MW51140196 Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level • H i g h power - PldB = 44.5 dBm at 7.7 GHz to 8.5 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM3 = -43 d B c a t Po = 3 4 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P -ld B = 4 4 .5 d B m at 7.7 G H z to 8 .5 G H z

TIM7785-30L

Contextual Info: TOSHIBA TIM7785-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 44.5 dBm at 7.7 GHz to 8.5 GHz