MRF559 V Search Results

MRF559 V Result Highlights (5)

Part	Manufacturer	Description
LM2917MX/NOPB	Texas Instruments	Frequency to Voltage Converter 14-SOIC -40 to 85
LM2907MX/NOPB	Texas Instruments	Frequency to Voltage Converter 14-SOIC -40 to 85
LM2917M/NOPB	Texas Instruments	Frequency to Voltage Converter 14-SOIC -40 to 85
LM2907M/NOPB	Texas Instruments	Frequency to Voltage Converter 14-SOIC -40 to 85
LM2917N-8/NOPB	Texas Instruments	Frequency to Voltage Converter 8-PDIP -40 to 85

MRF559 V Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
motorola MRF559 Abstract: mrf559 transistor mrf559d J368 mw 137 MRF559 transistor J306 mrf559 v J9018 j353 transistor Text: MOTOROLA Order this document by MRF559/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF559 . . . designed for UHF linear and large–signal amplifier applications. • Specified 12.5 Volt, 870 MHz Characteristics — Output Power = 0.5 Watts	Original	MRF559/D MRF559 motorola MRF559 mrf559 transistor mrf559d J368 mw 137 MRF559 transistor J306 mrf559 v J9018 j353 transistor	PDF
mrf559 v Abstract: MRf559 mrf555 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB	Original	MRF559 2N5109 MRF5943C 2N4427 MRF4427, MRF559 mrf559 v mrf555	PDF
MRF555T Abstract: MRF559 2N5109 BFR90 transistor BFR96 mrf559 v mrf5812 equivalent transistor bfr96 2N3866A 2N4427 Text: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package	Original	MRF559 MRF559G 150eneral MRF555T MRF559 2N5109 BFR90 transistor BFR96 mrf559 v mrf5812 equivalent transistor bfr96 2N3866A 2N4427	PDF
MRF559 Abstract: mrf559 v 2N5179 2N6255 2N3866A 2N4427 MRF4427 MRF553 MRF607 MSC1317 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB	Original	MRF559 2N5109 2N4427 MRF4427, MSC1317 MRF559 mrf559 v 2N5179 2N6255 2N3866A 2N4427 MRF4427 MRF553 MRF607	PDF
MRF559 Abstract: No abstract text available Text: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Improved Solderability	Original	MRF559 MRF545 MRF544 MRF559	PDF
MRF559 Abstract: No abstract text available Text: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package Electroless Tin Plated Leads for Improved Solderability	Original	MRF559 MRF559 3-20-0erves	PDF
MRF559 Abstract: No abstract text available Text: MRF559 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF559G * G Denotes RoHS Complaint, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = .5 W Minimum Gain = 8.0 dB Efficiency 50% Cost Effective Macro X Package	Original	MRF559 MRF559G MRF559	PDF
Untitled Abstract: No abstract text available Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF559 The RF Line 0 .5 W — 8 7 0 M H z HIG H FREQUENCY TR A N SISTO R N P N S IL IC O N H IG H F R E Q U E N C Y T R A N S IS T O R N P N S IL IC O N . d e s ig n e d fo r U H F lin e a r a n d la rg e - s ig n a l a m p lifie r a p p lic a tio n s .	OCR Scan	MRF559	PDF
MRF553T Abstract: MRF517 Text: MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB typ @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA • Broadband Noise Figure = 7.5 dB @ 50mA, 300 MHz	Original	MRF517 To-39 MRF545 MRF544 MRF553T MRF517	PDF
j353 Abstract: transistor j353 j353 transistor MRF559 TRANSISTOR J408 j361 MHW808 Text: MOTOROLA •I SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency TVansistor . . . designed for UHF linear and large-signal amplifier applications. • 0.5 W, 870 MHz HIGH-FREQUENCY TRANSISTOR NPN SILICON Specified 12.5 Volt, 870 MHz Characteristics —	OCR Scan	MHW808 IS22I MRF559 j353 transistor j353 j353 transistor TRANSISTOR J408 j361 MHW808	PDF
s-parameter 2N3866A Abstract: mrf571 S-parameter 2N5179 Text: MRF4427, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available Gain – 20dB typ @ 200MHz	Original	MRF4427, MRF3866 200MHz MRF545 MRF544 s-parameter 2N3866A mrf571 S-parameter 2N5179	PDF
2N3866 Abstract: Transistor 2N3866 RF 2N3866 2n3866a 2N3866 application note 2N3866 equivalent mrf555 BFR91 parameter S data 2n3866 low cost BFR90 transistor Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics	Original	2N3866 2N3866A To-39 28Vdc BFR90 MRF545 MRF544 2N3866/2N3866A Transistor 2N3866 RF 2N3866 2n3866a 2N3866 application note 2N3866 equivalent mrf555 BFR91 parameter S data 2n3866 low cost BFR90 transistor	PDF
MRF517 Abstract: VK200 mrf559 mrf559 vk200 nf c4 npn MRF5812 RF Transistor Selection 2N4427 2N5179 2N6255 MRF4427 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product @ 60mA	Original	MRF517 To-39 MRF517 MRF4427, 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 VK200 mrf559 mrf559 vk200 nf c4 npn MRF5812 RF Transistor Selection 2N4427 2N5179 2N6255 MRF4427	PDF
RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ Abstract: RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2N5109 RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 2n3866 2N3866 application note RF NPN POWER TRANSISTOR 2.5 GHZ S-parameter 2N5179 Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •	Original	2N5109 To-39 2N3866A MRF559 MRF904 MRF5943C 2N4427 MRF4427, RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ 2N5109 RF NPN POWER TRANSISTOR C 10-12 GHZ transistor BFR91 2n3866 2N3866 application note RF NPN POWER TRANSISTOR 2.5 GHZ S-parameter 2N5179	PDF

2N4427 Abstract: 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF555 MRF5943C MRF607 Text: MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	MRF555 MRF4427, 2N4427 MRF553 MRF553T MRF607 2N6255 2N5179 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF555 MRF5943C MRF607	PDF
Untitled Abstract: No abstract text available Text: MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	MRF555 MRF545 MRF544	PDF
2N4427 Abstract: 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF557 MRF5943C MRF607 Text: MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	MRF557 MRF951 MRF571 BFR91 BFR90 MRF545 MRF544 2N4427 2N5109 2N5179 2N6255 MRF4427 MRF553 MRF557 MRF5943C MRF607	PDF
S-parameter 2N5179 Abstract: s-parameter 2N3866A s-parameter 2N2857 s-parameter 2N4427 2N5179 2N3866A 2N4427 2N6255 MRF3866 MRF4427 Text: MRF4427, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available Gain – 20dB typ @ 200MHz	Original	MRF4427, MRF3866 200MHz MRF559 MRF904 MRF4427 S-parameter 2N5179 s-parameter 2N3866A s-parameter 2N2857 s-parameter 2N4427 2N5179 2N3866A 2N4427 2N6255 MRF3866	PDF
2N4427 equivalent bfr91 Abstract: 13 6 npn 2N4427 equivalent transistor bfr96 transistor BFR91 2N5109 2N5179 BFR90 transistor BFR96 mrf5812 equivalent Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB	Original	MRF555 BFR90 MRF545 MRF544 MSC1316 2N4427 equivalent bfr91 13 6 npn 2N4427 equivalent transistor bfr96 transistor BFR91 2N5109 2N5179 BFR90 transistor BFR96 mrf5812 equivalent	PDF
Untitled Abstract: No abstract text available Text: MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB Efficiency 60% Typ Cost Effective PowerMacro Package Electroless Tin Plated Leads for Improved Solderability	Original	MRF557 MRF545 MRF544	PDF
mrf571 Abstract: 2N3866 Text: 2N3866 / 2N3866A RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • Silicon NPN, To-39 packaged VHF/UHF Transistor Specified 400 MHz, 28Vdc Characteristics - Output Power = 1.0 Watt - Minimum Gain = 10 dB - Efficiency = 45% 800 MHz Current-Gain Bandwidth Product	Original	2N3866 2N3866A To-39 28Vdc MRF545 MRF544 mrf571	PDF
Untitled Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB	Original	MRF557	PDF
mrf555 Abstract: No abstract text available Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11.5 dB	Original	MRF553 BFR91 BFR90 MRF545 MRF544 MRF553 mrf555	PDF
2N5109 Abstract: transistor 2N5109 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ for transistor bfr96 2n5109 transistor Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •	Original	2N5109 To-39 Volta12, 2N3866A MRF559 MRF904 MRF5943C 2N4427 MRF4427, 2N5109 transistor 2N5109 RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ for transistor bfr96 2n5109 transistor	PDF

MRF559 V Search Results

MRF559 V Result Highlights (5)

MRF559 V Datasheets Context Search

motorola MRF559

mrf559 v

MRF555T

MRF559

MRF559

MRF559

MRF559

Untitled

MRF553T

j353

s-parameter 2N3866A

2N3866

MRF517

RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ

2N4427

Untitled

2N4427

S-parameter 2N5179

2N4427 equivalent bfr91

Untitled

mrf571

Untitled

mrf555

2N5109