MW10050196 Search Results
MW10050196 Datasheets Context Search
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Contextual Info: TOSHIBA MICROWAVE POWER GaAs FET JS 8834-A S Power GaAs FETs Chip Form Features • Medium power - P1dB = 21 dBm at f = 8 GHz • High gain - GidB = at f = 8 GHz • Suitable for C-Band amplifier • Ion implantation • Chip form RF Performance Specifications (Ta = 25° C) |
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834-A JS8834-AS MW10050196 JS8834-AS |