MT55L256L18F Search Results

Contextual Info: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • •

Contextual Info: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM MICRON' I TECHNOLOGY, INC. MT55L256L18F, MT55L128L32F, MT55L128L36F; MT55L256V18F, MT55L128V32F, MT55L128V36F 4Mb ZBT8SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES High frequency and 100 percent bus utilization

IDT71V546

Abstract: IDT71V547 MCM63Z736 MCM63Z737 MCM63Z818 MCM63Z819
Contextual Info: CY1350/51/52/53 • Pin compatible and functionally equivalent to ZBT devices IDT71V546, MT55L128L36P, MCM63Z736, IDT71V547, MT55L128L36F, MCM63Z737, MCM63Z818, MT55L256L18P, MCM63Z819 and MT55L256L18F • Supports 143-MHz bus operations with zero wait states—Data is transferred on every clock

Contextual Info: 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • •

Contextual Info: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • •

Contextual Info: ADVANCE IU IIC R D N 2 5 6 K X 1 8 , 1 2 o K X 3 2 /3 6 I LVTTL, FLOW-THROUGH ZBT SRAM d R M h H - .U IV I U MT55L256L18F, MT55L128L32F, MT55L128L36F ZBT SRAM 3.3V V dd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • •

CY7C1353S

Contextual Info: CY7C1353 256Kx18 Flow-Through SRAM with NoBL Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices MCM63Z819 and MT55L256L18F • Supports 66-M Hz bus operations with zero wait states — Data is transferred on every clock

CY7C1353B

Abstract: MCM63Z819
Contextual Info: CY7C1353B PRELIMINARY 256Kx18 Flow-Through SRAM with NoBL Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices MCM63Z819 and MT55L256L18F • Supports 117-MHz bus operations with zero wait states

Contextual Info: fax id: 1104 PRELIMINARY CY7C1353 CYPRESS 256Kx18 Flow-Through SRAM with NoBL Architecture Functional Description Features • Pin com patible and functionally equivalent to ZBT™ devices MCM63Z819 and MT55L256L18F • Supports 66-M Hz bus operations with zero wait states

Contextual Info: ADVANCE M i m n M 2 5 b K X 1 8 , 1 2 8 K X 3 2 /3 6 I LVTTL, FLOW-THROUGH ZBT SRAM d R M h H - .U IV I U MT55L256L18F, MT55L128L32F, MT55L128L36F ZBT SRAM 3.3V Vdd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • •

Contextual Info: 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • •

micron sram

Abstract: MS-026 MT55L256L18FT-11
Contextual Info: ADVANCE 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM MT55L256L18F, MT55L128L32F, MT55L128L36F; MT55L256V18F, MT55L128V32F, MT55L128V36F 4Mb ZBT SRAM 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • •

CY7C1353

Abstract: MCM63Z819
Contextual Info: 353 CY7C1353 256Kx18 Flow-Through SRAM with NoBL Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices MCM63Z819 and MT55L256L18F • Supports 66-MHz bus operations with zero wait states — Data is transferred on every clock

353B

Abstract: CY7C1353B MCM63Z819
Contextual Info: 353B CY7C1353B PRELIMINARY 256Kx18 Flow-Through SRAM with NoBL Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT™ devices MCM63Z819 and MT55L256L18F • Supports 117-MHz bus operations with zero wait states

MT55L128

Contextual Info: AD VA NC E 25 6 K x 18, 12 8 K x 32/ 36 LVTTL, F L O W - T H R O U G H ZBT SRAM MICRON U TECHNOLOGY, INC. MT55L256L18F, MT55L128L32F, MT55L128L36F 4.5Mb ZBT SRAM 3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization

Contextual Info: ADVANCE M I^ P n M 8 I 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM MT55L256L18F, MT55L128L32F, MT55L128L36F; MT55L256V18F, MT55L128V32F, MT55L128V36F 4Mb ZBT SRAM 3.3V V dd, 3.3V or 2.5V I/O FEATURES • • • • H ig h frequency an d 100 p ercen t b u s utilization

D6510

Contextual Info: ADVANCE 25 6 K x 18, 12 8 K x 32/ 36 LVTTL, F L O W - T H R O U G H ZBT SRAM MT55L256L18F, MT55L128L32F, MT55L128L36F 4.5Mb ZBTSRAM 3.3V V dd, Selectable Burst Mode FEATURES * * * * * * * * * * * * * * * * * High frequency and 100 percent bus utilization Fast cycle times: 10,11 and 12ns

CY7C1353

Abstract: MCM63Z819 A1413-5
Contextual Info: 1353 CY7C1353 256Kx18 Flow-Through SRAM with NoBL Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT devices MCM63Z819 and MT55L256L18F • Supports 66-MHz bus operations with zero wait states — Data is transferred on every clock

MS-026

Abstract: MT55L128L32F1 MT55L128L36F1 MT55L128V32F1 MT55L128V36F1 MT55L256L18F1 MT55L256L18F1T-12 MT55L256V18F1
Contextual Info: 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • •

GW 9n

Abstract: MS-026 MT55L128L32F1 MT55L128L36F1 MT55L128V32F1 MT55L128V36F1 MT55L256L18F1 MT55L256V18F1 TSOP 48 thermal resistance junction to case
Contextual Info: PRELIMINARY 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • •

9w9w

Contextual Info: ID[ LG Back &<& PRELIMINARY 256Kx18 Flow-Through SRAM with NoBL Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT devices MCM63Z819 and MT55L256L18F • Supports 66-MHz bus operations with zero wait states

Contextual Info: ID[ LG &<& PRELIMINARY 256Kx18 Flow-Through SRAM with NoBL Architecture Features Functional Description • Pin compatible and functionally equivalent to ZBT devices MCM63Z819 and MT55L256L18F • Supports 66-MHz bus operations with zero wait states

Contextual Info: ADVANCE MT55L256L18F, MT55L128L32F, MT55L128L36F 4.5Mb ZBT SRAM 3.3V Vdd, Selectable Burst Mode FEATURES • • • • • • • • • • • • • • • • • High frequency and 100 percent bus utilization Fast cycle times: 10ns, 10.5ns, 11ns and 12ns

micron memory sram

Abstract: micron sram MS-026 MT55L128L32F1 MT55L128L36F1 MT55L128V32F1 MT55L128V36F1 MT55L256L18F1 MT55L256L18F1T-12 MT55L256V18F1
Contextual Info: 4Mb: 256K x 18, 128K x 32/36 FLOW-THROUGH ZBT SRAM 4Mb ZBT SRAM MT55L256L18F1, MT55L128L32F1, MT55L128L36F1; MT55L256V18F1, MT55L128V32F1, MT55L128V36F1 3.3V VDD, 3.3V or 2.5V I/O FEATURES • • • • • • • • • • • • • • • • •