MSM5117400 Search Results

MSM5117400

Contextual Info: O K I Semiconductor MSM5117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESC R IPTIO N T he M SM 5117400 is a n ew gen eratio n d yn am ic org an ized as 4,194,304-word x 4-bit. T he technology used to fabricate the M SM 5 1 17400 is O K I's C M O S silicon gate process technology.

D-50

Abstract: MSM5117400 MSM5117400D MSM5117400D-50 MSM5117400D-60 MSM5117400D-70
Contextual Info: O K I Semiconductor This version:Apr,1999 M S M 5 1 1 7 4 0 0 P _ 4,194,304-W o rd x 4-B it D Y N A M IC RAM : FA ST PAGE M O D E TYPE D ESC R IP TIO N The MSM5117400D is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

Contextual Info: O K I Semiconductor MSC23840-XXBS20/DS20 8,388,608-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23840-xxBS20/DS20 is a fully decoded 8,388,608-word x 40-bit CMOS Dynamic Random Access Memory Module composed of twenty 16-Mb DRAMs in SOJ MSM5117400 packages mounted

Contextual Info: O K I Semiconductor MSM5 1 17400B_ E2G0035-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117400B achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSM5 1 17 4 0 0 A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400A is a 4,194,304-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117400A achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor T his version:A pr,1999 M S M 5 1 1 7 4 0 0 D_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400D is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117400D achieves high integration, high-speed operation, and low-power consumption

Contextual Info: O K I Semiconductor MSC23836-XXBS24/DS24 PirelSow:^^ 8,388,608-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23836-xxBS24/DS24 is a fully decoded 8,388,608-word x 36-bit CMOS Dynamic Random Access Memory Module composed of sixteen 16-Mb DRAMs in SOJ MSM5117400 packages and eight 4Mb DRAMs in SOJ (MSM514100B) packages mounted with twenty-four 0.2|j.F decoupling capacitors on a

Contextual Info: PEDD5117400F-01 1Semiconductor MSM5117400F This version: May. 2000 Previous version :  Preliminary 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

MSM5117400

Abstract: MSM5117400C
Contextual Info: J2G0108-18-42 作成：1998年 4月 ¡ 電子デバイス MSM5117400C l MSM5117400C 暫定 4,194,304-Wordx4-Bit DYNAMIC RAM：高速ページモード n 概要 MSM5117400CはCMOSプロセス技術を用いた4,194,304ワ−ド×4ビット構成のダイナミックランダム

Contextual Info: O K I Semiconductor MSM5 1 1 7 4 0 0 4,194,304-W ord x 4-B it DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM5117400 is OKI's CM OS silicon gate process technology.

MSM5117400

Abstract: MSM5117400C
Contextual Info: Pr E2G0108-18-42 el im y 4,194,304-Word ¥ 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400C is a 4,194,304-word ¥ 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117400C achieves high integration, high-speed operation, and low-power

MSM5117400

Abstract: MSM5117400B
Contextual Info: O K I Semiconductor MSM5 1 17400B_ E2G0035-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117400B achieves high integration, high-speed operation, and low-power

MSM5117400

Abstract: MSM5117400A
Contextual Info: O K I Sem iconductor MSM5 1 1 7 4 0 0 A_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400A is a 4,194,304-word x 4-bit dynam ic R A M fabricated in O K I's C M O S silicon gate technology. The MSM5117400A achieves high integration, high-speed operation, and low-power

FOHV265

Abstract: MSM5117400 MSM5117400D MSM5117400D-50 MSM5117400D-60 MSM5117400D-70
Contextual Info: Semiconductor 7KLV#YHUVLRQ=$SU14<<< MSM5117400D 4,194,304-Word u 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400D is a 4,194,304-word u 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS technology. The MSM5117400D achieves high integration, high-speed operation, and low-power consumption

TAA 981

Abstract: MSM5117400
Contextual Info: O K I Semiconductor MSM5 117400 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400 is a new generation dynamic organized as 4,194,304-word x 4-bit. The technology used to fabricate the MSM5117400 is OKI's CMOS silicon gate process technology.

Contextual Info: O K I Semiconductor MSC 23440-XXBS 10/DS10 Ptriïtoüinairf 4,194,304-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23440-xxBS10/DS10 is a fully decoded 4,194,304-word x 40-bit CMOS Dynamic Random Access Memory M odule composed of ten 16-Mb DRAMs in SOJ MSM5117400 packages m ounted with

Contextual Info: O K I Semiconductor MSC23436-XXBS12/DS12 PrtËÛKRDlniâirf 4,194,304-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI MSC23436-xxBS12/DS12 is a fully decoded 4,194,304-word x 36-bit CMOS Dynamic Random Access Memory Module composed of eight 16-Mb DRAMs in SOJ MSM5117400 packages and four 4-Mb

Contextual Info: O K I Semiconductor MSM5 1 17400 A 4,194,304-Word x 4-Bit D YNAM IC RAM : FAST PAGE M O DE TYPE D E S C R IP T IO N The MSM5117400A is a new generation dynam ic organized as 4,194,304-w ord x 4-bit. The technology used to fabricate the M SM 5117400A is O K I's C M O S silicon gate process technology.

MSM5117400F

Abstract: CA10 MSM5117400
Contextual Info: FEDD5117400F-01 1Semiconductor MSM5117400F This version: August. 2000 Previous version :  4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

CA10

Abstract: MSM5117400 MSM5117400F
Contextual Info: FEDD5117400F-01 1Semiconductor MSM5117400F This version: June. 2000 Previous version :  4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400F is a 4,194,304-word × 4-bit dynamic RAM fabricated in Oki’s silicon-gate CMOS

Contextual Info: O K I Semiconductor M SM 5117400A 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400A is a 4,194354-word x 4-bit dynamic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5117400A achieves high integration, high-speed operation, and low-power

Contextual Info: E2G0108-18-42 O K I Semiconductor svereion:Apr1998 MSM5 1 17400C_ 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400C is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117400C achieves high integration, high-speed operation, and low-power

Contextual Info: O K I Semiconductor MSC23432-xxBS8/DS8 4,194,304-Word by 32-Bit Dynamic RAM Module: Fast Page Mode DESCRIPTION The OKI MSC23432-xxBS8/DS8 is a fully d ecoded 4,194,304-word x 32-bit CM OS D ynam ic R andom Access M em ory M odule com posed of eight 16-Mb DRAMs in SOJ MSM5117400 packages m o u n ted w ith

Contextual Info: O K I Semiconductor MSC 23440-XXBS 10/DS10 iPrtUöMDüisiiry/ 4,194,304-Word by 40-Bit DRAM Module: Fast Page Mode DESCRIPTION The OKI M SC 23440-xxBS10/D S10 is a fully decoded 4,194,304-w ord x 40-bit CM OS Dynamic Random Access Memory M odule com posed of ten 16-Mb DRAM s in SOJ MSM5117400 packages mounted with