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MW50850196 Datasheets Context Search
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 25 dBm, - Single carrier level • High power - P ld B = 36 dBm at 6.4 GHz to 7.2 GHz |
OCR Scan |
TIM6472-4L MW50850196 CH72SD 0Q22547 TIM5964-4L TCH7250 | |
TIM6472-4L
Abstract: TIM5964-4L
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Original |
TIM6472-4L 2-11D1B) MW50850196 TIM5964-4L TIM6472-4L | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 d B c at Po = 25 dBm, - Single carrier level • High power - P i dB = 36 dBm at 6.4 GHz to 7.2 GHz |
OCR Scan |
TIM6472-4L MW50850196 5964-4L |