MSA08 Search Results

M30800FCFP

Abstract: m16c 20MHZ
Contextual Info: 20MHz M30800FCFP M16C/80 StarterKit BOARD MSA0801

MAR-8SM

Abstract: WW107
Contextual Info: Surface Mount Monolithic Amplifier 50Ω MAR-8SM+ DC to 1000 MHz Features • wideband, DC to 1000 MHz • exact footprint substitute for Avago’s MSA-0886 • very high gain, 32.5 dB at 100 MHz CASE STYLE: WW107-1 PRICE: $1.32 ea. QTY. 30 + RoHS compliant in accordance

MAR8

Abstract: MMIC MAR-8 MAR-8A TB-432-8A MSA-0885 VV105 WW107 MCL MAR-8
Contextual Info: Drop-In Monolithic Amplifier DC-1 GHz Features • Exact foot print substitute* MAR-8 and MSA-0885 • High gain, 31.5 dB at 0.1 GHz, reduces component count • High power output, +12.5 dBm typ. • Low noise • Improved stability • Protection against power supply transients

HP MMIC INA

Abstract: mmic distributed amplifier INA-10386 mps 0736 mmic ina MSA-0404 low noise amplifier ghz amplifier TRANSISTOR 12 GHZ MSA-0520 gaas Low Noise Amplifier
Contextual Info: HP RFIC and MMIC Amplifiers Field Values 20-Nov-97 DocPDF DocName Title Subject Author Keywords pdf_docs\amps\00_FRON Hewlett-Packard A Leader in T\I_III.PDF Components Hewlett-Packard A Leader in Components pdf_docs\amps\00_FRON Alphanumeric Index T\VII_XII.PDF

Contextual Info: data sheet «W 8 1992 0A V A N T E K MSA-0886 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers September, 1989 Avantek 86 Plastic Package Features • • • • • .020 Usable Gain to 5.5 GHz High Gain: 32.5 dB typical at 0.1 GHz

Contextual Info: Oavantek MSA-0886 M O D A M P C ascadable S ilic o n B ip o la r M o n o lith ic M icrow ave Integrated C irc u it A m p lifie rs Avantek 86 Plastic Package Features • • • • • Usable Gain to 5.5 GHz High Gain: 32.5 dB typical at 0.1 GHz 22.5 dB typical at 1.0 GHz

Contextual Info: T h a l HEWLETT PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0885 Features • Usable Gain to 6.0 GHz • High Gain: 32.5 dB Typical at 0.1 GHz 22.5 dB Typical at 1.0 GHz • Low Noise Figure: 3.3 dB Typical at 1.0 GHz • Low Cost Plastic Package

Contextual Info: What H E W L E T T * mLliM PACKARD Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0885 Features • Usable Gain to 6.0 GHz • High Gain: 3 2.5 dB Typical at 0.1 GHz 2 2 .5 dBTypicalat 1.0 GHz • Low Noise Figure: 3.3 dBTypicalat 1.0 GHz • Low Cost Plastic Package

MSA-0866

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Exact footprint substitute for MAR-8SM and MSA-0886a,b Benefits: • lower device voltage, 3.7 typ. • lower power dissipation in the MMIC • may eliminate need for choke RFC • High gain, 31.5 dB at 0.1GHz, reduces component count

k2645

Abstract: k4005 U664B mosfet k4005 MB8719 transistor mosfet k4004 SN16880N stk5392 STR451 BC417
Contextual Info: 1 BHIAB Electronics Du som söker besvärliga IC & transistorer, börja Ditt sökande hos oss – vi har fler typer på lager än man rimlingen kan begära av ett företag Denna utgåva visar lagerartiklar men tyvärr saknas priser och viss information Men uppdatering sker kontinuerligt

Contextual Info: HEULETT-PACKARD/ CMPNTS blE ]> • Wam HEW LETT 4447534 Q Q i Q i n 72a H H P A MSA-0800 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers mlEM PACKARD Chip Outline1 Features • Usable Gain to 6.0 GHz • High Gain: 32.5 dB typical at 0.1 GHz

Contextual Info: H E W L E T T —P A C K A R D / C M P N T S HEW LETT PACKARD m LIE D • 4447564 DD1D127 ATM H H P A MSA-0886 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Features 86 Plastic Package • • 0.51 0.020 • •

Contextual Info: Surface Mount Monolithic Amplifier DC-1 GHz Product Features • Exact footprint substitute* MAR-8SM and MSA-0886 • High gain, 31.5 dB at 0.1GHz, reduces component count • High power output, +12.5 dBm typ. • Internally Matched to 50 Ohms • Low noise

MMIC MAR-8

Abstract: MAR-8A MSA-08 MCL MAR-8
Contextual Info: Drop-In Monolithic Amplifier DC-1 GHz Features • Exact foot print substitute* MAR-8 and MSA-0885 • High gain, 31.5 dB at 0.1 GHz, reduces component count • Internally Matched to 50 Ohms • High power output, +12.5 dBm typ. • Low noise • Improved stability

MSA-08XX

Abstract: Frequency Multipliers x5 hsmp-3822 x5 frequency multiplier comb generator pin diode microstrip HSMP-3820 Dielectric Resonator Oscillator DRO frequency multiplier X3 "Step Recovery Diode"
Contextual Info: Low Cost Frequency Multipliers Using Surface Mount PIN Diodes Application Note 1054 Introduction PIN switching diodes with low values of transition time can multiply frequencies up to C-band similar to step recovery diodes SRD . These diodes are available in the low-cost SOT-23 package. Several

AN-S002

Abstract: AN-S013 5091 AN-S001 MGA-64135 GaAS MMIC Assembly and Handling Guidelines MSA1104 msa-0520 POWER AMPLIFIERS CIRCUIT DIAGRAMS TRANSIMPEDANCE mmic
Contextual Info: Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest HewlettPackard authorized distributor or representative. Technical information is also available on the WWW at: www.hp.com/go/rf

TRANSISTOR 0835

Abstract: AVANTEK MSA-0835 S2112 AVANTEK transistor
Contextual Info: Q avan tek MSA-0835 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Avantek 35 micro-X Package1 Features • • • • Usable Gain to 6.0 GHz High Gain: 32.5 dB typical at 0.1 GHz 23.0 dB typical at 1 .0 GHz Low Noise Figure: 3.0 dB typical at 1.0 GHz

MSA-0885

Abstract: MSA0885
Contextual Info: Using External Feedback to Achieve Flat Gain with the MSA-0885 Application Note S006 Introduction One of the classic problems facing the microwave designer is to build a cascadable amplification stage having flat power gain over a broad frequency range. The difficulties arise from the gain vs frequency

Contextual Info: m H EW LE TT MSA-0886 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Am plifiers PACKARD Features 86 Plastic Package • Usable Gain to 5.5 GHz • High Gain: 32.5 dB typical at 0.1 GHz 22.5 dB typical at 1.0 GHz • Low Noise Figure: 3.3 dB typical at 1.0 GHz

Contextual Info: W hìì H EW L E T T fttfifl P A C K A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0800 Features • U sable G ain to 6.0 GHz • High Gain: 32.5 dB Typical at 0.1 GHz 23.5 dB Typical at 1.0 GHz • Low Noise Figure: 3.0 dB Typical at 1.0 GHz

MMIC sot-363

Abstract: msa0304 Micro-X Ceramic msa-0835 MSA0270
Contextual Info: warn H E W L E T T f t x f l PACKARD RFIC and MMIC Amplifiers Selection Guides Fixed Gain RFIC Amplifiers in order from lowest to highest frequency Part Number Type Frequency NF Range (GHz) (dB) Gain P ldB (dB) (dBm) MSA-2111 MSA-3111 MSA-3135 MSA-3185 MSA-3186

Contextual Info: ^ HEW LETT PA CK A R D Cascadable Silicon Bipolar MMIC Amplifier Technical Data MSA-0870 Features • U sable Gain to 6.0 GHz • High Gain: 32.5 dB Typical at 0.1 GHz 23.5 dB Topical at 1.0 GHz • Low N o ise Figure: 3.0 dB Typical at 1.0 GHz • H erm etic Gold-ceram ic

RW mmic

Contextual Info: H EW LETT PACKARD MSA-0800 MODAMP Cascadable Silicon Bipolar Monolithic Microwave Integrated Circuit Amplifiers Chip Outline1 Features • • • Usable Gain to 6.0 GHz High Gain: 32.5 dB typical at 0.1 GHz 23.5 dB typical at 1.0 GHz Low Noise Figure:

AN-S002

Abstract: 5091-9054E AN-S014 AN-S011
Contextual Info: f ï J l HEW LETT '1 1 PACKARD “KM Applications The application notes represented by these abstracts are available from your local Hewlett-Packard sales office or nearest HewlettPackard authorized distributor or representative. Technical information is also available on the WWW at: