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    Abstract: 369A-13 AN569 MTD15N06VL SG59 J50 mosfet
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL Order this document by MTD15N06VUD DATA E DesignerkTMData Sheet — TMOS VTM Power Field Effect Wansistor DPAK for Surface Mount N-Channel Enhancement-Mode Silicon Gate TMOS V is a new technology designed to achieve an on–resistance area product about one–half that of standard MOSFETS. This


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    MTD15N06VUD 602-2W609 ALQQ 369A-13 AN569 MTD15N06VL SG59 J50 mosfet PDF