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    MTP75 Price and Stock

    Voltronics Corporation NMTP75C

    CAP FILM TRIM
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    Voltronics Corporation NMTP75CE

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    Voltronics Corporation NMTP75CFS

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    Banner Engineering Corp IMTP.753P

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    Knowles Corporation NMTP75C

    Trimmer / Variable Capacitors VARCAP, 75PF, 2000 VDC
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    Mouser Electronics NMTP75C
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    MTP75 Datasheets (21)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTP75N03HD Motorola HDTMOS E-FET power field effect transistor Original PDF
    MTP75N03HDL Motorola TMOS POWER FET LOGIC LEVEL 75 AMPERES RDS(on) = 9.0 mOHM 25 VOLTS Original PDF
    MTP75N03HDL On Semiconductor Power MOSFET 75 A, 25 V, Logic Level Original PDF
    MTP75N03HDL Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP75N03HDL On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 30V, 37.5A, Pkg Style TO220AB Scan PDF
    MTP75N03HDL/D On Semiconductor TMOS POWER FET LOGIC LEVEL 75 AMPERES Original PDF
    MTP75N03HDL-D On Semiconductor Power MOSFET 75 Amps, 25 Volts, Logic Level N-Chan Original PDF
    MTP75N05HD Motorola TMOS POWER FET 75 AMPERES, 50 Volts Original PDF
    MTP75N05HD On Semiconductor Power MOSFET 75 A, 50 V Original PDF
    MTP75N05HD Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP75N05HD On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 50V, 37.5A, Pkg Style TO220AB Scan PDF
    MTP75N05HD/D On Semiconductor TMOS POWER FET LOGIC LEVEL 75 AMPERES Original PDF
    MTP75N05HD/D On Semiconductor TMOS POWER FET 75 AMPERES 50 VOLTS Original PDF
    MTP75N05HD-D On Semiconductor Power MOSFET 75 Amps, 50 Volts N-Channel TO-220 Original PDF
    MTP75N06HD Motorola TMOS POWER FET 75 AMPERES RDS(on) = 10.0 mOHM 60 VOLTS Original PDF
    MTP75N06HD On Semiconductor Power MOSFET 75 Amps, 60 Volts Original PDF
    MTP75N06HD Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTP75N06HD On Semiconductor Over 600 obsolete distributor catalogs now available on the Datasheet Archive - Transistor, N Channel, 60V, 37.5A, Pkg Style TO220AB Scan PDF
    MTP75N06HD/D On Semiconductor TMOS POWER FET 75 AMPERES 50 VOLTS Original PDF
    MTP75N06HD-D On Semiconductor Power MOSFET 75 Amps, 60 Volts N-Channel TO-220 Original PDF

    MTP75 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MTP75N05HD equivalent

    Abstract: MTP75N05HD AN569
    Text: MTP75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy–efficient design also offers a drain–to–source diode with a fast recovery time. Designed for


    Original     		PDF MTP75N05HD r14525 MTP75N05HD/D MTP75N05HD equivalent MTP75N05HD AN569

    M75N06

    Abstract: No abstract text available
    Text: MTP75N06HD Preferred Device Power MOSFET 75 A, 60 V, N−Channel, TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		PDF MTP75N06HD MTP75N06HD/D M75N06

    MTP75N05HD

    Abstract: AN569 mosfet transistor 400 volts.100 amperes
    Text: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET  Power Field Effect Transistor Designer's MTP75N05HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 9.5 mΩ


    Original     		PDF MTP75N05HD/D MTP75N05HD MTP75N05HD/D* MTP75N05HD AN569 mosfet transistor 400 volts.100 amperes

    MTP75N06HD

    Abstract: AN569
    Text: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET  High Density Power FET Designer's MTP75N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10.0 mOHM


    Original     		PDF MTP75N06HD/D MTP75N06HD MTP75N06HD/D* MTP75N06HD AN569

    mtp75n05hd

    Abstract: mosfet transistor 400 volts.100 amperes
    Text: MTP75N05HD Preferred Device Power MOSFET 75 Amps, 50 Volts N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy−efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		PDF MTP75N05HD O-220 r14525 MTP75N05HD/D mtp75n05hd mosfet transistor 400 volts.100 amperes

    MTP75N03HDL

    Abstract: MTP75N03HDL/D AN569
    Text: MTP75N03HDL Preferred Device Power MOSFET 75 Amps, 25 Volts, Logic Level N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for


    Original     		PDF MTP75N03HDL r14525 MTP75N03HDL/D MTP75N03HDL MTP75N03HDL/D AN569

    MTP75N03HDL

    Abstract: No abstract text available
    Text: MTP75N03HDL Preferred Device Power MOSFET 75 Amps, 25 Volts, Logic Level N−Channel TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		PDF MTP75N03HDL O-220 r14525 MTP75N03HDL/D MTP75N03HDL

    AN569

    Abstract: MTP75N05HD mosfet transistor 400 volts.100 amperes
    Text: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA HDTMOS E-FET Power Field Effect Transistor MTP75N05HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES 50 VOLTS RDS on = 9.5 mΩ This advanced high–cell density HDTMOS E–FET is designed to


    Original     		PDF MTP75N05HD/D MTP75N05HD AN569 MTP75N05HD mosfet transistor 400 volts.100 amperes

    AN569

    Abstract: MTP75N06HD HDTMOS TRANSISTOR motorola 838
    Text: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet HDTMOS E-FET  High Density Power FET Designer's MTP75N06HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10.0 mOHM


    Original     		PDF MTP75N06HD/D MTP75N06HD MTP75N06HD/D* AN569 MTP75N06HD HDTMOS TRANSISTOR motorola 838

    MTP75N03HDL

    Abstract: MTP75N03HDL/D
    Text: MOTOROLA Order this document by MTP75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information MTP75N03HDL HDTMOS E-FET  High Density Power FET Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET LOGIC LEVEL 75 AMPERES


    Original     		PDF MTP75N03HDL/D MTP75N03HDL MTP75N03HDL/D* MTP75N03HDL MTP75N03HDL/D

    AN569

    Abstract: MTP75N05HD mosfet transistor 400 volts.100 amperes
    Text: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA HDTMOS E-FET  Power Field Effect Transistor MTP75N05HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES 50 VOLTS RDS on = 9.5 mΩ


    Original     		PDF MTP75N05HD/D MTP75N05HD AN569 MTP75N05HD mosfet transistor 400 volts.100 amperes

    M75N06HD

    Abstract: m75n06
    Text: MTP75N06HD Preferred Device Power MOSFET 75 A, 60 V, N−Channel, TO−220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain−to−source diode with a fast recovery time. Designed for


    Original     		PDF MTP75N06HD O-220 MTP75N06HD/D M75N06HD m75n06

    MTP75N06HD

    Abstract: MTP75N06 AN569
    Text: MTP75N06HD Preferred Device Power MOSFET 75 Amps, 60 Volts N–Channel TO–220 This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. The energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for


    Original     		PDF MTP75N06HD r14525 MTP75N06HD/D MTP75N06HD MTP75N06 AN569

    MTP75N05HD

    Abstract: MTP75N05 AN569 mosfet transistor 400 volts.100 amperes
    Text: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA HDTMOS E-FET Power Field Effect Transistor MTP75N05HD Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET 75 AMPERES 50 VOLTS RDS on = 9.5 mΩ This advanced high–cell density HDTMOS E–FET is designed to


    Original     		PDF MTP75N05HD/D MTP75N05HD MTP75N05HD MTP75N05 AN569 mosfet transistor 400 volts.100 amperes

    CS5323

    Abstract: BAS40LT1 CS5323GDW20 CS5323GDWR20 MTD3302 MTP75N06HD NCP5351
    Text: CS5323 Three-Phase Buck Controller with 5-Bit DAC The CS5323 is a three–phase step down controller that incorporates all control functions required to power next generation processors. Proprietary multi–phase architecture guarantees balanced load current


    Original     		PDF CS5323 CS5323 r14525 CS5323/D BAS40LT1 CS5323GDW20 CS5323GDWR20 MTD3302 MTP75N06HD NCP5351

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP75N06HD/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet MTP75N06HD HDTMOS E-FET™ High Density Power FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 75 AMPERES This advanced high-cell density HDTMOS E-FET is designed to


    OCR Scan     		PDF MTP75N06HD/D MTP75N06HD

    75n06hd

    Abstract: MTP75N06
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTP75N06HD HDTM O S E-FET™ High D en sity P o w er FET M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced high—cell density HDTMOS E -F E T is designed to


    OCR Scan     		PDF

    4901 mosfet

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A dvance Information MTP75N03HDL HD TM O S E-FET High D en sity P o w er FET M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate ¥ This advanced high-cell density HDTMOS E -F E T is designed to withstand high energy in the avalanche and commutation modes.


    OCR Scan     		PDF

    Untitled

    Abstract: No abstract text available
    Text: M O TO RO LA Order this document by MTP75N03HDL/D SEMICONDUCTOR TECHNICAL DATA Advanced Information H D TM O S E-FE T High Density Pow er FET M TP75N03HDL Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET LOGIC LEVEL 75 AMPERES


    OCR Scan     		PDF MTP75N03HDL/D TP75N03HDL

    tp75n05hd

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTP75N05HD/D SEMICONDUCTOR TECHNICAL DATA M TP75N 05H D HDTMOS E-FET Pow er Field E ffect Transistor Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate This advanced high-cell density HDTMOS E-FET is designed to


    OCR Scan     		PDF MTP75N05HD/D TP75N 21A-09 tp75n05hd

    FET MOSFET transistor ""

    Abstract: 4912 10VJ AN569 MTP75N06HD
    Text: M O TO RO LA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet MTP75N06HD H DTM O S E-FET™ High D ensity P o w er FET Motorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 75 AMPERES RDS on = 10-° mOHM 60 VOLTS This advanced high-cell density HDTMOS E -F E T is designed to


    OCR Scan     		PDF MTP75N06HD 0E-05 0E-04 0E-03 0E-02 IjOH-01 FET MOSFET transistor "" 4912 10VJ AN569