TIM7785-8
Abstract: No abstract text available
Text: TOSHIBA TIM7785-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package
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TIM7785-8
2-11D1B)
MW51070196
TIM7785-8
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-8 Internally Matched Power GaAs FETs C-Band Features • High power - P-iob = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package
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OCR Scan
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MW51070196
1M725G
TIM7785-8
TIM7785-8
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package
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OCR Scan
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TIM7785-8
MW51070196
TIM7785-8
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PDF
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