MT3S03T Search Results

MT3S03T

Contextual Info: TO SHIBA MT3S03T MT3S03T TOSHIBA TRANSISTOR TENTATIVE SILICON NPN EPITAXIAL PLANAR TYPE VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ±0.05 • Low Noise Figure : NF = 1.4 dB at f = 2 GHz • High Gain 0.8 ± 0.05 : Gain = 8 dB (at f = 2 GHz)

Contextual Info: TO SHIBA TENTATIVE MT3S03T TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT3S03T V H F -U H F BAND LOW NOISE AMPLIFIER APPLICATIOS Unit in mm 1.2 ± 0.05 • Low Noise Figure : NF = 1.4 dB at f = 2 GHz • High Gain 0.8 ± 0.05 : Gain = 8 dB (at f = 2 GHz)

specifications of ic 8038

Abstract: ic LC 7815
Contextual Info: TOSHIBA MT3S03T MT3S03T TENTATIVE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm V H F-U H F BAND LOW NOISE AMPLIFIER APPLICATIOS • • Low Noise Figure : NF = 1.4 dB at f = 2 GHz High Gain : Gain —8 dB (at f = 2 GHz) MAXIMUM RATINGS (Ta = 25°C)

Contextual Info: T O S H IB A MT6L52AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L52AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES

Contextual Info: T O S H IB A MT6L52AE TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE MT6L52AE Unit in mm VHF-UHF BAND LOW NOISE AMPLIFIER APPLICATIONS • TWO devices are built in to the super-thin and extreme super mini 6 pins package : ES6 in O o MOUNTED DEVICES

2SK3075 equivalent

Abstract: 10 ghz transistor 2SK3078 MT3S04T 2SC5066 MT6P03AE MT6P06E 3SK320 24lu1 transistor 2SC5066
Contextual Info: High-Frequency Devices for Mobile Communications PRODUCT GUIDE 800 MHz Band Analog and Digital Cellular High-Frequency Block Diagram Ant. RF Amp Mixer RX IF detection Prescaler VCO 1 900 MHz Buff Amp Buff Amp OSC (1) Tuning DUP Prescaler Buff Amp VCO (2) 100 MHz