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    MRFE6VP5600HR6 Search Results

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    MRFE6VP5600HR6 Price and Stock

    NXP Semiconductors MRFE6VP5600HR6

    RF MOSFET LDMOS 50V NI1230
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    DigiKey MRFE6VP5600HR6 Cut Tape 81 1
    • 1 $206.84
    • 10 $176.583
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    MRFE6VP5600HR6 Digi-Reel 81 1
    • 1 $206.84
    • 10 $176.583
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    MRFE6VP5600HR6 Reel 150
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    Avnet Americas MRFE6VP5600HR6 Reel 10 Weeks 150
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    • 1000 $145.6752
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    Mouser Electronics MRFE6VP5600HR6 142
    • 1 $188.4
    • 10 $169.66
    • 100 $159.23
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    Verical MRFE6VP5600HR6 550 1
    • 1 $195.8
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    MRFE6VP5600HR6 109 1
    • 1 $160
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    MRFE6VP5600HR6 83 1
    • 1 $164.21
    • 10 $160.95
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    MRFE6VP5600HR6 50 1
    • 1 $195.8
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    MRFE6VP5600HR6 6 1
    • 1 $195.8
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    Arrow Electronics MRFE6VP5600HR6 Cut Strips 83 10 Weeks 1
    • 1 $164.21
    • 10 $160.95
    • 100 $157.69
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    Newark MRFE6VP5600HR6 Reel 150
    • 1 $146.85
    • 10 $146.85
    • 100 $146.85
    • 1000 $139.81
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    MRFE6VP5600HR6 Cut Tape 1
    • 1 $151.4
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    Future Electronics MRFE6VP5600HR6 Reel 10 Weeks 150
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    Richardson RFPD MRFE6VP5600HR6 921 1
    • 1 $178.85
    • 10 $171.19
    • 100 $161.5
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    Avnet Silica MRFE6VP5600HR6 12 Weeks 150
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    Chip1Stop MRFE6VP5600HR6 Cut Tape 129
    • 1 $127
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    EBV Elektronik MRFE6VP5600HR6 150 12 Weeks 150
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    Win Source Electronics MRFE6VP5600HR6 134
    • 1 $147.827
    • 10 $128.116
    • 100 $128.116
    • 1000 $128.116
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    NXP Semiconductors MRFE6VP5600HR5

    RF MOSFET Transistors VHV6 600W 50V NI1230H
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    Mouser Electronics MRFE6VP5600HR5 14
    • 1 $194.73
    • 10 $171.29
    • 100 $161.05
    • 1000 $161.05
    • 10000 $161.05
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    MRFE6VP5600HR6 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRFE6VP5600HR6 NXP Semiconductors FET RF 2CH 130V 230MHZ NI1230 Original PDF

    MRFE6VP5600HR6 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 1, 1/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs MRFE6VP5600HR6 MRFE6VP5600HSR6 These high ruggedness devices are designed for use in high VSWR industrial


    Original     		PDF MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 MRFE6VP5600HR6

    mrfe6vp5600hs

    Abstract: MRFE6VP5600H
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 0, 12/2010 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 mrfe6vp5600hs MRFE6VP5600H

    MMZ20363B

    Abstract: NONLINEAR MODEL LDMOS MMZ25333B MRFE6VP6300 Product Selector Guide
    Text: RF Products Selector Guide freescale.com/RF RF Product Selector Guide Freescale is the global leader in RF transistors for power amplifiers, the most trusted source of RF solutions for more than 30 years. Freescale offers RF solutions for most communication and industrial applications serving wireless


    Original     		PDF

    BGU7073

    Abstract: BGU7072 Infineon Power Management Selection Guide 2011 toshiba car audio catalog 2015 BAP50-03 spice model BB 804 varicap diode MOSFET TOSHIBA 2015 RF MANUAL 19TH EDITION RF MANUAL blf188
    Text: RF MANUAL 19TH EDITION www.nxp.com www.nxp.com Application and design manual for High Performance RF products 2015 NXP Semiconductors N.V. All rights reserved. Reproduction in whole or in part is prohibited without the prior written consent of the is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by


    Original     		PDF

    MRFE6VP5600H

    Abstract: MRFE6VP MRFE6VP5600HR6 mrfe6vp5600hs UT141C ATC100B390J ad255 UT-141C J530 UT-141C-25
    Text: Freescale Semiconductor Technical Data Document Number: MRFE6VP5600H Rev. 1, 1/2011 RF Power Field Effect Transistors High Ruggedness N-Channel Enhancement-Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial including laser and plasma exciters , broadcast (analog and digital), aerospace


    Original     		PDF MRFE6VP5600H MRFE6VP5600HR6 MRFE6VP5600HSR6 MRFE6VP5600H MRFE6VP mrfe6vp5600hs UT141C ATC100B390J ad255 UT-141C J530 UT-141C-25