MWT-7 MICROWAVE Search Results

Contextual Info: MwT - 1719S-2P1 /MwT-1719Z-2P1 1 7 .7 -1 9 .7 GHz BALANCED AMPLIFIER MODULE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 TYPICAL SPECIFICATIONS @ 25°C • +25 dBm P-1dB * 5 dB SMALL SIGNAL GAIN • 15 dB INPUT/OUTPUT RETURN LOSS

Contextual Info: . Mm MwT -1 7 1 9S-12P1 /MwT-1719Z-12P1 1=1 1 7 .7 - 1 9 . 7 G H z BALANCED AMPLIFIER MODULE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 TYPICAL SPECIFICATIONS @ 25°C • +27.5 dBm P-1dB * 4 dB SMALL SIGNAL GAIN 15 dB INPUT/OUTPUT RETURN LOSS

Contextual Info: MwT -1 7 1 9S-5G1 /MwT-1719Z-5G1 1 7 .7 -1 9 .7 GHz BALANCED AMPLIFIER MODULE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 TYPICAL SPECIFICATIONS @ 25°C fi 11 = , J It i • +15 dBm P-1dB * 10dB SMALL SIGNAL GAIN * 6 dB NOISE FIGURE

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Contextual Info: MwT - 1719S-12P1 /MwT-1719Z-12P1 1 7 .7 -1 9 .7 GHz BALANCED AMPLIFIER MODULE MICROWAVE TECHNOLOGY 4268 Solar way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 TYPICAL SPECIFICATIONS @ 25°C • +27.5 dBm P-1dB • 4 dB SMALL SIGNAL GAIN 15 dB INPUT/OUTPUT RETURN LOSS

Contextual Info: S MwT - 1719S-3P1 /MwT-1719Z-3P1 1 7 .7 -1 9 .7 GHz BALANCED AMPLIFIER MODULE Ù Z MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 TYPICAL SPECIFICATIONS @ 25°C • +21 dBm P-1dB • 6 dB SMALL SIGNAL GAIN 15 dB INPUT/OUTPUT RETURN LOSS

Contextual Info: f~ f= i m MwT -1719S-3P1 /MwT-1719Z-3P1 1 7 .7 -1 9 .7 GHz BALANCED AMPLIFIER MODULE k fi ^ MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 TYPICAL SPECIFICATIONS @ 25°C • +21 dBm P-1dB * 6 dB SMALL SIGNAL GAIN • 15 dB INPUT/OUTPUT RETURN LOSS

1 AGMF

Abstract: GECJ
Contextual Info: MwT -1719S-2P1 /MwT-1719Z-2P1 1 7 .7 -19.7 GHz BALANCED AMPLIFIER MODULE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 TYPICAL SPECIFICATIONS @ 25°C • +25 dBm P-1dB • 5 dB SMALL SIGNAL GAIN 15 dB INPUT/OUTPUT RETURN LOSS

Contextual Info: MwT - 1719S-5G1/MwT-1719Z-5G1 1 7 .7 -19.7 GHz BALANCED AMPLIFIER MODULE MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 TYPICAL SPECIFICATIONS @ 25°C fi fi =¥1 i JW • +15 dBm P-1dB • 10 dB SMALL SIGNAL GAIN • 6 dB NOISE FIGURE

MWT-7

Contextual Info: MwT-0218S-7P1/0218Z-7P1 Distributed Amplifier Module 2.0 - 18.0 Ghz Features ! ! ! ! 21 dBm P1dB 8.0 dB Small Signal Gain 10.0 dB Input/Output Return Loss Uses four MwT-7 FET devices 9.0 8.0 7.0 2 6 10 14 18 Typical P1dB dBm Typical Small Signal Gain (dB)

Contextual Info: MwT-0206S-7G1/0206Z-7G1 2.0-6.0 GHz Balanced Amplifier Module Email: info@mwtinc.com www.mwtinc.com TYPICAL SPECIFICATIONS AT 25 C 15.0 dBm P-1dB 10.0 dB SMALL SIGNAL GAIN 14.0 dB INPUT/OUTPUT RETURN LOSS 60 mA @ +8V USES TWO MwT-7 GaAs FET DEVICES Typical Input/Output

Contextual Info: MwT-0206S-7G2/0206Z-7G2 2.0-6.0 GHz Balanced Amplifier Module Email: info@mwtinc.com www.mwtinc.com TYPICAL SPECIFICATIONS AT 25 C 15.0 dBm P-1dB 11.0 dB SMALL SIGNAL GAIN 14.0 dB INPUT/OUTPUT RETURN LOSS 60 mA @ +8V USES TWO MwT-7 GaAs FET DEVICES Typical Input/Output

Contextual Info: MwT-0618S-7G2/0618Z-7G2 6.0-18.0 GHz Balanced Amplifier Module www.mwtinc.com Email: info@mwtinc.com TYPICAL SPECIFICATIONS AT 25 C 15.0 dBm P-1dB 7.5 dB SMALL SIGNAL GAIN 15.0 dB INPUT/OUTPUT RETURN LOSS 60 mA @ +8V USES TWO MwT-7 GaAs FET DEVICES Typical Input/Output

modules

Abstract: socket head cap screw Microwave power GaAs FET data
Contextual Info: MwT-0206S-7G2/0206Z-7G2 2.0-6.0 GHz Balanced Amplifier Module Email: info@mwtinc.com www.mwtinc.com TYPICAL SPECIFICATIONS AT 25 C 15.0 dBm P-1dB 11.0 dB SMALL SIGNAL GAIN 14.0 dB INPUT/OUTPUT RETURN LOSS 60 mA @ +8V USES TWO MwT-7 GaAs FET DEVICES Typical Input/Output

Contextual Info: MwT-0618S-7G1/0618Z-7G1 6.0-18.0 GHz Balanced Amplifier Module www.mwtinc.com Email: info@mwtinc.com TYPICAL SPECIFICATIONS AT 25 C 15.0 dBm P-1dB 7.0 dB SMALL SIGNAL GAIN 15.0 dB INPUT/OUTPUT RETURN LOSS 60 mA @ +8V USES TWO MwT-7 GaAs FET DEVICES Typical Input/Output

Contextual Info: MWT-0618S-7G2/0618Z-7G2 u -w n a tm w in iw i E m a il : info@m w tin c ,com w w w .m w tin c .c o m TYPICA L SPECIFICATIONS AT 25 eC • 15.0 dBm P-ldB • 7.5 IB SMALL SIGNAL GAIN • 15.0 (IB INPUT/OUTPUT RETURN LOSS • 60 mÀ <§> +8V • USES TWO MwT-7 GaAs FET DEVICES

Application Notes

Abstract: MWT-7 solaR applications of fet
Contextual Info: FET Application Notes Supplimentary Information Low Phase Noise 4268 Solar Way Fremont MwT-7 in 10 GHz FRDRO @ Pout = +15dBm California 94538 Phone: 510 651-6700 Fax: (510) 651-2208 All rights reserved. MicroWave Technology, Inc. All specifications subject to change without notice.

MWT773HP

Abstract: 12GHZ
Contextual Info: bbE D MI CR O W A V E T E C H N O L O G Y • blEMlDG 7^7 HMRIilV MwT - 7 18 GHz Medium Power GaAs FET MicroWave Technology r * i FEATURES r 9! _j U t Û lo»J bo»J 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 J i • +20 dBm POWER OUTPUT AT 12 GHz

Contextual Info: MwT-13 18GHz HIGH POWER GaAs MESFETCHIP MicroWave Technology 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 FEATURES • +27 dBm P-1 dB AT 12 GHz • 7 dB GAIN AT 12 GHz • HIGH THIRD ORDER INTERCEPT • IDEAL FOR BALANCED AMPLIFIER CIRCUITS

MwT-773

Abstract: MwT-771 mwt 773 MWT-7 MwT-770
Contextual Info: MwT-7 26 GHz Medium Power GaAs FET DOWNLOAD ADDITIONAL DATA WWW.MWTINC.COM All Dimensions in Microns CHIP THICKNESS = 125 50 FEATURES 50 • +20 dBm OUTPUT POWER AT 12 GHz • EXCELLENT FOR BROADBAND GAIN OR OSCILLATOR APPLICATIONS • 0.3 MICRON REFRACTORY METAL/GOLD GATE

Contextual Info: MwT-102 2-18 GHz MMIC AMPLIFIER CHIP M / Î 7 MICROWAVE TECHNOLOGY 4268 Solar Way Fremont, CA 94538 510-651-6700 FAX 510-651-2208 • 25 dB TYPICAL REVERSE ISOLATION • ±0.75 dB TYPICAL OUTPUT POWER FLATNESS • 7.5 mA/dB TYPICAL GAIN EFFICIENCY • -16 dBc TYPICAL SECOND HARMONICS AT Psat

AuSn eutectic

Contextual Info: MwT-0618-102DG Ü S 7 6-18 GHz MMIC AMPLIFIER MODULE * >M i c r o W a v e T e c h n o l o g y 4268 Solar Way Fremont, CA 94538 415-651-6700 FAX 415-651-2208 37E ~~j MICROWAVE TECHNOLOGY D blS m O O GG0G074 4 I MRU V r - '7 ^ ^ 3 - o / • • • • • •

1 AGMF

Abstract: IC 2 5/1 AGMF
Contextual Info: MwT-0206S-2P1/0206Z-2P1 2.0-6.0 GHz BALANCED AMPLIFIER MODULE MICROWAVE TECHNOLOGY 4268S olarW ay Fremont, CA 9 4 5 3 8 5 10 -6 5 1 -6 7 0 0 FA X 510 -6 51 -2 2 08 TYPICAL SPECIFICATIONS @ 25°C aii • • • • • • on 23.5 dBm P-1dB 9.5 dBSMALLSIGNAL GAIN

Contextual Info: MwT-A8 16 GHz High Power GaAs FET M ic r o w a v e T e c h n o l o g y p -7 5 * j • • > • • • • p -7 5 * J a 0.6 WATT POWER OUTPUT AT 12 GHz +40 dBm THIRD ORDER INTERCEPT HIGH ASSOCIATED GAIN 0.3 MICRON REFRACTORY METAL/GOLD GATE 1200 MICRON GATE WIDTH

FET SOT-89

Abstract: wimax base station base station high power amplifier GaAS fet sot89 GHz Power FET power amplifier 15 GHz dB dBm
Contextual Info: WPS-495922-02 Microwave Technology, Inc. MwT , 4 . 9 - 5 . 9 GHz • 10 dB Gain • 32 dBm P ld B • 47 dBm IP3 • EVM <2.5% at 26 dBm Pout • Lead-free SMT package WPS-343724-99 3.4 - 3 . 7 GHz • 14 dB Gain • 36 dBm P ld B • EVM <2.0% at 29 dBm Pout