MW20070196 Search Results

Contextual Info: TOSHIBA MICROWAVE POWER GaAs MMIC S9747 Features • High power - Po = 26 dBm at Pin = 5 dBm • Super low distortion - Padj = -62 dBc at Po = 25 dBm, 600 kHz offset • High gain - Gp = 21 dB at Pin = 5 dBm • Input/output port matched to 5 0 ii • Hermetically sealed package

S9747

Contextual Info: TOSHIBA S9747 MICROWAVE POWER GaAs MMIC Features • High power - Po = 26 dBm at Pin = 5 dBm • Super low distortion - Padj = -62 dBc at Po = 25 dBm, 600 kHz offset • High gain - Gp = 21 dB at Pin = 5 dBm • Input/output port matched to 50Ω • Hermetically sealed package

MW200

Abstract: S9747 28N-1
Contextual Info: TOSHIBA MICROWAVE POWER GaAs MMIC S9747 Features • High power - Po = 26 dBm at Pin = 5 dBm • Super low distortion - Padj = -62 dBc at Po = 25 dBm, 600 kHz offset • High gain - Gp = 21 dB at Pin = 5 dBm • Input/output port matched to 50Q • Hermetically sealed package