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    TIM6472-4

    Abstract: No abstract text available
    Text: TOSHIBA TIM6472-4 MICROWAVE POWER GaAs FET Internally Matched Power GaAs FETs C-Band Features • High power - P1dB = 36.0 dBm at 6.4 GHz to 7.2 GHz • High gain - G1dB = 8.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally matched • Hermetically sealed package


    Original     		TIM6472-4 2-11D1B) MW50840196 TIM6472-4 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA MICROWAVE POWER GaAs FET TIM6472-4 Internally Matched Power GaAs FETs C-Band Features •H ig h power ' p idB = 36.0 dBm at 6.4 GHz to 7.2 GHz • High gain - G1dB = 8.5 dB at 6.4 GHz to 7.2 GHz • Broad band internally matched • Hermetically sealed package


    OCR Scan     		TIM6472-4 MW50840196 TIM6472-4 PDF