MSG4 Search Results

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG43003 SiGe HBT type For low-noise RF amplifier Unit: mm • Features 3 1 0.39+0.01 −0.03 1.00±0.05  Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open)

MSG43001

Contextual Info: Transistors MSG43001 SiGe HBT type For low-noise RF amplifier 3 • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package

MSG43003

Contextual Info: Transistors MSG43003 SiGe HBT type For low-noise RF amplifier Unit: mm • Features  Compatible between high breakdown voltage and high cutoff frequency  Low-noise, high-gain amplification  Suitable for high-density mounting and downsizing of the equipment for

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG430C4 SiGe HBT type For low-noise RF amplifier Unit: mm • Features  Compatible between high breakdown voltage and high cutoff frequency  Low-noise, high-gain amplification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG43001 SiGe HBT type For low-noise RF amplifier 3 • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 3 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin in r y r a av g fo ou n a o

MSG43004

Abstract: 5.5 GHz power amplifier
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 3 • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Optimal size reduction and high level integration for ultra-small packages

MSG430D4

Abstract: 5.5 GHz power amplifier
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG430D4 SiGe HBT type For low-noise RF amplifier Unit : mm • Features  Compatible between high breakdown voltage and high cutoff frequency  Low-noise, high-gain amplification

MSG430D4

Contextual Info: Transistors MSG430D4 SiGe HBT type For low-noise RF amplifier Unit : mm • Features  Compatible between high breakdown voltage and high cutoff frequency  Low-noise, high-gain amplification  Optimum for high-density mounting and downsizing of the equipment for

Contextual Info: Transistors MSG43003 SiGe HBT type For low-noise RF amplifier Unit: mm • Features  Compatible between high breakdown voltage and high cutoff frequency  Low-noise, high-gain amplification  Suitable for high-density mounting and downsizing of the equipment for

1015gp

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG43002 SiGe HBT type For low-noise RF amplifier 3 • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package

5.5 GHz power amplifier

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG430C4 SiGe HBT type For low-noise RF amplifier Unit: mm • Features  Compatible between high breakdown voltage and high cutoff frequency  Low-noise, high-gain amplification

MSG430C4

Contextual Info: Transistors MSG430C4 SiGe HBT type For low-noise RF amplifier Unit: mm • Features  Compatible between high breakdown voltage and high cutoff frequency  Low-noise, high-gain amplification  Optimum for high-density mounting and downsizing of the equipment for

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG430C4 SiGe HBT type For low-noise RF amplifier Unit: mm • Features 3 1 0.39+0.01 −0.03 1.00±0.05  Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open)

Contextual Info: Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 3 • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Optimal size reduction and high level integration for ultra-small packages 2

MSG43001

Contextual Info: Transistors MSG43001 SiGe HBT type For low-noise RF amplifier 3 • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package

MSG43002

Contextual Info: Transistors MSG43002 SiGe HBT type For low-noise RF amplifier 3 • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification • Suitable for high-density mounting and downsizing of the equipment for Ultraminiature leadless package

5.5 GHz power amplifier

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG43003 SiGe HBT type For low-noise RF amplifier Unit: mm • Features  Compatible between high breakdown voltage and high cutoff frequency  Low-noise, high-gain amplification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG43002 SiGe HBT type For low-noise RF amplifier 3 2 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin in r y r a av g fo ou n a o

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG43001 SiGe HBT type For low-noise RF amplifier 3 2 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b ur o iz is ro th u e n w er fo fo ot sin in r y r a av g fo ou n a o

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 3 • Compatible between high breakdown voltage and high cut-off frequency • Low noise, high-gain amplification • Optimal size reduction and high level integration for ultra-small packages

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG430D4 SiGe HBT type For low-noise RF amplifier Unit : mm • Features  Compatible between high breakdown voltage and high cutoff frequency  Low-noise, high-gain amplification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG43002 SiGe HBT type For low-noise RF amplifier 3 2 M Di ain sc te on na tin nc ue e/ d • Compatible between high breakdown voltage and high cutoff frequency • Low-noise, high-gain amplification

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors MSG430D4 SiGe HBT type For low-noise RF amplifier Unit : mm • Features 3 1 0.39+0.01 −0.03 1.00±0.05  Absolute Maximum Ratings Ta = 25°C Collector-base voltage (Emitter open)