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TE Connectivity SQMW510RJ RES 10 OHM 5% 5W RADIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SQMW510RJ	Bulk	15,761		1	1 $1.15 10 $0.666 100 $0.4044 1000 $0.26123 10000 $0.2229	Buy Now
Avnet Americas	SQMW510RJ	Reel		17 Weeks, 6 Days	1,000	1 - 10 - 100 - 1000 $0.20733 10000 $0.19264	Buy Now
Mouser Electronics	SQMW510RJ		2,087			1 $0.56 10 $0.44 100 $0.338 1000 $0.262 10000 $0.223	Buy Now
Newark	SQMW510RJ	Bulk	539		1	1 $0.13 10 $0.13 100 $0.13 1000 $0.13 10000 $0.13	Buy Now
Interstate Connecting Components	SQMW510RJ		207			1 $0.3088 10 $0.3088 100 $0.3088 1000 $0.2597 10000 $0.2597	Buy Now

Avnet Abacus	SQMW510RJ			16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	SQMW510RJ		7,045			1 - 10 - 100 - 1000 $0.2464 10000 $0.2245	Buy Now
TE Connectivity SQMW5100RJ RES 100 OHM 5% 5W RADIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SQMW5100RJ	Bulk	1,876		1	1 $1.15 10 $0.666 100 $0.4044 1000 $0.26123 10000 $0.2229	Buy Now
Mouser Electronics	SQMW5100RJ		286			1 $0.47 10 $0.407 100 $0.338 1000 $0.261 10000 $0.222	Buy Now
Newark	SQMW5100RJ	Bulk	1,721		1	1 $0.711 10 $0.56 100 $0.375 1000 $0.234 10000 $0.234	Buy Now
Avnet Abacus	SQMW5100RJ			16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	SQMW5100RJ		501			1 $0.3117 10 $0.3117 100 $0.3117 1000 $0.2319 10000 $0.2142	Buy Now
TE Connectivity SMW5100RJT RES SMD 100 OHM 5% 5W 5329
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SMW5100RJT	Reel	1,500		500	1 - 10 - 100 - 1000 $0.41509 10000 $0.38779	Buy Now
Mouser Electronics	SMW5100RJT		1,722			1 $0.8 10 $0.682 100 $0.598 1000 $0.389 10000 $0.387	Buy Now
Newark	SMW5100RJT	Cut Tape	1,250		1	1 $1.03 10 $0.763 100 $0.625 1000 $0.566 10000 $0.566	Buy Now
	SMW5100RJT	Reel			1,000	1 - 10 - 100 - 1000 $0.5 10000 $0.444	Buy Now
Bristol Electronics	SMW5100RJT		125			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TTI	SMW5100RJT	Reel			1,000	1 - 10 - 100 - 1000 $0.418 10000 $0.367	Buy Now

Avnet Abacus	SMW5100RJT			16 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	SMW5100RJT		1,000			1 - 10 - 100 - 1000 $0.3794 10000 $0.3571	Buy Now
KEMET Corporation R75MW51004030J CAP FILM 10UF 5% 400VDC RADIAL
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	R75MW51004030J	Bulk	400		1	1 $7.47 10 $5.154 100 $7.47 1000 $3.42131 10000 $3.09882	Buy Now
Mouser Electronics	R75MW51004030J		311			1 $6.2 10 $5.33 100 $3.99 1000 $3.47 10000 $3.16	Buy Now
Newark	R75MW51004030J	Bulk			1	1 $4.54 10 $3.91 100 $3.24 1000 $3.24 10000 $3.24	Buy Now
TME	R75MW51004030J		15		1	1 $5.72 10 $4.49 100 $3.77 1000 $3.23 10000 $3.07	Buy Now
TE Connectivity SMW510RJT RES SMD 10 OHM 5% 5W 5329
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SMW510RJT	Reel			500	1 - 10 - 100 - 1000 $0.4104 10000 $0.46378	Buy Now
	SMW510RJT	Digi-Reel			1	1 $1.77 10 $1.031 100 $0.6311 1000 $0.52748 10000 $0.52748	Buy Now
	SMW510RJT	Cut Tape			1	1 $1.77 10 $1.031 100 $0.6311 1000 $0.52748 10000 $0.52748	Buy Now
Avnet Americas	SMW510RJT	Reel		15 Weeks, 2 Days	1,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
	SMW510RJT	Reel		22 Weeks, 1 Days	1,000	1 - 10 - 100 - 1000 $0.38024 10000 $0.36528	Buy Now
	SMW510RJT	Ammo Pack		13 Weeks, 6 Days	1	1 $0.566 10 $0.566 100 $0.566 1000 $0.566 10000 $0.566	Buy Now
Mouser Electronics	SMW510RJT					1 $1.09 10 $0.971 100 $0.704 1000 $0.501 10000 $0.501	Get Quote
Newark	SMW510RJT	Cut Tape	413		1,000	1 - 10 - 100 - 1000 $0.566 10000 $0.566	Buy Now
	SMW510RJT	Reel			1,000	1 - 10 - 100 - 1000 $0.5 10000 $0.444	Buy Now
TTI	SMW510RJT	Reel			1,000	1 - 10 - 100 - 1000 $0.564 10000 $0.564	Buy Now

Avnet Abacus	SMW510RJT			17 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Master Electronics	SMW510RJT					1 - 10 - 100 - 1000 $0.3804 10000 $0.3581	Buy Now

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MW510 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
TIM7179-16 Abstract: No abstract text available Text: TOSHIBA TIM7179-16 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package	Original	PDF	TIM7179-16 2-16G1B) MW51020196 TIM7179-16
TIM7785-7L Abstract: No abstract text available Text: TOSHIBA TIM7785-7L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 28.5 dBm, - Single carrier level • High power - P1dB = 38.5 dBm at 7.7 GHz to 8.5 GHz	Original	PDF	TIM7785-7L 2-11D1B) MW51060196 TIM7785-7 TIM7785-7L
TIM7785-8 Abstract: No abstract text available Text: TOSHIBA TIM7785-8 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package	Original	PDF	TIM7785-8 2-11D1B) MW51070196 TIM7785-8
TIM7179-16L Abstract: No abstract text available Text: TOSHIBA TIM7179-16L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 42 dBm at 7.1 GHz to 7.9 GHz	Original	PDF	TIM7179-16L 2-16G1B) MW51030196 TIM7179-16L
ks2000 cables pin serial diagram Abstract: twincat plc programming manual in BK7300 rs485 modbus connection beckhoff MODBUS CONNECTION modbus cable BC7300 KL9010 KL1012 mx508 Text: MODBUS Bus Terminal Controller BC7300 Version: 1.5 Last change: 2006-11-06 Please note the following Target group This description is only intended for the use of trained specialists in control and automation engineering who are familiar with the applicable national	Original	PDF	BC7300 ks2000 cables pin serial diagram twincat plc programming manual in BK7300 rs485 modbus connection beckhoff MODBUS CONNECTION modbus cable BC7300 KL9010 KL1012 mx508
IEC1131-3 Abstract: bc7300 KS2000 ks2000 kabel Lesen Sie mehr! Text: MODBUS Busklemmen Controller BC7300 Version: 1.5 Letzte Änderung: 06.11.06 Bitte beachten Sie folgende Hinweise Zielgruppe Diese Beschreibung wendet sich ausschließlich an ausgebildetes Fachpersonal der Steuerungs- und Automatisierungstechnik, die mit den geltenden nationalen Normen vertraut sind.	Original	PDF	BC7300 IEC1131-3 bc7300 KS2000 ks2000 kabel Lesen Sie mehr!
twincat plc programming manual in Abstract: 16f020 SMALL ELECTRONICS PROJECTS in plc KL9010 C1220 IEC61131-3 Z1000 Z1100 KL1002 PLC PROGRAM beckhoff Text: LIGHTBUS Bus Terminal Controller BC2000 Technical Documentation Version 1.1 2006-11-06 Please note the following Target group This description is only intended for the use of trained specialists in control and automation engineering who are familiar with the applicable national	Original	PDF	BC2000 twincat plc programming manual in 16f020 SMALL ELECTRONICS PROJECTS in plc KL9010 C1220 IEC61131-3 Z1000 Z1100 KL1002 PLC PROGRAM beckhoff
TIM7785-4 Abstract: No abstract text available Text: TOSHIBA TIM7785-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package	Original	PDF	TIM7785-4 2-11D1B) MW51040196 TIM7785-4
TIM7785-4SL Abstract: No abstract text available Text: TOSHIBA TIM7785-4SL MICROWAVE POWER GaAs FET PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25.5 dBm, Single Carrier Level • High power - P1dB = 36.5 dBm at 7.7 GHz to 8.5 GHz	Original	PDF	TIM7785-4SL 2-11D1B) MW51050196 TIM7785-4SL
MW5108 Abstract: TIM7785-8L Text: TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • High power - P1dB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain	Original	PDF	TIM7785-8L 2-11D1B) MW51080196 TIM7785-8L MW5108
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -4 5 d B c at Po = 2 5 .5 d B m , Single Carrier Level • High po w e r	OCR Scan	PDF	TIM7785-4SL MW51050196 7785-4SL
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package	OCR Scan	PDF	TIM7179-16 MW51020196 TIM7179-16
Untitled Abstract: No abstract text available Text: TOSHIBA TIM7785-8L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -44 dBc at Po = 28 dBm, - Single carrier level • H i g h power - P-\|dB = 39 dBm at 7.7 GHz to 8.5 GHz	OCR Scan	PDF	TIM7785-8L MW51080196 TIM7785-8L
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 36.0 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 6.0 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package	OCR Scan	PDF	TIM7785-4 MW51040196 TIM7785-4

Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P1dB = 39.5 dBm at 7.7 GHz to 8.5 GHz	OCR Scan	PDF	TIM7785-8SL TCH7250 TIM7785-8SL MW51090196 TGT725D DG227D4
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -42 dBc at Po = 31.5 dBm, - Single carrier level • High power * P-idB = 42 dBm at 7.1 GHz to 7.9 GHz	OCR Scan	PDF	TIM7179-16L MW51030196 DD22SÃ TIM7179-16L T0T7250 00225A4
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-4SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25.5 dBm, Single Carrier Level • High power - P-idB = 36.5 dBm at 7.7 GHz to 8.5 GHz	OCR Scan	PDF	TIM7785-4SL 0022bfl3 TIM7785-4SL MW51050196 10172SG
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-8 Internally Matched Power GaAs FETs C-Band Features • High power - P-iob = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally matched • Hermetically sealed package	OCR Scan	PDF	MW51070196 1M725G TIM7785-8 TIM7785-8
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8 Internally Matched Power GaAs FETs C-Band Features • High power - P idB = 39 dBm at 7.7 GHz to 8.5 GHz • High gain - G 1dB = 5.5 dB at 7.7 GHz to 8.5 GHz • Broad band internally m atched • H erm etically sealed package	OCR Scan	PDF	TIM7785-8 MW51070196 TIM7785-8
MW5108 Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -44 d B c a t Po = 28 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 39 d B m a t 7.7 G H z to 8.5 G H z	OCR Scan	PDF	TIM7785-8L MW51080196 7785-8L MW5108
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM 3 = -4 5 d B c at Po = 2 8 .5 d B m , Single Carrier Level • High po w e r	OCR Scan	PDF	TIM7785-8SL MW51090196 7785-8SL
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-14L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 31.5 dBm, - Single carrier level • High power - P1dB = 41.5 dBm at 7.1 GHz to 7.9 GHz	OCR Scan	PDF	TIM7179-14L 2-16G1B) MW51010196 DG22573
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-16 Internally Matched Power GaAs FETs C-Band Features • High power - PidB = 42.5 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 5.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package	OCR Scan	PDF	TIM7179-16 TIM7179-16 MW51020196
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET TIM 7785-7L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -43 dBc at Po = 28.5 dBm, - Single carrier level • H i g h power - P-\|dB = 38.5 dBm at 7.7 G H z to 8.5 GHz	OCR Scan	PDF	7785-7L 785-7L TIM7785-7 MW51060196 22bfic

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TIM7179-16

TIM7785-7L

TIM7785-8

TIM7179-16L

ks2000 cables pin serial diagram

IEC1131-3

twincat plc programming manual in

TIM7785-4

TIM7785-4SL

MW5108

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