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    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7179-4 Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G 1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally m atched • H erm etically sealed package


    OCR Scan     		TIM7179-4 MW50970196 TIM7179-4 PDF

    TIM7179-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM7179-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 7.1 GHz to 7.9 GHz • High gain - G1dB = 6.5 dB at 7.1 GHz to 7.9 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM7179-4 2-11D1B) MW50970196 TIM7179-4 PDF