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Catalog Datasheet	MFG & Type	Document Tags	PDF
Untitled Abstract: No abstract text available Text: TOSHIBA MICROWAVE POWER GaAs FET JS8894-AS Power GaAs FETs Chip Form Features • High power - P1(jB = 27.0 dBm at f = 23 GHz • High gain - G1dB = 6.0 dB at f = 23 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)	OCR Scan	JS8894-AS 23GHz MW10170196 JS8894-AS	PDF

Catalog Datasheet

MFG & Type

Document Tags

PDF

Untitled

Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET JS8894-AS Power GaAs FETs Chip Form Features • High power - P1(jB = 27.0 dBm at f = 23 GHz • High gain - G1dB = 6.0 dB at f = 23 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C)

OCR Scan

JS8894-AS 23GHz MW10170196 JS8894-AS

PDF