MW50350196 Search Results
MW50350196 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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SI 1360 HContextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-10L Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low interm odulation distortion - IM 3 = -45 d B c at Po = 29.0 dBm, - Single carrier level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz |
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TIM1414-10L MW50350196 SI 1360 H | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TIM1414-10LA Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, Single Carrier Level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz • High gain - G1dB = 6.0 dB at 14.0 GHz to 14.5 GHz |
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TIM1414-10LA Inte80 MW50350196 | |
TIM1414-10LContextual Info: TOSHIBA TIM1414-10L MICROWAVE POWER GaAs FET Low Distortion Internally Matched Power GaAs FETs X, Ku-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 29.0 dBm, - Single carrier level • High power - P1dB = 40.5 dBm at 14.0 GHz to 14.5 GHz |
Original |
TIM1414-10L 2-11C1B) MW50350196 TIM1414-10L |