHZ • HIGH ASSOCIATED GAIN •0.3 MICRON REFRACTORY METAL/GOLD GATE • 180 MICRON GATE WIDTH • CHOICE OF CHIP AND TWO PACKAGE TYPES

Contextual Info: -r-3 h Z 5 MwT-4 GN/SN/LN 26 GHz LOW NOISE GaAs FET DEVICE MICROWAVE T e c h n o l o g y niCROQIAVE 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 TECHNOLOGY 4ÛE D • LIE M ID D T5Q ■ 3 — • • • • • • • • « 84 |— —!5 o |- 3 5 6 -CHIP THICKNESS = 185 MICRONS

Contextual Info: MwT-4 26 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y Unitsinixm -► j 50 I * - 1.5dB NOISE FIGURE AT 12 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAUGOLD GATE 180 MICRON GATE WIDTH CHOICE OF CHIP AND TWO PACKAGE TYPES \+m *\ 50 k 356

si5413

Abstract: 5-101 rn 308
Contextual Info: MwT-4 26 GHz Low Noise GaAs FET M ic r o w a v e T e c h n o l o g y -►j 50 |*- Units In|im ,i Q iu m • • • • • 1.5dB NOISE FIGURE AT 12 GHZ HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METALVGOLD GATE 180 MICRON GATE WIDTH CHOICE OF CHIP AND TWO