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    Microsemi Corporation MRF3866

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    MRF3866 Datasheets (9)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MRF3866 Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    MRF3866 Advanced Semiconductor NPN SILICON RF TRANSISTOR Original PDF
    MRF3866 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    MRF3866 Motorola HIGH-FREQUENCY TRANSISTORS NPN SILICON Original PDF
    MRF3866 Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF
    MRF3866G Advanced Power Technology RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Original PDF
    MRF3866R1 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    MRF3866R2 Microsemi RF & MICROWAVE DISCRETE LOW POWER TRANSISTOR Original PDF
    MRF3866R2 Motorola NPN Silicon High Frequency Transistor Original PDF

    MRF3866 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    s-parameter 2N4427

    Abstract: S-parameter 2N5179 RF 2N3866 s-parameter 2N3866 s-parameter bfr91 s-parameter transistor 2N4427 2n3866 mrf559 v 2N4427 2N5179
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF3866, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available


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    PDF MRF3866, BFR90 MRF545 MRF544 MSC1312 MRF559 MRF904 s-parameter 2N4427 S-parameter 2N5179 RF 2N3866 s-parameter 2N3866 s-parameter bfr91 s-parameter transistor 2N4427 2n3866 mrf559 v 2N4427 2N5179

    mrf3866

    Abstract: s-parameter 2N4427
    Text: MRF3866, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17 dB @ 300 MHz SO-8 R1 suffix–Tape and Reel, 500 units


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    PDF MRF3866, MRF544 mrf3866 s-parameter 2N4427

    MRF3866

    Abstract: No abstract text available
    Text: MRF3866 NPN SILICON RF TRANSISTOR DESCRIPTION: PACKAGE STYLE The ASI MRF3866 is Designed for General Purpose Amplifier and Oscillator Applications. MAXIMUM RATINGS IC 400 mA VCE 30 V VCB 55 V VEB 3.5 V PDISS 1.0 W @ TC = 100 °C TJ -55 °C to +150 °C TSTG


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    PDF MRF3866 MRF3866

    MRF586

    Abstract: mrf571 2N4427 2N5109 2N5179 2N6255 MRF3866 MRF3866G MRF4427 MRF553
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF3866, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF3866G, R1, R2 * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • Low Cost SO-8 Plastic Surface Mount Package.


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    PDF MRF3866, MRF3866G, MRF586 mrf571 2N4427 2N5109 2N5179 2N6255 MRF3866 MRF3866G MRF4427 MRF553

    S-parameter 2N5179

    Abstract: s-parameter 2N3866A s-parameter 2N2857 s-parameter 2N4427 2N5179 2N3866A 2N4427 2N6255 MRF3866 MRF4427
    Text: MRF4427, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available Gain – 20dB typ @ 200MHz


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    PDF MRF4427, MRF3866 200MHz MRF559 MRF904 MRF4427 S-parameter 2N5179 s-parameter 2N3866A s-parameter 2N2857 s-parameter 2N4427 2N5179 2N3866A 2N4427 2N6255 MRF3866

    s-parameter 2N3866A

    Abstract: mrf571 S-parameter 2N5179
    Text: MRF4427, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available Gain – 20dB typ @ 200MHz


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    PDF MRF4427, MRF3866 200MHz MRF545 MRF544 s-parameter 2N3866A mrf571 S-parameter 2N5179

    s-parameter 2N5109

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF3866, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available


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    PDF MRF3866, Data00 s-parameter 2N5109

    MPS3866

    Abstract: MRF3866R2
    Text: MOTOROLA Order this document by MPS3866/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MPS3866 MRF3866R2 • Tape and reel packaging options available for MRF3866R2: R2 suffix = 2,500 units per reel IC = 400 mA HIGH–FREQUENCY


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    PDF MPS3866/D MPS3866 MRF3866R2 MRF3866R2: MPS3866 MPS3866/D* MRF3866R2

    MPS3866

    Abstract: MRF3866R2
    Text: MOTOROLA Order this document by MRF3866/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF3866R2 • Tape and reel packaging available for MRF3866R2: R2 suffix = 2,500 units per reel IC = 400 mA HIGH–FREQUENCY TRANSISTORS


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    PDF MRF3866/D MRF3866R2: MRF3866R2 MRF3866R2 MRF3866/D MPS3866

    MRF3866R1

    Abstract: 2n2857 common base amplifier
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF3866, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available


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    PDF MRF3866, MRF545 MRF544 MRF3866 MRF559 MRF904 MRF3866R1 2n2857 common base amplifier

    MPS3866

    Abstract: mrf3866r2
    Text: MOTOROLA Order this document by MRF3866/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor MRF3866R2 • Tape and reel packaging available for MRF3866R2: R2 suffix = 2,500 units per reel IC = 400 mA HIGH–FREQUENCY TRANSISTORS


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    PDF MRF3866/D MRF3866R2 MRF3866R2: MPS3866 mrf3866r2

    Untitled

    Abstract: No abstract text available
    Text: MRF4427, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Low Voltage Version of MRF3866 • Maximum Available Gain – 20dB typ @ 200MHz


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    PDF MRF4427, MRF3866 200MHz MRF4427

    MRF581G

    Abstract: MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581
    Text: MRF581 MRF581G MRF581A MRF581AG *G Denotes RoHS Compliant, Pb free Terminal Finish RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • Low Noise - 2.5 dB @ 500 MHZ Gain at Optimum Noise Figure = 15.5 dB @ 500 MHz Ftau - 5.0 GHz @ 10v, 75mA


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    PDF MRF581 MRF581G MRF581A MRF581AG 2N6255 2N5179 MRF581G MRF581AG MRF581A s-parameter 2N3866A 2N4427 MRF4427 MRF553 MRF581

    MHW707-2

    Abstract: MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861
    Text: RF Products In Brief . . . While Motorola is considered to be the supermarket for semiconductor products, there is not a category in which the selection is more diverse, or more complete, than in products designed for RF system applications. From MOS, bipolar


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    PDF 714U/1 MHLW8000 MHW707-2 MHW707-1 MRF947T1 equivalent mhw704 CR2428 MHW591 MHW592 MHW593 MHW707 MRF861

    MRF586

    Abstract: MRF517 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF517 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • Gpe = 10 dB (typ) @ 60 mA, 300 MHz • 3 GHz Current-Gain Bandwidth Product (min) @ 60mA


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    PDF MRF517 To-39 MRF571 BFR91 BFR90 MRF545 MRF544 MRF517 MRF586 low cost BFR90 transistor 2n2857 UHF transistor common base amplifier 2n5179 bfr90 equivalent BFR91 transistor BFR96 RF POWER TRANSISTOR NPN MRF904

    BFR91 transistor

    Abstract: 2N5109 BFR90 transistor BFR91 BFR96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent MRF586 transistor bfr96
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF557 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 870 MHz Characteristics Output Power = 1.5 W Minimum Gain = 8 dB


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    PDF MRF557 BFR90 MRF545 MRF544 MRF557 BFR91 transistor 2N5109 BFR90 transistor BFR91 BFR96 datasheet for transistor bfr96 mrf559 v mrf5812 equivalent MRF586 transistor bfr96

    RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ

    Abstract: RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5109 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 2N5109 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Silicon NPN, To-39 packaged VHF/UHF Transistor • 1.2 GHz Current-Gain Bandwidth Product @ 50mA •


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    PDF 2N5109 To-39 2N5109 MRF559 MRF4427, 2N4427 MRF553 MRF553T MRF607 RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 1 WATT 2.4 GHZ RF NPN POWER TRANSISTOR 10 WATT 2.4 GHZ 2N5179 2N3866A 2N4427 2N6255 MRF4427 MRF553

    MRF553G

    Abstract: 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF553 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS MRF553G * G Denotes RoHS Compliant, Pb Free Terminal Finish Features • • • • • • Specified @ 12.5 V, 175 MHz Characteristics


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    PDF MRF553 MRF553G MRF553G 1N4148 diode 2N5179 mrf544 1N4148 2N4427 2N5109 2N6255 MRF4427 MRF553

    s-parameter 2N4427

    Abstract: S-parameter 2N5179 BFR91
    Text: MRF5943, R1, R2 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • Low Cost SO-8 Plastic Surface Mount Package. • S-Parameter Characterization • Tape and Reel Packaging Options Available • Maximum Available Gain = 17dB @ 300MHz SO-8 R1 suffix–Tape and Reel, 500 units


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    PDF MRF5943, 300MHz TempeMRF545 MRF544 s-parameter 2N4427 S-parameter 2N5179 BFR91

    Untitled

    Abstract: No abstract text available
    Text: 140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: 215 631-9840 FAX: (215) 631-9855 MRF555 RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS Features • • • • • • Specified @ 12.5 V, 470 MHz Characteristics Output Power = 1.5 W Minimum Gain = 11 dB


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    PDF MRF555 MRF545 MRF544 MSC1316

    Untitled

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor • Tape and reel packaging available for MRF3866R2: R2 suffix = 2,500 units per reel lc = 400 mA HIGH-FREQUENCY TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage


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    PDF MRF3866R2: MRF3866R2 MRF38G6R2

    NPN transistor mhz s-parameter

    Abstract: MRF3866
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF3866 The RF Line NPN Silicon High-Frequency TVansistor . . . designed for amplifier and oscillator applications in industrial equipment construted with surface mount components. • Low Cost SORF Plastic Surface Mount Package


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    PDF MRF3866 MRF3866 NPN transistor mhz s-parameter

    MPS3866

    Abstract: transistor 3866 s t 3866 transistor
    Text: M O TO R O LA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon H igh-Frequency Transistor • MPS3866 MRF3866R2 Tape and reel packaging options available for MRF3866R2: R2 suffix = 2,500 units per reel lc = 400 m A H IG H -F R E Q U E N C Y T R A N S IS T O R S


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    PDF MRF3866R2: MPS3866 MRF3866R2 MRF3866R2 transistor 3866 s t 3866 transistor

    Motorola Zc 34

    Abstract: 10C2-C
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon High-Frequency Transistor • MRF3866R2 Tape and reel packaging available for MRF3866R2: R2 suffix = 2,500 units per reel lc = 400 mA HIGH-FREQUENCY TRANSISTORS NPN SILICON MAXIMUM RATINGS Rating


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    PDF MRF3866R2: MRF3866R2 MRF3866R2 Motorola Zc 34 10C2-C