MT3S07T Search Results

Contextual Info: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 Q2 MT3S07T MT3S05T MT3S07FS (MT3S05FS) Corresponding three-pin products: TESM(fSM) mold products Rating Symbol

Contextual Info: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. TESM(fSM) mold products Q2 MT3S07T MT3S11T (MT3S07FS)

MT3S05FS

Abstract: MT3S05T MT3S07FS MT3S07T MT6L55FS
Contextual Info: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products 6 2 5 3 4 +0.02 Q1 Q2 MT3S07T MT3S05T (MT3S07FS) (MT3S05FS) Corresponding three-pin products:

MT3S07T

Contextual Info: TO SH IBA MT3S07T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07T VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ± 0.05 NF = 1.5 dB Vf!F, = 3 V, In = 5 mA, f = 2 GHz Low Noise Figure • High Gain 0.8 ± 0.05 : IS o i J2 = Q K r\T\

MA1012

Abstract: MT3S07T
Contextual Info: MT3S07T 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S07T ○ VHF~UHF 帯低電圧動作•低雑音タイプ • 単位: mm 雑音特性が優れています。 : NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz : |S21e|2 = 9.5dB

014E

Abstract: 200E 800E MT3S07T
Contextual Info: MT3S07T SPICE parameters UCB SPICE2G6 20020401 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S07T 1 2 3 3 18 2.014E-02 9 19 2.014E-02 6 18 2.260E-10 6 19

Contextual Info: TOSHIBA MT3S07T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07T Unit in mm VHF-U HF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ±0.05 0.8 ± 0.05 Low Noise Figure : NF = 1.5 dB VCE = 3 V, IC = 5 mA, f = 2 GHz High Gain : |S2i e|2 = 9.5 dB

MT3S07FS

Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
Contextual Info: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05

Contextual Info: MT3S07T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07T VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 15 mA, f = 2 GHz) Unit: mm

MT3S07FS

Abstract: MT3S07T MT3S11FS MT3S11T MT6L63FS
Contextual Info: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) 2 5 3 4 0.15±0.05

MT3S07T

Contextual Info: MT3S07T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07T VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 15 mA, f = 2 GHz) Unit: mm

MT3S07T

Contextual Info: TO SH IBA MT3S07T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07T VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ±0 .0 5 NF = 1.5 dB Vf!F, = 3 V, In = 5 mA, f = 2 GHz Low Noise Figure • High Gain 0.8 ± 0.05 : IS o i J2 = Q K r\T\

Contextual Info: TO SH IBA MT3S07T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S07T Unit in mm VHF—UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • • 1.2 ±0.05 0.8 ± 0.05 Low Noise Figure : NF = 1.5 dB V C E = 3V, IC = 5mA, f = 2 GHz High Gain : |S2le|2 = 9-5 dB

MT3S07T

Contextual Info: MT3S07T TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S07T VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.5dB VCE = 3 V, IC = 5 mA, f = 2 GHz • High gain: |S21e|2 = 9.5dB (VCE = 3 V, IC = 15 mA, f = 2 GHz) Unit: mm

Contextual Info: MT6L63FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L63FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm Two devices are incorporated in a fine-pitch, small-mold package 6 pins : fS6. Q2 MT3S07T MT3S11T (MT3S07FS) (MT3S11FS) Rating Symbol

Contextual Info: MT6L55FS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55FS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S07T MT3S05T (MT3S07FS) (MT3S05FS) Maximum Ratings (Ta = 25°C) Characteristic fS6

Contextual Info: TO SH IBA MT6L59E TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L59E V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • Unit in mm TWO devices are built in to the super-thin and ultra super mini 6 pins package : ES6 y m i M T c n n c x / ir c c

Contextual Info: MT6L55E Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L55E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.

Contextual Info: MT6L56E Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L56E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.

Contextual Info: MT6L55S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L55S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6

Contextual Info: MT6L55E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L55E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.

MT6L55E

Abstract: MT3S07S MT3S07T
Contextual Info: MT6L55E TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L55E VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the super-thin and ultra-super-mini 6-pin ES6 package.

MT3S07S

Abstract: MT3S07T MT3S08T MT6L56S
Contextual Info: MT6L56S TOSHIBA Transistor Silicon NPN Epitaxial Planar Type Preliminary MT6L56S VHF-UHF Band Low Noise Amplifier Application VHF-UHF Band Oscillator Application • Unit: mm Two devices are built into the sES6 package, which is smaller and thinner than the super-thin and ultra-super-mini 6-pin ES6

TA4029CTC

Abstract: TA4032FT TB7602TU MT4S300T MT4S300U MT4S301T TA4029TU SOT-24 MT4S300 RFM12U7X
Contextual Info: 製品カタログ 2011-1 東芝半導体 製品カタログ 高周波用半導体デバイス SEMICONDUCTOR h t t p : / / w w w . s e m i c o n . t o s h i b a . c o . j p / C O N T E N T S 1 アプリケーション別推奨製品 .3~8