MIL-STD-750
Abstract: CK6001 UPS835LE3 1038A UPS1040E3 plaskon thomas shear UPS840e3 SEC77 qualify
Text: SCO TT SD ALE DI VI SIO N MSC POWERMITE 3 Qualification Data Completion Date: July 7, 2005 Purpose: To qualify 1 Mfg Location (PSI Technologies) (2) New Molding Compound (CK6001) (3) Matte Sn Lead Finish Reliability test Test Method Conditions SS Rejects
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CK6001)
MIL-STD-750,
JESD22-A102-C
MSC/PCN-0002
UPS340e3
UPS835Le3
UPS360e3
UPS840e3
MIL-STD-750
CK6001
UPS835LE3
1038A
UPS1040E3
plaskon
thomas shear
UPS840e3
SEC77
qualify
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Motherboard dell precision 690
Abstract: aic-7880 RS6000 ibm 478 motherboard HP 9000 A500 Motherboard dell seagate logic board seagate hard disks seagate ST15150N Accelgraphics
Text: Pentium Pro Processor Workstation Performance Brief September 1996 Order Number: 242999-001 Pentium Pro Processor Workstation Performance Brief Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or
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com/r5000/R5000
Motherboard dell precision 690
aic-7880
RS6000
ibm 478 motherboard
HP 9000 A500
Motherboard dell
seagate logic board
seagate hard disks
seagate ST15150N
Accelgraphics
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PDF
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sun* sparcstation 20
Abstract: HP 9000 A500 Motherboard dell precision 690 Accelgraphics aic-7880 ansys TD-400 pentium pro memory management indigo mechanical engineering project
Text: Pentium Pro Processor Workstation Performance Brief June 1997 Order Number: 242999-003 Pentium Pro Processor Workstation Performance Brief Information in this document is provided in connection with Intel products. No license, express or implied, by estoppel or
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com/r5000/R5000
sun* sparcstation 20
HP 9000 A500
Motherboard dell precision 690
Accelgraphics
aic-7880
ansys
TD-400
pentium pro memory management
indigo
mechanical engineering project
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PDF
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1N7037
Abstract: msc ls1 1n7043CCT military part marking symbols jan
Text: 1N7037CCU1 Available on commercial versions SILICON DUAL SCHOTTKY POWER RECTIFIER 35 Amp, 100 Volt Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/730 DESCRIPTION This low-profile, Dual Schottky rectifier device is military qualified up to a JANTXV level for
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1N7037CCU1
MIL-PRF-19500/730
1N7037.
MIL-PRF-19500/730.
1N7037CCU1
T4-LDS-0235,
1N7037
msc ls1
1n7043CCT
military part marking symbols jan
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PDF
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Untitled
Abstract: No abstract text available
Text: MSiCSS05120 Compliant Silicon Carbide Schottky Power Rectifier 5A, 1200V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to
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MSiCSS05120
T4-LDS-0103-4,
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Untitled
Abstract: No abstract text available
Text: MSiCSS10120 Compliant Silicon Carbide Schottky Power Rectifier 10A, 1200V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to
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MSiCSS10120
T4-LDS-0107-3,
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PDF
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Untitled
Abstract: No abstract text available
Text: MSiCSS10060CC Compliant Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 600 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing
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MSiCSS10060CC
T4-LDS-0106-1,
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U4 Package
Abstract: No abstract text available
Text: MSiCSS05120 Compliant Silicon Carbide Schottky Power Rectifier 5A, 1200V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to
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MSiCSS05120
compliant2013
T4-LDS-0103-4,
U4 Package
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Untitled
Abstract: No abstract text available
Text: 1N6845U3 Compliant Qualified Levels: JAN, JANTX, and JANTXV 45 Volts, 30 Amp Schottky Rectifier Ceramic Surface Mount Qualified per MIL-PRF-19500/682 DESCRIPTION This low-profile 1N6845U3 Schottky rectifier device is military qualified up to a JANTXV level
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1N6845U3
MIL-PRF-19500/682
1N6845U3
1N6845.
MIL-PRF-19500/682.
T4-LDS-0128,
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PDF
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01071
Abstract: S10120
Text: MSiCSS10120CC Available Silicon Carbide Dual Schottky Power Rectifier 10A, 1200V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 1200 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing
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MSiCSS10120CC
O-257
MSiCSN10120CC
T4-LDS-0107-1,
01071
S10120
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PDF
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1n6844
Abstract: 1N6844U3
Text: 1N6844U3 Available on commercial versions SILICON SCHOTTKY POWER RECTIFIER 40 A, 100 V Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/679 DESCRIPTION This low-profile 1N6844U3 Schottky rectifier device is military qualified up to a JANTXV level
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1N6844U3
MIL-PRF-19500/679
1N6844.
MIL-PRF-19500/679.
1N6844U3
T4-LDS-0233,
1n6844
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PDF
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Untitled
Abstract: No abstract text available
Text: MSiCSS10120CC Available Silicon Carbide Dual Schottky Power Rectifier 10A, 1200V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 1200 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing
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MSiCSS10120CC
T4-LDS-0107-1,
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PDF
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Untitled
Abstract: No abstract text available
Text: MSiCSS05120CC Compliant Silicon Carbide Dual Schottky Power Rectifier 5A, 1200V DESCRIPTION These high current Silicon Carbide Schottkys are rated up to 1200 V and offer very fast switching capabilities with greater efficiency at higher operating temperatures compared to
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MSiCSS05120CC
T4-LDS-0103-1,
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PDF
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Untitled
Abstract: No abstract text available
Text: MSiCSS10060CC Compliant Silicon Carbide Dual Schottky Power Rectifier 10A, 600V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 600 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing
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MSiCSS10060CC
T4-LDS-0106-1,
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PDF
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|
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Untitled
Abstract: No abstract text available
Text: MSiCSS10120CC Available Silicon Carbide Dual Schottky Power Rectifier 10A, 1200V DESCRIPTION This high current Silicon Carbide Schottky is rated up to 1200 V and offers very fast switching capabilities with greater efficiency at higher operating temperatures compared to existing
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Original
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MSiCSS10120CC
T4-LDS-0107-1,
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N6845U3 Compliant Qualified Levels: JAN, JANTX, and JANTXV 45 Volts, 30 Amp Schottky Rectifier Ceramic Surface Mount Qualified per MIL-PRF-19500/682 DESCRIPTION This low-profile 1N6845U3 Schottky rectifier device is military qualified up to a JANTXV level
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1N6845U3
MIL-PRF-19500/682
1N6845U3
1N6845.
MIL-PRF-19500/682.
T4-LDS-0128,
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N6842U3 60 Volts, 10 Amp Dual Schottky Common Cathode Center Tap Rectifier Compliant Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/680 DESCRIPTION This low-profile 1N6842U3 Schottky rectifier device is military qualified up to a JANTXV level
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1N6842U3
MIL-PRF-19500/680
1N6842U3
1N6842
T4-LDS-0129,
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N7039CCU1 Silicon Dual Schottky Power Rectifier 35 Amp, 150 Volt Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/737 DESCRIPTION This Dual Schottky rectifier device is military qualified up to a JANTXV level for high-reliability
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1N7039CCU1
MIL-PRF-19500/737
1N7039
T4-LDS-0321-1,
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PDF
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Untitled
Abstract: No abstract text available
Text: 1N6842U3 60 Volts, 10 Amp Dual Schottky Common Cathode Center Tap Rectifier Compliant Qualified Levels: JAN, JANTX, and JANTXV Qualified per MIL-PRF-19500/680 DESCRIPTION This low-profile 1N6842U3 Schottky rectifier device is military qualified up to a JANTXV level
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1N6842U3
MIL-PRF-19500/680
1N6842U3
1N6842.
MIL-PRF-19500/680.
T4-LDS-0129,
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power
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2N5114UB
2N5116UB
MIL-PRF-19500
2N5114
2N5116
T4-LDS-0006-1,
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power
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2N5114UB
2N5116UB
MIL-PRF-19500
2N5114
2N5116
T4-LDS-0006-1,
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PDF
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2N2857UB
Abstract: No abstract text available
Text: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial
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2N2857UB
MIL-PRF-19500/343
2N2857.
T4-LDS-0223-1,
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N2857UB Available on commercial versions Qualified Levels: JAN, JANTX, and JANTXV RF and MICROWAVE DISCRETE LOW POWER TRANSISTORS Qualified per MIL-PRF-19500/343 DESCRIPTION The 2N2857UB is a military qualified silicon NPN transistor also available in commercial
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2N2857UB
MIL-PRF-19500/343
2N2857UB
2N2857.
T4-LDS-0223-1,
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PDF
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Untitled
Abstract: No abstract text available
Text: 2N5114UB thru 2N5116UB Screening in reference to MIL-PRF-19500 available P-CHANNEL J-FET Available on commercial versions DESCRIPTION This low-profile surface mount device is available in military equivalents for high-reliability applications. Microsemi also offers numerous other products to meet higher and lower power
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2N5114UB
2N5116UB
MIL-PRF-19500
2N5114
2N5116
MIL-PRF-19500
gr108
T4-LDS-0006-1,
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