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    MTD2N50 Price and Stock

    Motorola Semiconductor Products MTD2N50E

    2A, 500V, 3.6OHM, N-CHANNEL, SI, POWER, MOSFET
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    Quest Components MTD2N50E 1,021
    • 1 $0.805
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    • 100 $0.805
    • 1000 $0.2093
    • 10000 $0.2093
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    MTD2N50E 754
    • 1 $8.46
    • 10 $8.46
    • 100 $8.46
    • 1000 $4.23
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    ComSIT USA MTD2N50E 1,096
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    onsemi MTD2N50E

    2A, 500V, 3.6OHM, N-CHANNEL, SI, POWER, MOSFET
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Quest Components MTD2N50E 366
    • 1 $0.45
    • 10 $0.45
    • 100 $0.3
    • 1000 $0.21
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    Others MTD2N50ET4

    INSTOCK
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    Chip 1 Exchange MTD2N50ET4 2,456
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    MTD2N50 Datasheets (16)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MTD2N50 Motorola POWER FIELD EFFECT TRANSISTOR N-CHANNEL ENHANCEMENT-MODE SILICON GATE DPAK FOR SURFACE MOUNT OR INSERTION MOUNT Scan PDF
    MTD2N50 Motorola TMOS power FET. 500 V, 2 A, Rds(on) 4 Ohm. Scan PDF
    MTD2N50 Motorola Switchmode Datasheet Scan PDF
    MTD2N50 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MTD2N50 Unknown FET Data Book Scan PDF
    MTD2N50 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTD2N50-1 Motorola TMOS power FET. 500 V, 2 A, Rds(on) 4 Ohm. Scan PDF
    MTD2N50-1 Unknown FET Data Book Scan PDF
    MTD2N50-1 Unknown Shortform Datasheet & Cross References Data Short Form PDF
    MTD2N50E Motorola TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount Original PDF
    MTD2N50E On Semiconductor Power MOSFET 2 A, 500 V Original PDF
    MTD2N50E Toshiba Power MOSFETs Cross Reference Guide Original PDF
    MTD2N50E1 On Semiconductor Power MOSFET 2 A, 500 V Original PDF
    MTD2N50E/D On Semiconductor TMOS POWER FET 2.0 AMPERES 500 VOLTS Original PDF
    MTD2N50E-D On Semiconductor Power MOSFET 2 Amps, 500 Volts N-Channel DPAK Original PDF
    MTD2N50ET4 On Semiconductor Power MOSFET 2 A, 500 V Original PDF

    MTD2N50 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AN569

    Abstract: MTD2N50 MTD2N50E SMD310
    Text: MOTOROLA Order this document by MTD2N50E/D SEMICONDUCTOR TECHNICAL DATA  Data Sheet TMOS E-FET. Power Field Effect Transistor DPAK for Surface Mount Designer's MTD2N50E Motorola Preferred Device N–Channel Enhancement–Mode Silicon Gate TMOS POWER FET


    Original     		PDF MTD2N50E/D MTD2N50E MTD2N50E/D* AN569 MTD2N50 MTD2N50E SMD310

    t2n50e

    Abstract: 2n50e transistor 2N50E MTD2N50ET4
    Text: MTD2N50E Preferred Device Power MOSFET 2 Amps, 500 Volts N−Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage−blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		PDF MTD2N50E r14525 MTD2N50E/D t2n50e 2n50e transistor 2N50E MTD2N50ET4

    t2n50e

    Abstract: 2n50e transistor 2N50E MTD2N50ET4 MTD2N50E1 MTD2N50 AN569 MTD2N50E
    Text: MTD2N50E Preferred Device Power MOSFET 2 Amps, 500 Volts N–Channel DPAK This high voltage MOSFET uses an advanced termination scheme to provide enhanced voltage–blocking capability without degrading performance over time. In addition this advanced high voltage


    Original     		PDF MTD2N50E r14525 MTD2N50E/D t2n50e 2n50e transistor 2N50E MTD2N50ET4 MTD2N50E1 MTD2N50 AN569 MTD2N50E

    MC68B21CP

    Abstract: xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N
    Text: SG379/D REV 7 Semiconductor Products Sector NORTH AMERICA SALES AND DISTRIBUTION PRICE LIST THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section 1.3 EFFECTIVE DATE: JANUARY 10, 1998 General Information 1 Cross References


    Original     		PDF SG379/D 1N965BRL ZEN15V 1N751AS 1N967BRL ZEN18V 1N751ASRL 1N968BRL ZEN20V MC68B21CP xcm916x1cth16 transistor marking code 12W SOT-23 sg379 MC68B54P XC68HC805P18CDW mc68b50cp MC2830 NE555N CHN NE555N

    mosfet cross reference

    Abstract: Power MOSFET Cross Reference Guide 2SK2146 Cross Reference power MOSFET SUP60NO6-18 MOSFET TOSHIBA 2SK irf510 Motorola SUP70NO6 STP16NEO6 IRF540 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross reference lists MOSFETs by either industry standard part number or by manufacturer's part number for which there is a Motorola nearest or similar replacement. For devices not listed, or for additional information, contact the nearest Motorola Franchised Distributor or your local


    Original     		PDF

    fqp60n06

    Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
    Text: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier


    Original     		PDF STP7NB40 STT3PF30L STD20NE03L STP60NE03L-12 STP60NE03L-10 STP40NF03L STP80NE03L-06 STS4DPF30L fqp60n06 spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640

    Epcos n67 material

    Abstract: AND8016 ac to dc pfc boost converter 500w smps 500w half bridge PFC buck converter design 10000w power supply APPLICATION DIODE 1N5406 bridge rectifier using the diode 1N4007 circuit f MC33260 application smps 500W
    Text: AND8016/D Design of Power Factor Correction Circuit Using Greenline  Compact Power Factor Controller MC33260 http://onsemi.com Prepared by Ming Hian Chew ON Semiconductor Analog Applications Engineering APPLICATION NOTE Introduction The MC33260 is an active power factor controller that


    Original     		PDF AND8016/D MC33260 MC33260 r14153 Epcos n67 material AND8016 ac to dc pfc boost converter 500w smps 500w half bridge PFC buck converter design 10000w power supply APPLICATION DIODE 1N5406 bridge rectifier using the diode 1N4007 circuit f MC33260 application smps 500W

    transistor mosfet buv18a

    Abstract: M143206EVK MMBF4856 lm358 IC 68hc05sc24 telephone line interface circuit bc517 MC68B54 XC68HC705P9 MPX100ap BUV18A
    Text: Device Index and Subject Index In Brief . . . Page Device Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.1–1 General Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–1 Subject Index . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.2–9


    Original     		PDF

    mgb20n40cl

    Abstract: MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V
    Text: TMOS Power MOSFETs Products In Brief . . . Motorola continues to build a world class portfolio of TMOS Power MOSFETs with new advances in silicon and packaging technology. The following new advances have been made in the area of silicon technology. • New high voltage devices with voltages up to


    Original     		PDF smalles40F MGP5N60E MGP20N60 MGW20N60D MGW30N60 MGY30N60D MGY40N60 MGY40N60D MGW12N120 MGW12N120D mgb20n40cl MGB20N40 MGB20N35CL MTD1N60E1 motorola automotive transistor coil ignition MTSF3N03HD MGW12N120 Motorola Master Selection Guide MTD20N06HD MTD20N06V

    transistor marking code 12W SOT-23

    Abstract: MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp
    Text: SG388/D Rev. 1, Aug-1999 ON Semiconductor PUBLICATION ORDERING INFORMATION USA/EUROPE Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5193, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada


    Original     		PDF SG388/D Aug-1999 r14153 transistor marking code 12W SOT-23 MGB20N40CL laptop charging crb kp series stepper motor japan servo co 2n3773 power Amplifier circuit diagrams MJ2955 TRANSISTOR pwm brush dc motor controller sg3526 SG3526 boost controller for PWM fan tl494 tip122 tip127 mosfet audio amp

    SKIIP 33 nec 125 t2

    Abstract: skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302
    Text: Discontinued and Superseded Stock Number History. This document contains Discontinued and Superseded Stock Number History. The information is listed in the following format: Stock Number: The original RS Stock Number of the item. Brief Description: The Invoice Description of the item.


    Original     		PDF 734TL UWEB-MODEM-34 HCS412/WM TLV320AIC10IPFB 100MB NEON250 GA-60XM7E BLK32X40 BLK32X42 SKIIP 33 nec 125 t2 skiip 613 gb 123 ct RBS 6302 ericsson SKIIP 513 gb 173 ct THERMISTOR ml TDK 150M pioneer PAL 010a Project Report of smoke alarm using IC 555 doc SKiip 83 EC 125 T1 ericsson RBS 6000 series INSTALLATION MANUAL Ericsson Installation guide for RBS 6302

    CS5170

    Abstract: mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control
    Text: SGD501/D REV 8, January 5, 2002 NORTH AMERICA SALES AND DISTRIBUTION ON Semiconductor PRICE BOOK THIS BOOK IS IN COMPUTER SORT PRODUCT CLASSIFICATION – Please see General Information Section EFFECTIVE DATE: JANUARY 5, 2002 General Information Elimination Of Ozone Depleting Chemicals . . . .


    Original     		PDF SGD501/D Janua667 CS5170 mps2112 MPS2112ZL1 100A 300V IGBT MC3346P CS4124YDW16 ON Semiconductor PRICE BOOK 12V to 220V smps inverter bd234 igbt ac motor speed control

    IRF9310

    Abstract: mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution
    Text: TMOS Power MOSFET Cross Reference This Cross Reference lists MOSFETs by either industry standard part number or by manufacturer’s part number for which there is an ON Semiconductor nearest or similar replacement. For devices not listed, or for additional


    Original     		PDF device2176 r14153 CR108/D IRF9310 mosfet cross reference korea IRFZ44 IRF 949 replacement BUZ 36 philips master replacement guide 2SK2146 IRF540 substitution MOSFET TOSHIBA 2SK IRF510 substitution

    std2n52

    Abstract: stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent
    Text: POWER MOSFETS CROSS REFERENCE Industry standard 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 2SK1159 2SK1160 2SK1161 2SK1164 2SK1166 2SK1167 2SK1168 2SK1169 2SK1170 2SK1199 2SK1202 2SK1203 2SK1204 2SK1205 2SK1231 2SK1232


    Original     		PDF 2SK1119 2SK1120 2SK1151 2SK1152 2SK1153 2SK1154 2SK1155 2SK1156 2SK1157 2SK1158 std2n52 stp2na60 buz102 equivalent SSH6N80 rfp60n06 replacement for IRL2203N BUZ91 equivalent RFP60N06LE IRFP460 cross reference buz91a equivalent

    MLED96

    Abstract: BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA
    Text: ALPHANUMERIC INDEX DEVICE ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 BAV99LT1 BAW56LT1 BC107,A,B BC109C BC177B BC182 BC212 BC237B BC239 BC307B BC327 BC328 BC337 BC338 BC368 BC369 BC373 BC489 BC490 BC517 BC546,A,B


    Original     		PDF ATV5030 ATV5090B ATV6031 ATV6060H ATV7050 BAL99LT1 BAS16LT1 BAS21LT1 BAV70LT1 BAV74LT1 MLED96 BRX49 SCR MRF549 ATV5030 MRF660 MRF548 mmbr2857lt1 CR2428 MPF3822 MRF548 MOTOROLA

    DIODE MOTOROLA B33

    Abstract: TMOS Power FET mtd2n50-1 369A-10 AN569 MTD2N50 N250 td 3101 n
    Text: M O T O R O L A SC X S T R S / R F bflE D b3b?5S4 D O W N TTfl • MOTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA MTD2N50 Designer's Data Sheet Pow er Field Effect Transistor N-Channel Enhancement-Mode Silico n Gate D PA K for Surface Mount or Insertion Mount


    OCR Scan     		PDF MTD2N50 DIODE MOTOROLA B33 TMOS Power FET mtd2n50-1 369A-10 AN569 MTD2N50 N250 td 3101 n

    Motorola 2N50

    Abstract: 2N50M Motorola t 2N50
    Text: MOTOROLA • SEMICONDUCTOR TECHNICAL DATA MTD2N50 Designer's Data Sheet P o w er Field E ffe c t T ran sisto r N -Channel Enhancem ent-M ode Silicon G ate TM O S DPAK fo r Su rface M o u n t or Insertion M ount TM O S POWER FET 2 AMPERES rDS on = 4 OH M S


    OCR Scan     		PDF MTD2N50 Y145M Y145M. Motorola 2N50 2N50M Motorola t 2N50

    MTD2955-1

    Abstract: CASE369A mt03055 MTD2955 MTD3055EL1 MTD5N10 mte65n12 CASE369 MT02N50 MTD2N40
    Text: - « sy € ft X Vd s or € £ Vg s V S (Ta=25^C) b Pd less (V) * /CH * /CH (A) (W> (nA) Vg s (V) MT02M20 MOT N 200 MTD2N40 MOT N 200 ±20 2 25 ±100 ±20 MTD2N4Û-1 MOT N 200 ±20 2 25 ±100 MTD2N50 MOT N 500 ±20 2 20 ±100 MT D 2 N 5 Û - 1 MOT N 500


    OCR Scan     		PDF MTD2N20 O-252 MTD2N40 CASE369A-04 MTD2N40-1 CASE369-03 MTD2N50 MTD3055E-1 O-251 MTD2955-1 CASE369A mt03055 MTD2955 MTD3055EL1 MTD5N10 mte65n12 CASE369 MT02N50

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MTD2N50E/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet TMOS E-FET™ Power Field Effect Transistor DPAK for S urface Mount N-Channel Enhancement-Mode Silicon Gate This high voltage MOSFET uses an advanced termination


    OCR Scan     		PDF MTD2N50E/D

    2n50e

    Abstract: transistor 2N50E 4-490 MOTOROLA
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D e s ig n e r’s D ata S heet MTD2N50E TMOS E-FET Power Field Effect Transistor DPAK for Surface Mount M otorola Preferred Device N-Channel Enhancement-Mode Silicon Gate TMOS POWER FET 2.0 AMPERES 500 VOLTS T h is h ig h v o lta g e M O S F E T u s e s a n a d v a n c e d te r m in a tio n


    OCR Scan     		PDF 2N50E 2n50e transistor 2N50E 4-490 MOTOROLA

    triac zd 607

    Abstract: 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845
    Text: MASTER SELECTION GUIDE EUROPEAN SUPPLEMENT This is the European supplement to the USA edition of the Master Selection Guide, SG73/D REV 3. It should be read along with the USA edition. The supplement carries amendments to sections 1 and 5 in the USA edition.


    OCR Scan     		PDF SG73/D triac zd 607 1n5204 CA2820 TRW 2N4427 equivalent bfr91 2N6823 842 317 SO8 BD243 PINOUT BD529 bf506 BF845

    MJDI22

    Abstract: No abstract text available
    Text: DPAK DEVICES continued Bipolar Power Transistors Device NPN PNP MJD340 MJD47 MJD350 MJD31 MJD31C MJD148 MJD6O39 W MJD243 MJD200 MJD41C MJD44H11 MJDI22 W MJD30S5 MJD44E3 (1) VCEO(sus) Volts Min Min/Max Am ps 0.5 300 250 350 400 400 100 40 100 45 80 100 25


    OCR Scan     		PDF MJD340 MJD47 MJD50 MJD13003 MJD350 MJD5731 1k/12k MJD31 MJD31C MJDI22

    TB20N20E

    Abstract: MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M
    Text: G CASE 314B-02 5 PIN TO-220 S DRAIN CASE 418B-01 o TMOS SENSEFETs D2PAK* SE N S E FE Ts are con ven tion al pow er M O SFETs w ith an option provided to sen se the drain current by m ea surin g a sm all proportion of the total drain Table 11 — Case 418B-01


    OCR Scan     		PDF 314B-02 O-220) 418B-01 MTB8N50E TB10N40E TB20N20E TB33N10E TB15N06E TB30N06EL MTP30N08M MTD5N08L MTD1N50 MTP40N06M TB20N20 MTP10N10M

    1RFZ40

    Abstract: 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50
    Text: MOTOROLA SC X S T R S /R IME D | F b3b?2S4 Q O fl' iB n 1 | J l 9 / - 6 0 Selection by Package The product listed in Tables t through 22 have been com­ piled on an IBM or compatible personal computer disk for quick selection of product. This versatile disk may be obtained


    OCR Scan     		PDF DK101/D. 0020-frJ 1RFZ40 1RF150 MTP25N10E mth7n50 Transistor MTP35N06E BUZ80a equivalent buz90 equivalent MTP40N06M MFE9200 MTH7N50