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TIM5359-30L

Contextual Info: TOSHIBA TIM5359-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 45 dBm at 5.3 GHz to 5.9 GHz

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low in te rm o d u la tio n d is to rtio n - IM 3 = -45 d B c a t Po = 3 4 .5 d B m , - S in g le c a rrie r level • H igh p o w e r - P idB = 45 d B m a t 5 .3 G H z to 5.9 G H z

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM5359-30L Low Distortion internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - PldB = 45 dBm at 5.3 GHz to 5.9 GHz