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    MT108 MOTOROLA TRANSISTOR Search Results

    MT108 MOTOROLA TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    MT108 MOTOROLA TRANSISTOR Datasheets Context Search

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    MT108 motorola transistor

    Abstract: mt108 MMFT108T1 SMD310
    Text: MOTOROLA Order this document by MMFT108T1/D SEMICONDUCTOR TECHNICAL DATA Field Effect Transistor MMFT108T1 N–Channel Enhancement–Mode Logic Level SOT–223  2, 4 DRAIN TMOS FET TRANSISTOR N–CHANNEL — ENHANCEMENT 1 GATE 4 3 SOURCE 1 2 3 CASE 318E–04, STYLE 3


    Original     		MMFT108T1/D MMFT108T1 261AA) MT108 MT108 motorola transistor mt108 MMFT108T1 SMD310 PDF

    MT108

    Abstract: MMFT108T1
    Text: MOTOROLA SEMICONDUCTOR ~ w TECHNICAL Order this document byMMH108T1/D DATA Field Effect ~ansistor MMFTI08TI N-Channel Enhancement-Mode Logic Level SOT-223 TMOS- 2,4 DRAIN 1 GATE @ CASE 318E+4, STVLE 3 SOT-223 ~0-261AA MAXIMUM RATINGS I Rating I Drain-t&SourceVoltage


    Original     		byMMH108T1/D MMFTI08TI OT-223 0-261AA) MT108 602-2H609 108T1/D MT108 MMFT108T1 PDF