MPS8050 Search Results

mps8050

Abstract: B5G1 MPS805 DM07S
Contextual Info: MPS8050 _ National Discrete POW ER & Signal Technologies S em icon ducto r" MPS8050 NPN General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum Ratings*

MPS8050

Abstract: MPS8550
Contextual Info: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A ᴌComplementary to MPS8050. N MAXIMUM RATING Ta=25ᴱ UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V VEBO -6 V Collector Current

Contextual Info: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE ・Complementary to MPS8050. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO

MPS8550

Abstract: MPS8050
Contextual Info: SEMICONDUCTOR TECHNICAL DATA MPS8550 EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE • Complementary to MPS8050. MAXIMUM RATINGS Ta=25°C CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage V CBO -40 V Collector-Emitter Voltage VCEO

MPS8050

Abstract: CBVK741B019 F63TNR PN2222N
Contextual Info: MPS8050 MPS8050 C B TO-92 E NPN General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

mps8050

Abstract: MPS8550
Contextual Info: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A ᴌComplementary to MPS8550. N MAXIMUM RATING Ta=25ᴱ UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V VEBO 6 V Collector Current

semiconductor mps 8050 d

Abstract: MPS 8050 D MPS 8050 B K MPS 8050 hFE 8050 K MPS 8050 c C 8050 d kmps8050 K MPS 8050 d Korea Electronics
Contextual Info: SEMICONDUCTOR MPS8050 MARKING SPECIFICATION TO-92 PACKAGE 1. Marking method Laser Marking 2. Marking K MPS 8050 B 801 No. 1 Description K KEC 2 KOREA ELECTRONICS CO.,LTD. MPS Series Name 8050 Device Name B,C,D Device Name 3 99.05.20 4 hFE Grade B 5 Lot No.

mps8050

Abstract: MPS8550
Contextual Info: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A Complementary to MPS8550. N MAXIMUM RATING Ta=25 E K G SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V H

Contextual Info: SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE 2009. 6. 10 Revision No : 2 1/2

Contextual Info: MPS8050 NPN General Purpose Amplifier This device is designed for general purpose audio am plifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum Rdtinys T A = 2 5 ° C unless o th e rw ise noted Parameter Symbol Value

mps8050

Contextual Info: MPS8050 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

Contextual Info: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B FEATURE C A ・Complementary to MPS8050. N K MAXIMUM RATING Ta=25℃ E G RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage

MPS8050

Abstract: MPS8550
Contextual Info: SEMICONDUCTOR MPS8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE B C A Complementary to MPS8050. N MAXIMUM RATING Ta=25 E K G SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V

MPS8050S

Abstract: MPS8550S
Contextual Info: SEMICONDUCTOR MPS8050S TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. E B L Complementary to MPS8550S. L SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 25 V Emitter-Base Voltage VEBO 6 V IC 1.5

s 8050

Contextual Info: S E M IC O N D U C T O R ^ MPS8050 NPN General Purpose Amplifier This device is designed for general purpose audio am plifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum RatiriQS Symbol T A = 2 5 0C unless o th e rw ise noted

SC-10-100

Abstract: MPS8050C MPS8050 ps8050
Contextual Info: Discrete POWER & Signal Technologies s s M : n o w o „, r r a f ï MPS8050 NPN General Purpose Amplifier This device is designed for general purpose audio am plifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Msximum RdtinÇjS

MPS8050

Abstract: MPS8550
Contextual Info: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE • Complementary to MPS8550. MAXIMUM RATINGS Ta=25°C SYMBOL RATING UNIT Collector-Base Voltage V CBO 40 V Collector-Emitter Voltage V CEO 25 V Em itter-B ase Voltage

MPS8550S

Abstract: MPS8050S
Contextual Info: SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E B L L D ・Complementary to MPS8050S. 3 H G A 2 1 MAXIMUM RATING Ta=25℃ Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage

Contextual Info: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE ・Complementary to MPS8550. MAXIMUM RATING Ta=25℃ CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO

Contextual Info: SEMICONDUCTOR MPS8050 TECHNICAL DATA EPITAXIAL PLANAR NPN TRANSISTOR HIGH CURRENT APPLICATION. FEATURE 2010. 6. 10 Revision No : 3 1/2

Contextual Info: MPS8050 C TO-92 BE NPN General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Parameter

MPS8050

Abstract: MPS8050C
Contextual Info: MPS8050 MPS8050 C B TO-92 E NPN General Purpose Amplifier This device is designed for general purpose audio amplifier applications at collector currents to 500 mA. Sourced from Process 30. Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted

MPS8050S

Abstract: MPS8550S
Contextual Info: SEMICONDUCTOR MPS8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. E B L Complementary to MPS8050S. L SYMBOL RATING UNIT Collector-Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter-Base Voltage VEBO -6 V IC

alternator diode 1776 B

Abstract: 2az marking transistor sot-23 SMD SOT23 transistor MARK Y2 ic mb4213 NEC 12F triac F10P048 ktc3114 equivalent SMD TRANSISTOR MARKING 02N DIODE PJ 57 ss14 BC517 equivalent
Contextual Info: Transistors Transistors Diodes Diodes Thyristors Thyristors SAW SAW Device Device Dielectric Dielectric Device Device Integrated Integrated Circuit Circuit Table of Contents Index 5 SMD Transistors Line-up PNP Transistors Transistors Line-up (NPN Transistors)