MW40050196 Search Results

toshiba fet

Abstract: TPM2626-14
Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-14 High Power GaAs FETs L, S-Band Features • High power - P1dB = 42.0 dBm at 2.6 GHz • High gain - G1dB = 12.0 dB at 2.6 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-14 High Power GaAs FETs L, S-Band Features • High power - P idB = 42.0 • High gain dBm at 2.6 GHz - G idB = 12.0 dB at 2.6 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-14 High Power GaAs FETs L, S-Band Features • High power - P idB = 42.0 dBm at 2.6 GHz • High gain - G-icb = 12.0 dB at 2.6 GHz • Partially m atched type • H erm etically sealed package RF Performance Specifications (Ta = 25° C)

S-BAND

Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET TPM2626-14 High Power GaAs FETs L, S-Band Features • High power - P1dB = 42.0 dBm at 2.6 GHz • High gain - G id B = 12.0 dB at 2.6 GHz • Partially matched type • Hermetically sealed package RF Performance Specifications (Ta = 25° C)