MW51000196 Search Results
MW51000196 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz • High gain |
OCR Scan |
TIM7179-8L MW51000196 TIM7179-8L itH725G | |
TIM7179-8LContextual Info: TOSHIBA TIM7179-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz • High gain |
Original |
TIM7179-8L 2-11D1B) MW51000196 TIM7179-8L | |
mW51Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - I M 3 = -44 d B c at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 7.1 GHz to 7.9 GHz |
OCR Scan |
TIM7179-8L MW51000196 7179-8L mW51 |