MW40060196 Search Results
MW40060196 Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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TPM2626-30Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-30 High Power GaAs FETs L, S-Band Features • High power - P1dB = 44.5 dBm at 2.6 GHz • High gain - G1dB = 11.5 dB at 2.6 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C) |
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TPM2626-30 2-16G1B) MW40060196 TPM2626-30 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-30 High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 dBm at 2.6 GHz • High gain - G-idB = 11.5 dB at 2.6 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C) |
OCR Scan |
TPM2626-30 MW40060196 TPM2626-30 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-30 High Power GaAs FETs L, S-Band Features • High power - P idB = 44.5 dBm at 2.6 GHz • High gain - G 1dB = 11.5d B at 2.6 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C) |
OCR Scan |
TPM2626-30 MW40060196 | |
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-30 High Power GaAs FETs L, S-Band Features • High power " P-ldB = 4 4 .5 d B m a t 2 6 G H z • High gain - G idB = 11.5 dB at 2.6 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C) |
OCR Scan |
TPM2626-30 MW40060196 |