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MW10160196 Datasheets Context Search
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS8893-AS Power GaAs FETs Chip Form Features • High power - P1dB = 2 4 .0 d B m a tf = 2 3 G H z • High gain - G 1dB = 6.0 dB at f = 23 GHz • Suitable for Ku-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C) |
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JS8893-AS 23GHz MW10160196 JS8893-AS |