MT5F Search Results

Contextual Info: SPECIFICATION Tentative target Device Name : IGBT MODULE Type Name : 1MBI600UB-120 Spec. No. : Fuji Electric Co.,Ltd. Matsumoto Factory Oct. 6 ‘03 S.Miyashita T.Miyasaka MT5F 14049 1 3 H04-004-07 1MBI600UB-120 Target specification (Tentative) 1. Outline Drawing ( Unit : mm )

Contextual Info: May 10 '02 S.Yoshiwatari May 10 '02 S.Miyashita T. Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

Contextual Info: Target Specification TENTATIVE This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

2MBI300UD-120

Contextual Info: Fuji Hitachi Power Semiconductor Co.,Ltd IGBT Development Dept. Section M12 <TENTAT1VE> U -series 2 M B I3 0 0 U D -1 2 0 Target specification 1. Outline Drawing ( Unit : mm ) This ma lerïal and the Information herein is the property of Fuji Etectnc Co.Ltd.They shall be neither reproduced, copied,

2MBI200UB-120

Contextual Info: Fuji Hitachi P ow er S em iconductor Co., Ltd IG B T D evelopm ent D ept. S ection M12 <TENTATIVE> U-series 2M B I200U B -120 Target specification 1. Outline Drawing ( Unit : mm ) E2. Cl consent of Fuji Electric Co. L td . CÆ 1 2 3 = 0 2 40 -0 2 TUB TYPE TERMINALS

2MBI75UA-120

Contextual Info: Fuji Hitachi Power Semiconductor Co., Ltd IGBT Development Dept. Section M12 <TENTATIVE> 2 M B I7 5 U A - 1 2 0 Target specification This material and the information herein is the property of Fuji Slecmc Co .Ltd.They shall be neither reproduced, copied

511s

Contextual Info: Ratings and c h arac te ristic s of Fuji I G B T M B T 2 M B I T 5 J — 0 6 O Module (TENTATIVE) 1. Outline Drawing Unit : a* * Isolation Voltage : AC 2500 V 1 limite ìli .l i- 2 : ’ el1li 111 lìti 1|S- 5* sÏ S i r M141* Ww Tab type terminals ¡Ê iïlll

pj 899 diode

Abstract: pj 899 2sk mosfet DD01 it900
Contextual Info: 2 S K 1 5 1 2 MAE 1> • 52307=12 ÜDDlflES ISS C0LH1ER SEMICONDUCTOR INC Scope This specifies Fuji power MOSFET Outline I Construction Q ) Application IS ) Outview “ Ial*i£ > S 3 2 i«i "2O5 3 _j a 3 5 o 0: « ? “ &Ô “ a ORu is e t oi¿ £s § s S

6MBI50U4A-120

Abstract: ED-4701 MS5F6015 MT5F12959
Contextual Info: SPECIFICATION Device Name : IGBT MODULE Type Name : 6MBI50U4A-120 Spec. No. Jan. 18 ’05 S.Miyashita Jan. 18 ’05 T.Miyasaka K.Yamada : Y.Seki MS5F 6015 MS5F6015 1 a 13 H04-004-07b R e v i s e d Date Classification Jan.-18 -’05 Enactment Oct.-25-’05

1MBI600U4-120

Abstract: ED-4701 MS5F6040 MT5F12959
Contextual Info: SPECIFICATION Device Name : IGBT MODULE Type Name : 1MBI600U4-120 Spec. No. Feb. 15 ’05 S.Miyashita Feb. 15 ’05 T.Miyasaka K.Yamada : Y.Seki MS5F 6040 MS5F6040 1 13 H04-004-07b R e v i s e d Date Classification Feb.-15 -’05 Enactment Ind. Content R e c o r d s

2MBI800UG-170

Abstract: ED-4701 MT5F12959 1600A 1700V
Contextual Info: SPECIFICATION Device Name : IGBT MODULE Type Name : 2MBI800UG-170 Spec. No. : MS5F 5924 Sep. 30 ’04 T.Nishimura Sep. 30 ’04 T.Miyasaka Y.Seki MS5F5924 1 13 H04-004-07b R e v i s e d Date Classification Sep.-30-’04 Enactment Ind. Content R e c o r d s

Contextual Info: M IC R O N I M T58LC 128K 16/18C5 128K X 16/18 S Y N C B U R S T SRAM TECHNOLOGY ir.C SYNCHRONOUS SRAM 128KX 16/18 SRAM +3.3V SUPPLY, PIPELINED A N D SELECTABLE B U R S T C O U N T E R FEATURES • • • • • • • • • • • • • • • •

Contextual Info: DATE NAME DRAWN 14-Jul-05 T.Nishimura CHECKED 14-Jul-05 H.Kakiki T.Miyasaka DWG.No. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

7MBP25RU2A120

Abstract: marking code C1L 100DC AC2500 ED-4701 H04-004 HCPL-4504 MT5F12959 block diagram of electric cooker
Contextual Info: This m aterial and the inform ation herein is the p ro p e rty o f Fuji E lectric D evice Technology C o., Ltd. They shall be neither reproduced, copied .lent, or disclosed in any w ay w hatsoever for the use of any third party nor used fo r the m anufacturing purposes w ithou t the exp ress w ritte n consent of

Contextual Info: ADVANCE 128Kx 16/18 SRAM SYNCHRONOUS SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • PIN ASSIGNMENT Top View F a st a c c e s s tim e s: 4.5, 5, 5.5, 6 a n d 7 n s F a st O E # a c c e s s tim e: 4.5, 5, 5.5 a n d 6 n s

MT58LC256K18

Abstract: ct901
Contextual Info: ADVANCE 256K SYNCHRONOUS SRAM 256Kx 16/18 SRAM +3.3V SUPPLY, +2.5V I/O, PIPELINED AND SELECTABLE BURST MODE FEATURES • • • • • • • • • • • • • • • • • • PIN ASSIGNMENT Top View F ast access tim es: 4.5, 5, 5.5, 6 an d 7ns

2SK10

Abstract: 2SK1016 ISE40
Contextual Info: Fuji power MOSFET Specification 2 S 1. Scope This specifies Fuji power MOSFET 2. Outline I Construction II ) Appi ication M) Outview 1 1 6 — O l 2 S K 1 0 16 — 0 1 N-channel enhancement mode power MOSFET for switching Î0-3P MK5C24097) 3. Absolute naxiatua ratings

1MBH50-090

Contextual Info: Ratings and characteristics of FUJI IGBT 1. 1M B H 5 0 - 0 9 0 M B T 0 0 2 2. Abosolute aaxinun ratings (Tc=25T) Items Symbols Conditions Unit Ratings Collector-Enitter Voltage V CES 900 V Gate-Eaitter Voltage VCES ± 20 V Ic 50 A I cr 150 Hax.Power dissipation

2MBI450U4N-120-50

Abstract: 2mbi450u4n ED-4701 MT5F12959
Contextual Info: SPECIFICATION Device Name : IGBT MODULE RoHS compliant product Type Name Spec. No. Feb. 14 ’06 : : 2MBI450U4N-120-50 MS5F 6507 H.Kaneda Feb. 14 ’06 M.W atanabe T.Miyasaka K.Yamada MS5F6507 a 1 14 H04-004-07b R e v i s e d Date Classification Feb. -14 -’06

100300

Abstract: ic lm 7500
Contextual Info: This material and lho information herein is the property of Fuji Elecmc Co.Ltd They shall be neither reproduced copied lent, or disclosed in any way whatsoever for the use of any third party.nor used for the manufacturing purposes without the express written consent of Fuji Electric Co. Ltd.

251C

Abstract: 500C a052d
Contextual Info: Target Specification of 1. Outline Drawine Unit 2MB I 1 5 0 S - 120 : mm « 'C r = i w ° Os i♦S Í ’ Û. S «V € et»3 ¿ .J • * e «w. cO) << Ç•? i . !£ lIV *g; 2 ‘ > ’ z. *J¿ •gül ? . ? € c ;ì « ? s2 :* «« ,o ; .ç ? Tab type temurvaJs

2MBI450U4E-120

Abstract: 2mbi450u4e 2mbi450u4e120 ms5f6057 ED-4701 MT5F12959 2MBI450U4
Contextual Info: SPECIFICATION Device Name : Type Name : Spec. No. Mar. 09 ’05 S.Miyashita Mar. 09 ’05 T.Miyasaka K.Yamada : Y.Seki IGBT MODULE 2MBI450U4E-120 MS5F 6057 MS5F6057 1 13 H04-004-07b R e v i s e d Date Classification Mar.-09 -’05 Enactment Ind. Content R e c o r d s

6MBI225U-170

Abstract: ED-4701 MT5F12959
Contextual Info: SPECIFICATION Device Name : IGBT Module Type Name : 6MBI225U-170 Spec. No. : MS5F 5391 Fuji Electric Co.,Ltd. Matsumoto Factory Mar. 3 ’03 S.Yoshiwatari Mar. 3 ’03 T.Miyasaka Mar.- 3 -’03 K.Yamada T.Fujihira MS5F 5391 1 14 H04-004-07 Revised Records

2MBI200UD-120

Abstract: ED-4701 MT5F12959
Contextual Info: SPECIFICATION Device Name : IGBT Module Type Name : 2MBI200UD-120 Spec. No. : MS5F 5444 Fuji Electric Co.,Ltd. Matsumoto Factory Apr. 25 ’03 Y.Kobayashi Apr. 25 ’03 T.Miyasaka K.Yamada T.Fujihira MS5F 5444 a b 1 13 H04-004-07 Revised Records Date Classification