Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low interm odulation distortion - IM3 = -45 d B c at Po = 34.5 dBm, - Single carrier level • High power • P-idB = 45 dBm at 3.7 GHz to 4.2 GHz
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OCR Scan
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TIM3742-30L
95GHz
MW50480196
TIM3742-30L
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PDF
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TIM3742-30L
Abstract: No abstract text available
Text: TOSHIBA TIM3742-30L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - P1dB = 45 dBm at 3.7 GHz to 4.2 GHz
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Original
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TIM3742-30L
2-16G1B)
MW50480196
TIM3742-30L
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PDF
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM3742-30L Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 34.5 dBm, - Single carrier level • High power - pidB = 45 dBm at 3.7 GHz to 4.2 GHz
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OCR Scan
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TIM3742-30L
t17250
TIM3742-30L
MW50480196
CI02235b
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PDF
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