EG 8010
Abstract: transistor 9018 NPN
Text: MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB at f = 1 GHz • High gain: gain = 12.5dB (at f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)
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MT3S04AT
EG 8010
transistor 9018 NPN
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Untitled
Abstract: No abstract text available
Text: MT6L57AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT6L57AFS VHF~UHF Band Low-Noise Amplifier Applications Unit: mm 1.0±0.05 0.8±0.05 TESM fSM mold products Q2 MT3S06T MT3S04AT (MT3S06FS) (MT3S04AFS) Maximum Ratings (Ta = 25°C) fS6 Characteristic
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MT6L57AFS
MT3S06T
MT3S06FS)
MT3S04AT
MT3S04AFS)
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MT3S04AS
Abstract: No abstract text available
Text: MT3S04AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AS VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB f = 1 GHz • High gain: Gain = 12.5dB (f = 1 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics
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MT3S04AS
MT3S04AS
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014E
Abstract: 200E 800E MT3S04AT 7880e13 5810E
Text: MT3S04AT SPICE parameters UCB SPICE2G6 20020225 NET LIST .SUBCKT Re1 Re2 Le1 Le2 Ceg1 Ceg2 Rb1 Rb2 Lb1 Lb2 Cbg1 Cbg2 Rc1 Rc2 Lc1 Lc2 Ccg1 Ccg2 Cbe1 Cbc1 Cce1 Cbe2 Le3 Re3 Lb3 Rb3 Cbe3 Cce2 Cbc2 MT3S04AT 3 18 9 19 6 18 6 19 6 0 9 0 2 15 8 16 5 15 5 16 5 0
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MT3S04AT
MT3S04AT
014E-02
260E-10
800E-13
346E-14
014E
200E
800E
7880e13
5810E
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MT3S04AFS
Abstract: No abstract text available
Text: MT3S04AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AFS Unit: mm • Superior performance in oscillator applications Superior noise characteristics : NF = 1.3 dB, |S21e|2 = 9.5 dB f = 1 GHz 1 3 2 Lead (Pb)-free. 0.8±0.05 1.0±0.05 0.1±0.05
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MT3S04AFS
MT3S04AFS
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MT3S04AFS
Abstract: No abstract text available
Text: MT3S04AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AFS Unit: mm Superior performance in oscillator applications Superior noise characteristics 0.6±0.05 • • 2 1 3 2 0.8±0.05 1.0±0.05 0.1±0.05 +0.02 0.48 -0.04 : NF = 1.3 dB, |S21e| = 9.5 dB f = 1 GHz
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MT3S04AFS
MT3S04AFS
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MT3S04AFS
Abstract: No abstract text available
Text: MT3S04AFS TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AFS Unit: mm Superior performance in oscillator applications Superior noise characteristics 2 0.35±0.05 • • 0.6±0.05 VHF~UHF Band Oscillator Applications 0.2±0.05 0.15±0.05 VHF~UHF Band Low-Noise Amplifier Applications
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MT3S04AFS
MT3S04AFS
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MT3S04AS
Abstract: No abstract text available
Text: MT3S04AS Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AS VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB f = 1 GHz • High gain: Gain = 12.5dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C)
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MT3S04AS
MT3S04AS
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4317 0215 transistor
Abstract: MT3S04AT IB 6415
Text: MT3S04AT Preliminary TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AT VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB at f = 1 GHz • High gain: gain = 12.5dB (at f = 1 GHz) Unit: mm Maximum Ratings (Ta = 25°C)
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MT3S04AT
4317 0215 transistor
MT3S04AT
IB 6415
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Untitled
Abstract: No abstract text available
Text: MT3S04A 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S04A ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • NF = 1.2dB f= 1 GHz ，|S21e |2 単位: mm = 12.5dB (f = 1 GHz) 絶対最大定格 (Ta = 25°C) 項 目
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MT3S04A
SC-59
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MT3S04AU
Abstract: No abstract text available
Text: MT3S04AU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB f = 1 GHz • High gain: Gain = 12.5dB (f = 1 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics
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MT3S04AU
SC-70
S21e2
MT3S04AU
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amplifier TRANSISTOR 12 GHZ
Abstract: No abstract text available
Text: MT3S04A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB f = 1 GHz • High gain: Gain = 12.5dB (f = 1 GHz) Unit: mm Maximum Ratings (Ta = 25°C) Characteristic Symbol
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MT3S04A
SC-59
amplifier TRANSISTOR 12 GHZ
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Untitled
Abstract: No abstract text available
Text: MT3S04AU TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04AU VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB f = 1 GHz • High gain: Gain = 12.5dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics
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MT3S04AU
SC-70
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Untitled
Abstract: No abstract text available
Text: MT3S04A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB f = 1 GHz • High gain: Gain = 12.5dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic
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MT3S04A
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MT3S04AS
Abstract: No abstract text available
Text: MT3S04AS 暫定資料 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S04AS ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • 雑音特性が優れています。: NF = 1.2dB, |S21e |2 単位: mm = 12.5dB f = 1 GHz
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MT3S04AS
MT3S04AS
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MT3S04AU
Abstract: No abstract text available
Text: MT3S04AU 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S04AU ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • 雑音特性が優れています。: NF = 1.2dB, |S21e |2 単位: mm = 12.5dB f = 1 GHz 絶対最大定格 (Ta = 25°C)
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MT3S04AU
SC-70
MT3S04AU
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MT3S04AFS
Abstract: No abstract text available
Text: MT3S04AFS 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S04AFS 単位: mm • 雑音特性が優れています。 2 : NF = 1.3 dB, |S21e| = 9.5 dB f = 1 GHz 0.2±0.05 OSC 用途に優れています。 0.6±0.05 0.35±0.05
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MT3S04AFS
MT3S04AFS
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IC 14049
Abstract: MT3S04AT ic 8853 IB 6415 IC 7306
Text: MT3S04AT 東芝トランジスタ シリコンNPNエピタキシャルプレーナ形 MT3S04AT ○ VHF~UHF 帯低電圧動作•低位相雑音タイプ • 雑音特性が優れています。: NF = 1.2dB, |S21e |2 単位: mm = 12.5dB f = 1 GHz 絶対最大定格 (Ta = 25°C)
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MT3S04AT
IC 14049
MT3S04AT
ic 8853
IB 6415
IC 7306
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Untitled
Abstract: No abstract text available
Text: MT3S04A TOSHIBA Transistor Silicon NPN Epitaxial Planar Type MT3S04A VHF~UHF Band Low Noise Amplifier Applications • Low noise figure: NF = 1.2dB f = 1 GHz • High gain: Gain = 12.5dB (f = 1 GHz) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic
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MT3S04A
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2493 transistor
Abstract: marking 9721 IC 7109
Text: TO SH IBA MT3S04AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ± 0 .0 5 0.8 ± 0.05 Low Noise Figure : NF = 1.2 dB at f = 1 GHz TT irrV » fio in JJlg ll V ^ U lll
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MT3S04AT
IS21I2
2493 transistor
marking 9721
IC 7109
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MT3S04AS
Abstract: No abstract text available
Text: TO SH IBA MT3S04AS TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT 3 S 0 4 AS Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C)
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MT3S04AS
MT3S04AS
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Untitled
Abstract: No abstract text available
Text: TO SH IBA MT3S04AU TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AU VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz MAXIMUM RATINGS (Ta = 25°C) CHARACTERISTIC
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MT3S04AU
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Untitled
Abstract: No abstract text available
Text: TO SH IBA MT3S04AS TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AS Unit in mm VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS • • Low Noise : Figure : NF = 1.2 dB High Gain : Gain = 12.5 dB f = 1 GHz 1.6 ±0.2 ,0.8 ± 0 . 1,
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MT3S04AS
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toshiba 5564
Abstract: 6922 EH 4317 0215 transistor MT3S04AT NPN Silicon Epitaxial Planar Transistor 9018 9018 transistor
Text: TO SH IBA MT3S04AT TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE MT3S04AT VH F-U H F BAND LOW NOISE AMPLIFIER APPLICATIONS Unit in mm 1.2 ±0 .0 5 • Low Noise Figure : NF = 1.2 dB at f = 1 GHz * High Gain 0.8 ± 0.05 MAXIMUM RATINGS (Ta = 25°C)
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MT3S04AT
CHARAC83
toshiba 5564
6922 EH
4317 0215 transistor
MT3S04AT
NPN Silicon Epitaxial Planar Transistor 9018
9018 transistor
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