Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This
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MW6IC1940N
MW6IC1940NB/GNB
MW6IC1940NBR1
MW6IC1940GNBR1
28cers,
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AN1977
Abstract: AN1987 AN3263 J1213 MW6IC1940NBR1
Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N-1 Rev. 3.1, 12/2009 ARCHIVE INFORMATION The MW6IC1940GNB wideband integrated circuit is designed with on-chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base
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MW6IC1940N--1
MW6IC1940GNB
MW6IC1940GNBR1
AN1977
AN1987
AN3263
J1213
MW6IC1940NBR1
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CRCW12064701FKTA
Abstract: a113 bolt MW6IC1940NB A113 A114 A115 AN1955 C101 JESD22 MW6IC1940NBR1
Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 1, 1/2007 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This
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MW6IC1940N
MW6IC1940NB/GNB
MW6IC1940NBR1
MW6IC1940GNBR1
MW6IC1940NBR1
CRCW12064701FKTA
a113 bolt
MW6IC1940NB
A113
A114
A115
AN1955
C101
JESD22
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AN1907
Abstract: AN1977 AN1987 MW6IC1940NB MW6IC1940NBR1 1329A-03 AN3789 J1213
Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N-2 Rev. 4.1, 12/2009 RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940NB wideband integrated circuit is designed with on-chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage
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MW6IC1940N--2
MW6IC1940NB
MW6IC1940NBR1
AN1907
AN1977
AN1987
MW6IC1940NBR1
1329A-03
AN3789
J1213
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AN3263
Abstract: MW6IC1940NBR1 AN1977 AN1987 j642 J1213 MW6IC1940NB
Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2.1, 12/2009 ARCHIVE INFORMATION The MW6IC1940NB/GNB wideband integrated circuit is designed with on- chip matching that makes it usable from 1920 to 2000 MHz. This multi-stage structure is rated for 26 to 32 Volt operation and covers all typical
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Original
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MW6IC1940N
MW6IC1940NB/GNB
MW6IC1940NBR1
MW6IC1940GNBR1
MW6IC1940NBR1
AN3263
AN1977
AN1987
j642
J1213
MW6IC1940NB
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power transistors table
Abstract: MW6S010NR1 mrfe6s9060n MHW6342TN Motorola Microwave power Transistor "RF high power Amplifier" MRF6V2300N MRFG35010R1 MRF6P23190HR6 MRF373 PUSH PULL
Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 34 6/2008 RF Product Selector Guide Offering a broad portfolio of RF products, Freescale Semiconductor primarily serves the wireless infrastructure, wireless subscriber, general purpose amplifier, broadcast and industrial markets. Freescale pioneered RF technology and continues to be the leader in the field by providing the quality,
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MRF8P9040N
Abstract: rf Amplifier mhz Doherty 470-860 MRF1513NT1 s2p MRF8S21100H MRF8S21100HS MRF8S9220HR3 AN1643 MRF6P23190H MRF8S9170NR3 MW6S004NT1
Text: RF Products Freescale Semiconductor Selector Guide SG46 Rev. 35.1 5/2010 RF Product Selector Guide Freescale Semiconductor offers a comprehensive portfolio of RF products, primarily serving the cellular infrastructure, general purpose amplifier, broadcast, aerospace and industrial
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MW6IC1940NB
Abstract: A114 A115 AN1977 AN1987 C101 JESD22 MW6IC1940NBR1 J1213
Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 2, 12/2008 ARCHIVE INFORMATION The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical
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Original
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PDF
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MW6IC1940N
MW6IC1940NB/GNB
MW6IC1940NBR1
MW6IC1940GNBR1
MW6IC1940NBR1
MW6IC1940NB
A114
A115
AN1977
AN1987
C101
JESD22
J1213
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Untitled
Abstract: No abstract text available
Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N Rev. 0, 11/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC1940NB/GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This
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MW6IC1940N
MW6IC1940NB/GNB
MW6IC1940NBR1
MW6IC1940GNBR1
MW6IC1940N
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A113
Abstract: A114 A115 AN1977 AN1987 C101 JESD22
Text: Freescale Semiconductor Technical Data RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940GNB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This multi - stage structure is rated for 26 to 32 Volt operation and covers all typical cellular base
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Original
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PDF
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MW6IC1940GNB
MW6IC1940GNBR1
MW6IC1940N-1
A113
A114
A115
AN1977
AN1987
C101
JESD22
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MW6IC1940NB
Abstract: A113 A114 A115 AN1977 AN1987 C101 JESD22 MW6IC1940NBR1 J735
Text: Freescale Semiconductor Technical Data Document Number: MW6IC1940N - 2 Rev. 4, 3/2009 RF LDMOS Wideband Integrated Power Amplifier The MW6IC1940NB wideband integrated circuit is designed with on - chip matching that makes it usable from 1920 to 2000 MHz. This multi - stage
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MW6IC1940N
MW6IC1940NB
MW6IC1940NBR1
MW6IC1940N-2
A113
A114
A115
AN1977
AN1987
C101
JESD22
MW6IC1940NBR1
J735
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