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    MR826 EQUIVALENT Search Results

    MR826 EQUIVALENT Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TMP89FS60BFG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1414-0.80-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS63BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP52-1010-0.65-002 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS62BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP44-1010-0.80-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FS60BUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/P-LQFP64-1010-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMP89FM82DUG Toshiba Electronic Devices & Storage Corporation 8-bit Microcontroller/Processing Performance Equivalent to a 16-bit MCU/LQFP48-P-0707-0.50D Visit Toshiba Electronic Devices & Storage Corporation

    MR826 EQUIVALENT Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    MJE13005L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-Q NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005-Q QW-R221-027 MJE13005L PDF

    equivalent mje13005

    Abstract: mje13005 MJE13005L
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 „ These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 O-126 O-220 O-220F MJE13005L QW-R203-018 equivalent mje13005 mje13005 MJE13005L PDF

    MJE13005H

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-H NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005-H QW-R221-024 MJE13005H PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  1 FEATURES TO-220F TO-251 1 1 TO-263 TO-252 APPLICATIONS * Switching regulator’s, inverters * Motor controls * Solenoid/Relay drivers * Deflection circuits 


    Original     		MJE13005 O-220F O-251 O-263 O-252 O-220 O-262 QW-R203-018. PDF

    2n2222 h parameter values

    Abstract: equivalent mje13005 transistor mje13005 to 126 equivalent transistor 2N2905 mje13005 Power Transistors TO-126 Case N-P-N SILICON POWER TRANSISTORS TO-126
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 O-126 O-263 O-220 O-220F QW-R203-018 2n2222 h parameter values equivalent mje13005 transistor mje13005 to 126 equivalent transistor 2N2905 mje13005 Power Transistors TO-126 Case N-P-N SILICON POWER TRANSISTORS TO-126 PDF

    equivalent mje13005

    Abstract: 2N2222 transistor curve 2N2222 SOA 2N2222 transistor output curve
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 O-220F QW-R219-001 equivalent mje13005 2N2222 transistor curve 2N2222 SOA 2N2222 transistor output curve PDF

    equivalent mje13005

    Abstract: Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 MJE13005L-x-T60-K QW-R203-018 equivalent mje13005 Ferroxcube core 2N2222 curve mje13005 equivalent equivalent transistor 2N2905 MR826 equivalent circuit based on MJE13005 MJE13005 transistor mje13005 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005-K QW-R203-045 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005-K NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005-K QW-R203-045 PDF

    transistor mje13005 TO-126

    Abstract: to-126 transistor case
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 QW-R203-018. transistor mje13005 TO-126 to-126 transistor case PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS  DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 QW-R203-018. PDF

    equivalent mje13005

    Abstract: 2N2222 transistor output curve transistor mje13005 mje13005 equivalent
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 O-220 QW-R203-018 equivalent mje13005 2N2222 transistor output curve transistor mje13005 mje13005 equivalent PDF

    equivalent mje13005

    Abstract: 1N4933 equivalent
    Text: UTC MJE13005 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 O-220 QW-R203-018 equivalent mje13005 1N4933 equivalent PDF

    MJE5742 equivalent

    Abstract: 2n222 TRANSISTOR MJE5742 MJE20 mje5740 2N2905 transistor 1N493
    Text: ON Semiconductor MJE5740 MJE5742 * NPN Silicon Power Darlington Transistors The MJE5740 and MJE5742 Darlington transistors are designed for high−voltage power switching in inductive circuits. They are particularly suited for operation in applications such as:


    Original     		MJE5740 MJE5742 MJE5742 MJE5742 equivalent 2n222 TRANSISTOR MJE20 2N2905 transistor 1N493 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13002 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER RANSISTORS The UTC MJE13002 designed for use in high–volatge,high speed,power switching in inductive circuit, It is particularly suited for 115 and 220V switchmode applications such as switching


    Original     		MJE13002 O-126 QW-R204-014 PDF

    mje13003 equivalent

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 QW-R201-062 mje13003 equivalent PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE .


    Original     		MJE13003 290ns O-126 MJE13003L QW-R204-004 PDF

    Untitled

    Abstract: No abstract text available
    Text: UTC MJE13003 NPN EPITAXIAL SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V


    Original     		MJE13003 QW-R201-062 PDF

    equivalent mje13005

    Abstract: circuit based on MJE13005 MJE13005L-TA3-T transistor B c167 MJE13005-TA3-T MJE13005-TF3-T MJE210 MR826 1N4933 MJE13005
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13005 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS 1 DESCRIPTION These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220 V SWITCHMODE.


    Original     		MJE13005 O-220 O-220F MJE13005L QW-R203-018 equivalent mje13005 circuit based on MJE13005 MJE13005L-TA3-T transistor B c167 MJE13005-TA3-T MJE13005-TF3-T MJE210 MR826 1N4933 MJE13005 PDF

    equivalent mje13003

    Abstract: mje13003 equivalent MJE13003-X-T60-F-K MJE13003 TO-92 MJE13003G Transistor 2N2222 NPN TO92 OF transistor 2N2222 to-92
    Text: UNISONIC TECHNOLOGIES CO., LTD MJE13003 NPN SILICON TRANSISTOR NPN SILICON POWER TRANSISTORS „ DESCRIPTION These devices are designed for high–voltage, high–speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and 220V SWITCHMODE.


    Original     		MJE13003 290ns MJE13003L MJE13003G MJE13003L-x-T60-A-K MJE13003L-x-T60-F-lues QW-R204-004 equivalent mje13003 mje13003 equivalent MJE13003-X-T60-F-K MJE13003 TO-92 MJE13003G Transistor 2N2222 NPN TO92 OF transistor 2N2222 to-92 PDF

    r821 diodes

    Abstract: MR826 diode CR72 mr826 MR821 MR826 equivalent diode sg 5 ts MR822 mr820 motorola
    Text: MOTOROLA SC DIODES/OPTO b4E b3b7S5S D OQflbmM TET •MOT? MR820 MR821 MR822 MR824 MR826 MOTOROLA SEMICONDUCTOR TECHNICAL DATA MR822 and MR826 are Motorola Preferred Devices D o s ì ì ì 'i u m -s D a t a S h e e t FAST RECOVERY POWER RECTIFIERS SUBMINIATURE SIZE, AXIAL LEAD MOUNTED


    OCR Scan     		MR820 MR821 MR822 MR824 MR826 MR826 r821 diodes MR826 diode CR72 MR826 equivalent diode sg 5 ts mr820 motorola PDF

    MR822

    Abstract: mr821 MR826 MR824 A JR 3221 MR826 equivalent
    Text: M MR820 MR821MR822 MR824 MR826 M O T O R O L A S U B M IN IA T U R E SIZE, A X IA L LEAD M O UNTED FAST REC O V ER Y POWER R E C TIF IE R S FAST REC OVERY POWER R E C TIF IE R S . . . designed f o r special a p p lic a tio n s such as d c p o w e r supplies,


    OCR Scan     		MR820 MR821MR822 MR824 MR826 MR822 mr821 MR826 A JR 3221 MR826 equivalent PDF

    RECTIFIER DIODES Motorola mr 820

    Abstract: diode p6000 MR826 equivalent diode p6000 j MR821 MR822 MR826 p6000 diode Variac MR826 diode
    Text: MR820,MR821,MR822, MR824.MR826 D a t a S h e e t FA S T R E C O V E R Y POWER R E C T IF IE R S SU BM IN IA TU R E S IZ E , A X IA L L E A D MOUNTED FA S T R E C O V E R Y POWER R E C T IF IE R S 50-600 V O LTS 5.0 A M PERES . . . designed for special applications such as dc power supplies,


    OCR Scan     		MR820 MR821 MR822, MR824 MR826 MR821n RECTIFIER DIODES Motorola mr 820 diode p6000 MR826 equivalent diode p6000 j MR822 MR826 p6000 diode Variac MR826 diode PDF

    je5740

    Abstract: MJES740 Ferroxcube core MR826 diode JE5741 MJE5742* equivalent JE57
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE5740 M JE5741* M JE 5742* NPN Silicon Power Darlington Transistors ‘Motorola Pr#f*rr#d Dovte* The MJE5740, 41, 42 Darlington transistors are designed for high-voltage power switching in inductive circuits. They are particularly suited for operation in applications


    OCR Scan     		MJE5740, JE5740 JE5741* fUE574 1-----UE574 MJES740 Ferroxcube core MR826 diode JE5741 MJE5742* equivalent JE57 PDF