Untitled
Abstract: No abstract text available
Text: BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Rev. 04 — 13 November 2007 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 2006 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets together with new contact
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BF904A;
BF904AR;
BF904AWR
BF904A
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BF1202WR
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF1202; BF1202R; BF1202WR N-channel dual-gate PoLo MOS-FETs Product specification Supersedes data of 2000 Mar 29 2010 Sep 16 NXP Semiconductors Product specification N-channel dual-gate PoLo MOS-FETs FEATURES BF1202; BF1202R; BF1202WR
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BF1202;
BF1202R;
BF1202WR
MSB035
BF1202R
R77/03/pp15
BF1202WR
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs Product specification 2003 Dec 16 NXP Semiconductors Product specification BF1211; BF1211R; BF1211WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer
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BF1211;
BF1211R;
BF1211WR
R77/01/pp16
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BFG403W
Abstract: radar front end
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG403W NPN 17 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 1998 Mar 11 NXP Semiconductors Product specification NPN 17 GHz wideband transistor BFG403W FEATURES PINNING • Low current PIN
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BFG403W
R77/04/pp13
BFG403W
radar front end
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BFG480W
Abstract: 1184 transistor analog transistor B 1184
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG480W NPN wideband transistor Product specification Supersedes data of 1998 Jul 09 1998 Oct 21 NXP Semiconductors Product specification NPN wideband transistor BFG480W FEATURES PINNING • High power gain PIN DESCRIPTION
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M3D124
BFG480W
MSB842
R77/03/pp16
BFG480W
1184 transistor analog
transistor B 1184
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transistor marking NEP ghz
Abstract: BF1105WR marking code NA BF1105 BF1105R MGM253 dual-gate
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Dec 01 1997 Dec 02 NXP Semiconductors Product specification BF1105; BF1105R; BF1105WR N-channel dual-gate MOS-FETs FEATURES
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BF1105;
BF1105R;
BF1105WR
MSB035
BF1105R
R77/03/pp15
transistor marking NEP ghz
BF1105WR
marking code NA
BF1105
MGM253
dual-gate
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BFG520W
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG520W BFG520W/X; BFG520W/XR NPN 9 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors August 1995 Philips Semiconductors Product specification BFG520W BFG520W/X; BFG520W/XR
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BFG520W
BFG520W/X;
BFG520W/XR
SCD33
123065/1500/02/pp16
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BGA2001 Silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Jan 12 Philips Semiconductors Objective specification Silicon MMIC amplifier BGA2001 FEATURES PINNING SOT343R • Low current, low voltage
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BGA2001
SCA57
127127/00/01/pp8
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS BGA2003 Silicon MMIC amplifier Objective specification File under Discrete Semiconductors, SC14 1998 Jan 13 Philips Semiconductors Objective specification Silicon MMIC amplifier BGA2003 FEATURES PINNING SOT343R • Low current PIN DESCRIPTION
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BGA2003
OT343R
BGA2003
SCA57
127127/00/01/pp8
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transistor K 2333
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS M3D124 BGA2001 silicon MMIC amplifier Preliminary specification 1999 Jan 04 Philips Semiconductors Preliminary specification silicon MMIC amplifier BGA2001 PINNING SOT343R FEATURES • Low current, low voltage PIN DESCRIPTION • Very high power gain
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M3D124
BGA2001
SCA60
budgetnum/printrun/ed/pp11
transistor K 2333
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"MARKING CODE P5"
Abstract: BFG425W
Text: DISCRETE SEMICONDUCTORS BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1997 Apr 16 File under Discrete Semiconductors, SC14 1997 Oct 28 Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES
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BFG425W
SCA55
127127/00/03/pp12
"MARKING CODE P5"
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG410W NPN 22 GHz wideband transistor Product specification Supersedes data of 1997 Oct 29 1998 Mar 11 NXP Semiconductors Product specification NPN 22 GHz wideband transistor BFG410W FEATURES PINNING • Very high power gain PIN
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BFG410W
R77/04/pp13
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BF1212R datasheet
Abstract: BF121 BF1212 BF1212R BF1212WR dual-gate marking CODE ML
Text: DISCRETE SEMICONDUCTORS DATA SHEET BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1212; BF1212R; BF1212WR FEATURES PINNING • Short channel transistor with high forward transfer
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BF1212;
BF1212R;
BF1212WR
SCA75
R77/02/pp15
BF1212R datasheet
BF121
BF1212
BF1212R
BF1212WR
dual-gate
marking CODE ML
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4 pin dual-emitter
Abstract: BFU510 RF TRANSISTOR 10GHZ RF TRANSISTOR 10GHZ low noise TRANSISTOR FOR 10GHz oscillator RF NPN power transistor 2.5GHz "MARKING CODE A4" 10GHz oscillator RF NPN POWER TRANSISTOR 2.5 GHZ RF POWER TRANSISTOR NPN
Text: DISCRETE SEMICONDUCTORS M3D124 BFU540 NPN SiGe wideband transistor Preliminary specification 2001 Nov 27 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU540 PINNING FEATURES • Very high power gain PIN • Very low noise figure
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M3D124
BFU540
SCA73
125104/00/04/pp12
4 pin dual-emitter
BFU510
RF TRANSISTOR 10GHZ
RF TRANSISTOR 10GHZ low noise
TRANSISTOR FOR 10GHz oscillator
RF NPN power transistor 2.5GHz
"MARKING CODE A4"
10GHz oscillator
RF NPN POWER TRANSISTOR 2.5 GHZ
RF POWER TRANSISTOR NPN
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"MARKING CODE P5"
Abstract: 03389 BFG425W
Text: DISCRETE SEMICONDUCTORS BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1997 Oct 28 File under Discrete Semiconductors, SC14 1998 Mar 11 Philips Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES
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BFG425W
SCA57
125104/00/04/pp12
"MARKING CODE P5"
03389
BFG425W
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MGM219
Abstract: 9335 895 BC817 BFG21W DCS1800 MGM224
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D124 BFG21W UHF power transistor Product specification Supersedes data of 1997 Nov 21 1998 Jul 06 NXP Semiconductors Product specification UHF power transistor BFG21W FEATURES PINNING • High power gain PIN High efficiency
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M3D124
BFG21W
DCS1800,
R77/03/pp11
MGM219
9335 895
BC817
BFG21W
DCS1800
MGM224
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BF1101WR
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 1999 May 14 NXP Semiconductors Product specification BF1101; BF1101R; BF1101WR N-channel dual-gate MOS-FETs FEATURES PINNING
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BF1101;
BF1101R;
BF1101WR
MSB035
BF1101R
R77/02/pp15
BF1101WR
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DUAL-GATE
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs Product specification 2003 Nov 14 NXP Semiconductors Product specification BF1212; BF1212R; BF1212WR N-channel dual-gate MOS-FETs FEATURES PINNING • Short channel transistor with high forward transfer
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BF1212;
BF1212R;
BF1212WR
R77/02/pp16
DUAL-GATE
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 July 24 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure
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M3D124
BFU510
BFU510
MSB842
125104/00/04/pp11
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ua 722 fc
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DATA SHEET BFG25AW BFG25AW/X; BFG25AW/XR NPN 5 GHz wideband transistor Product specification File under Discrete Semiconductors, SC14 Philips Semiconductors August 1995 Philips Semiconductors Product specification BFG25AW BFG25AW/X; BFG25AW/XR
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BFG25AW
BFG25AW/X;
BFG25AW/XR
OT343
OT343R
BFG25AW/X
ua 722 fc
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BFG425W
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BFG425W NPN 25 GHz wideband transistor Product specification Supersedes data of 1998 Mar 11 2010 Sep 15 NXP Semiconductors Product specification NPN 25 GHz wideband transistor BFG425W FEATURES PINNING • Very high power gain PIN
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BFG425W
R77/05/pp13
BFG425W
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BF1109
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs Product specification Supersedes data of 1997 Sep 03 1997 Dec 08 NXP Semiconductors Product specification BF1109; BF1109R; BF1109WR N-channel dual-gate MOS-FETs FEATURES PINNING
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BF1109;
BF1109R;
BF1109WR
MSB035
BF1109R
R77/02/pp15
BF1109
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10GHz oscillator
Abstract: 4 pin dual-emitter RF TRANSISTOR 10GHZ BFU510 RF TRANSISTOR 2.5 GHZ s parameter RCS9 "MARKING CODE A5*" 6 pins IC cbe LC marking code transistor RF NPN POWER TRANSISTOR 2.5 GHZ
Text: DISCRETE SEMICONDUCTORS M3D124 BFU510 NPN SiGe wideband transistor Preliminary specification 2001 Nov 08 Philips Semiconductors Preliminary specification NPN SiGe wideband transistor BFU510 PINNING FEATURES • Very high power gain PIN • Very low noise figure
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M3D124
BFU510
SCA73
125104/00/04/pp12
10GHz oscillator
4 pin dual-emitter
RF TRANSISTOR 10GHZ
BFU510
RF TRANSISTOR 2.5 GHZ s parameter
RCS9
"MARKING CODE A5*"
6 pins IC cbe
LC marking code transistor
RF NPN POWER TRANSISTOR 2.5 GHZ
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marking CODE MH
Abstract: PHILIPS dual gate mosfets transistor 1G1
Text: DISCRETE SEMICONDUCTORS BF904A; BF904AR; BF904AWR N-channel dual gate MOS-FETs Product specification Supersedes data of 1999 Feb 01 Philips Sem iconductors 1999 May 14 PHILIPS Philips Semiconductors Product specification N-channel dual gate MOS-FETs BF904A; BF904AR; BF904AWR
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OCR Scan
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BF904A;
BF904AR;
BF904AWR
BF904AWR
MSB014
BF904A
SCA64
125004/00/03/pp16
marking CODE MH
PHILIPS dual gate mosfets
transistor 1G1
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