MUTING AND SWITCHING APPLICATION Search Results
MUTING AND SWITCHING APPLICATION Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
---|---|---|---|---|---|
HN1D05FE |
![]() |
Switching Diode, 400 V, 0.1 A, ES6 |
![]() |
||
TBAW56 |
![]() |
Switching Diode, 80 V, 0.215 A, SOT23 |
![]() |
||
TCWA1225G |
![]() |
High Power Switch / SPDT / WCSP14 |
![]() |
||
TCK126BG |
![]() |
Load Switch IC, 1 to 5.5 V, 1 A, WCSP4G |
![]() |
||
1N4148WT |
![]() |
Switching Diode, 100 V, 0.25 A, SOD-523 |
![]() |
MUTING AND SWITCHING APPLICATION Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
---|---|---|---|
Contextual Info: SEMICONDUCTOR KTC2875 TECHNICAL DATA FOR MUTING AND SWITCHING APPLICATION. FEATURES 2009. 3. 12 Revision No : 3 1/3 |
Original |
KTC2875 | |
Contextual Info: 0 O Optical disc ICs Muting 1C for portable CD players o (0 CO o Q. O BA3124F The BA3124F is an IC developed for line output muting in portable CD players, and uses control pin switching to achieve line muting and to eliminate the dull thump that occurs when the power is turned on or off. |
OCR Scan |
BA3124F BA3124F | |
Contextual Info: STICK-ON SERIES Model ST-MA2 Muting Monitor Amplifier ANYWHERE YOU NEED. • • • • • • A Single Speaker Monitor Amplifier A Conferencing Monitor Amp A Monitor Amp with Muting and Externally Actuated Attenuation Steps Fast, Silent Audio Switching |
Original |
||
Contextual Info: SEMICONDUCTOR KRC231M~KRC235M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2008. 11. 20 Revision No : 2 1/3 |
Original |
KRC231M KRC235M | |
Contextual Info: SEMICONDUCTOR KRC231S~KRC235S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES 2011. 6. 29 Revision No : 6 1/3 |
Original |
KRC231S KRC235S | |
PBSS4140
Abstract: PBSS4140T 417 278
|
Original |
PBSS4140T Tamb25OC Tamb25 100mA, 500mA, 100mA 100MHz PBSS4140 PBSS4140T 417 278 | |
PBSS4140T
Abstract: PBSS4140 417 278
|
Original |
PBSS4140T Tamb25OC Tamb25 100mA, 500mA, 100mA 100MHz PBSS4140T PBSS4140 417 278 | |
2SA1954
Abstract: HN7G04FU RN1307
|
Original |
HN7G04FU 2SA1954 RN1307 HN7G04FU | |
Contextual Info: SEMICONDUCTOR KRC231M~KRC235M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. FEATURES ・With Built-in Bias Resistors. ・Simplify Circuit Design. ・Reduce a Quantity of Parts and Manufacturing Process. |
Original |
KRC231M KRC235M KRC231M KRC232M KRC234M KRC233M -50mA, 100MHz | |
PBSS4140TContextual Info: ST PBSS4140T 30 V Low VCE sat NPN Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capabilities ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙General purpose switching and muting ˙LCD backlighting |
Original |
PBSS4140T Tamb25 100mA, 500mA, 100mA 100MHz tp300s PBSS4140T | |
2SA1954
Abstract: HN7G04FU RN1307
|
Original |
HN7G04FU 2SA1954 RN1307 HN7G04FU | |
2SC5974A
Abstract: MUTING AND SWITCHING APPLICATION
|
Original |
2SC5974A 2SC5974A MUTING AND SWITCHING APPLICATION | |
PBSS4140TContextual Info: ST PBSS4140T 30 V Low VCE sat NPN Transistor FEATURES ˙Low collector-emitter saturation voltage ˙High current capabilities ˙Improved device reliability due to reduced heat generation. APPLICATIONS ˙General purpose switching and muting ˙LCD backlighting |
Original |
PBSS4140T Tamb25 100mA, 500mA, 100mA 100MHz tp300s PBSS4140T | |
2SA1955FVContextual Info: 2SA1955FV TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1955FV General Purpose Amplifier Applications Switching and Muting Switch Application 0.22±0.05 Characteristics Symbol Rating Unit Collector-base voltage VCBO −15 V Collector-emitter voltage |
Original |
2SA1955FV 2SA1955FV | |
|
|||
KRC231M
Abstract: KRC232M KRC233M KRC234M KRC235M
|
Original |
KRC231M KRC235M O-92M KRC232M KRC233M KRC234M KRC235M | |
2SC5376FV
Abstract: sat 1205
|
Original |
2SC5376FV 2SC5376FV sat 1205 | |
marking FA
Abstract: 2SC5233
|
OCR Scan |
2SC5233 500mA SC-70 marking FA 2SC5233 | |
NPN Silicon Epitaxial Planar TransistorContextual Info: MMBTRC231S.MMBTRC234S NPN Silicon Epitaxial Planar Transistor For switching, audio muting, interface circuit and driver circuit applications Collector Base R1 Emitter Absolute Maximum Ratings Ta = 25 OC Parameter SOT-23 Plastic Package Symbol Value Unit |
Original |
MMBTRC231S. MMBTRC234S OT-23 MMBTRC231S MMBTRC233S NPN Silicon Epitaxial Planar Transistor | |
Contextual Info: SEMICONDUCTOR KRC231M~KRC235M TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR SWITCHING APPLICATION. AUDIO MUTING APPLICATION. INTERFACE CIRCUIT AND DRIVER CIRCUIT APPLICATION. A B O F FEATURES H ・With Built-in Bias Resistors. M G ・Simplify Circuit Design. |
Original |
KRC231M KRC235M KRC232M KRC233M KRC234M KRC235M -50mA, 100MHz | |
isahaya
Abstract: 2SC5974B
|
Original |
2SC5974B 2SC5974B isahaya | |
isahaya
Abstract: 2SC5974
|
Original |
2SC5974 2SC5974 isahaya | |
2SC5376FVContextual Info: 2SC5376FV TOSHIBA Transistor Silicon NPN Epitaxial Type 2SC5376FV Audio Frequency General Purpose Amplifier Applications For Muting and Switching Applications @IC = 10 mA/IB = 0.5 mA Characteristics Symbol Rating Unit Collector-base voltage VCBO 15 V Collector-emitter voltage |
Original |
2SC5376FV 2SC5376FV | |
Contextual Info: MMBTSA2018 PNP Silicon Epitaxial Planar Transistor Low Frequency Transistor for switching and muting applications. Features: •A collector current is large. •Collector saturation voltage is low. SOT-23 Plastic Package -VCE sat : 250mV(Max.) at -IC=200mA/-IB=10mA |
Original |
MMBTSA2018 OT-23 250mV 200mA/-IB 200mA, 100MHz | |
Contextual Info: 2SA1954 TOSHIBA Transistor Silicon PNP Epitaxial Type PCT process 2SA1954 General Purpose Amplifier Applications Switching and Muting Switch Application • Unit: mm Low saturation voltage: VCE (sat) (1) = −15 mV (typ.) @IC = −10 mA/IB = −0.5 mA • |
Original |
2SA1954 SC-70 |