HP RF TRANSISTOR GUIDE
Abstract: MRF286 MRF210305 MHL9838 mrf284 Curtice linear amplifier 470-860 Base Station Drivers motorola MRF High frequency MRF transistor
Text: SG384/D REV 7 RF LDMOS Infrastructure Technology Selector Guide Motorola RF LDMOS Product Family As digital standards increasingly dominate the wireless communication market, Motorola’s RF LDMOS technology has become the industry’s technology of choice due to its superior linearity, gain and efficiency characteristics. Motorola’s RF LDMOS
|
Original
|
PDF
|
SG384/D
HP RF TRANSISTOR GUIDE
MRF286
MRF210305
MHL9838
mrf284
Curtice
linear amplifier 470-860
Base Station Drivers
motorola MRF
High frequency MRF transistor
|
MRF184
Abstract: transistor 955 MOTOROLA smd-transistor DATA BOOK MRF6522-10 AN1670 RO4003 SMD TRANSISTOR smd J225 Nippon capacitors
Text: MOTOROLA Freescale Semiconductor, Inc. SEMICONDUCTOR APPLICATION NOTE Order this document by AN1670/D AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France
|
Original
|
PDF
|
AN1670/D
AN1670
MRF184
transistor 955 MOTOROLA
smd-transistor DATA BOOK
MRF6522-10
AN1670
RO4003
SMD TRANSISTOR
smd J225
Nippon capacitors
|
MRF873
Abstract: j30 124 transistor 150 watt amplifier advantages and disadvantages MRF650 transistor j334 AN1526 motorola rf book transistor j326 power semiconductor 1973 Nippon capacitors
Text: MOTOROLA Order this document by AN1526/D SEMICONDUCTOR APPLICATION NOTE RF Power Device Impedances: Practical Considerations AN1526 Prepared by: Alan Wood and Bob Davidson Motorola Semiconductor Products Sector ABSTRACT The definition of large–signal series equivalent input and
|
Original
|
PDF
|
AN1526/D
AN1526
AN1526/D*
MRF873
j30 124 transistor
150 watt amplifier advantages and disadvantages
MRF650
transistor j334
AN1526
motorola rf book
transistor j326
power semiconductor 1973
Nippon capacitors
|
500 watts amplifier schematic diagram pcb layout
Abstract: 500 watts amplifier schematic diagram 400 watts amplifier circuit diagram with specific j327 transistor PCB Rogers RO4003 substrate smd transistor JJ m30 smd TRANSISTOR transistor RF 98 smd computherm SMD Transistor
Text: MOTOROLA Order this document by AN1670/D SEMICONDUCTOR APPLICATION NOTE AN1670 60 Watts, GSM 900 MHz, LDMOS Two-Stage Amplifier Prepared by: Jean–Jacques Bouny Principal Staff Engineer Motorola Semiconductors S.A. Toulouse, France INTRODUCTION This application note demonstrates the feasibility of a
|
Original
|
PDF
|
AN1670/D
AN1670
500 watts amplifier schematic diagram pcb layout
500 watts amplifier schematic diagram
400 watts amplifier circuit diagram with specific
j327 transistor
PCB Rogers RO4003 substrate
smd transistor JJ
m30 smd TRANSISTOR
transistor RF 98 smd
computherm
SMD Transistor
|
Motorola transistors MRF646
Abstract: 100 watt hf transistor 12 volt Motorola transistors MRF648 vhf linear pulse power amplifier "Good RF Construction Practices and Techniques" 32 pins qfn 5x5 footprint transistor BR 471 A 4 bit dac MOTOROLA SELECTION mrf150 linear amplifier 470-860
Text: Selector Guide WIRELESS RF PRODUCT SELECTOR GUIDE SG46/D Rev. 25 9/2003 wireless Wireless RF Product Selector Guide Offering a broad portfolio of RF products, Motorola serves both the wireless infrastructure and subscriber markets. Motorola RF Solutions is the leader in RF technology—today
|
Original
|
PDF
|
SG46/D
Motorola transistors MRF646
100 watt hf transistor 12 volt
Motorola transistors MRF648
vhf linear pulse power amplifier
"Good RF Construction Practices and Techniques"
32 pins qfn 5x5 footprint
transistor BR 471 A
4 bit dac
MOTOROLA SELECTION mrf150
linear amplifier 470-860
|
MRF9130
Abstract: MRF9030L MRF9060 MRF9135LSR3
Text: Chapter Five Motorola RF Transistors – Data Sheets Device Number Page Number Device Number Page Number MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5–3 MRF9080LSR3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
|
Original
|
PDF
|
MBC13900
MRF281SR1
MRF281ZR1
MRF5S21150R3
MRF5S21150S
MRF5S21150SR3
MRF5P21180
MRF21180
MRF21180S
MRFG35003M6T1
MRF9130
MRF9030L
MRF9060
MRF9135LSR3
|
2060 d
Abstract: No abstract text available
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6S21140H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors Freescale Semiconductor, Inc. MRF6S21140HR3 N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21140HSR3
|
Original
|
PDF
|
MRF6S21140H/D
MRF6S21140HR3
MRF6S21140HSR3
MRF6S21140H/D
2060 d
|
Untitled
Abstract: No abstract text available
Text: Section Two Motorola RF Transistors – Data Sheets Device Number Page Number Device Number Page Number MBC13900 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–3 MRF9085 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–181
|
Original
|
PDF
|
MBC13900
MRF281SR1
MRF281ZR1
MRF282SR1
MRF282ZR1
MRF284
MRF284SR1
MRF21090S
MRF21120
MRF21120S
|
A114
Abstract: A115 AN1955 JESD22 MRF6S19100HR3 MRF6S19100HSR3 T491C106K050AS
Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF6S19100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF6S19100HR3 Freescale Semiconductor, Inc. N - Channel Enhancement - Mode Lateral MOSFETs MRF6S19100HSR3
|
Original
|
PDF
|
MRF6S19100H/D
MRF6S19100HR3
MRF6S19100HSR3
MRF6S19100HR3
A114
A115
AN1955
JESD22
MRF6S19100HSR3
T491C106K050AS
|
MRF181SR1
Abstract: No abstract text available
Text: Section Two Motorola RF Discrete Transistors – Data Sheets Device Number Page Number Device Number Page Number MRF134 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–3 MRF373 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5.2–258
|
Original
|
PDF
|
MRF134
MRF136
MRF141
MRF141G
MRF148A
MRF150
MRF151
MRF21090
MRF21090S
MRF21120
MRF181SR1
|
case 244-04
Abstract: z3c8
Text: MOTOROLA Order this document by MRF652/D SEMICONDUCTOR TECHNICAL DATA MRF652 Designed for 12.5 Vdc UHF large–signal, amplifier applications in industrial and commercial FM equipment operating to 512 MHz. • Guaranteed 12.5 Volt, 512 MHz Characteristics
|
Original
|
PDF
|
MRF652/D
MRF652
MRF652
MRF652/D
MRF652/D*
case 244-04
z3c8
|
MRF6S21100H
Abstract: AN1955 CDR33BX104AKWS MRF6S21100HR3 MRF6S21100HSR3
Text: MOTOROLA Order this document by MRF6S21100H/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF6S21100HR3 N - Channel Enhancement - Mode Lateral MOSFETs Designed for W - CDMA base station applications with frequencies from 2110
|
Original
|
PDF
|
MRF6S21100H/D
MRF6S21100HR3
MRF6S21100HR3
MRF6S21100HSR3
MRF6S21100H
AN1955
CDR33BX104AKWS
MRF6S21100HSR3
|
MRF644
Abstract: TRANSISTOR Z4 VK200 MOTOROLA 381 equivalent
Text: MOTOROLA Order this document by MRF644/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF644 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
|
Original
|
PDF
|
MRF644/D
MRF644
MRF644/D*
MRF644
TRANSISTOR Z4
VK200
MOTOROLA 381 equivalent
|
MRF641
Abstract: 104B
Text: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
|
Original
|
PDF
|
MRF641/D
MRF641
MRF641/D*
MRF641
104B
|
|
mrf641
Abstract: 1117 ADC
Text: MOTOROLA Order this document by MRF641/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF641 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
|
Original
|
PDF
|
MRF641/D
MRF641
mrf641
1117 ADC
|
MRF654
Abstract: MOTOROLA POWER TRANSISTOR motorola rf Power Transistor motorola 4 mhz transistor Z6 MOTOROLA TRANSISTOR 726 mrf6541
Text: MOTOROLA Order this document by MRF654/D SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power Transistor MRF654 . . . designed for 12.5 Volt UHF large–signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz.
|
Original
|
PDF
|
MRF654/D
MRF654
MRF654/D*
MRF654
MOTOROLA POWER TRANSISTOR
motorola rf Power Transistor
motorola 4 mhz
transistor Z6
MOTOROLA TRANSISTOR 726
mrf6541
|
MRF604
Abstract: MRF-604 MM531
Text: MOTOROLA SC XSTRS/R F MbE D b3b?2SM 00^4004 MOTOROLA G T -3 -ä -c e . • SEMICONDUCTOR TECHNICAL DATA MRF604 The R F Line 1.0 W - 175 M H z NPN SILICON RF POWER TRANSISTOR RF POWER TRANSISTOR NPN SILICON . . . designed for 12.5 Volt VH F large-signal amplifier applications
|
OCR Scan
|
PDF
|
MRF604
175MHz)
MRF604
MRF-604
MM531
|
MRF6604HXV
Abstract: MRF660 2N6603 mrf6603 Transistors c-3229
Text: MOTOROLA SC XSTRS/R F 4bE T> b3b72S4 O G ^ E S 2 «nOTb T -3 1 - MOTOROLA SEMICONDUCTOR! TECHNICAL DATA MRF6603HXV MRF6604HXV NPN Silicon RF, Small-Signal Transistors DMO inmi Discrete Military Operation . . .designed fo r use in h igh-gain, low -noise, sm a ll-sig n a l, narrow and w ideband a m p lifie rs .
|
OCR Scan
|
PDF
|
b3b72S4
MRF6603HXV
MRF6604HXV
2N6603
MRF6603
MRF6604
MRF660
Transistors c-3229
|
8002 1028
Abstract: MRF69 mrf6985
Text: MOTOROLA SC XSTRS/R F m = E fe.3t.72SH t> 0012527 1 « 1 1 0 T b 7^ 33'fO MOTOROLA SEMICONDUCTOR TECHNICAL DATA Discrete M ilitary Products MRF6985 M RF6986 DM0 Suffixes: m in i IMPN S ilic o n P u sh -P u ll RF P o w e r T ra n sisto rs HX, HXV Processed per
|
OCR Scan
|
PDF
|
MRF6985
RF6986
MIL-S-19500/RFP
O-116)
8002 1028
MRF69
|
MRF515
Abstract: motorola MRF515 radiosonde motorola MRF627 MRF905 MRF626
Text: MOTOROLA SC C DIODES/OPTO} 34 DE |L.3t>75S5 003fi0Tl 1 34t 3 8 t m 3 6367255 MOTOROLA SC DIODES/OPTO ° SILICON RF TRANSISTOR DICE (continued) MRFC515 DIE NO. — NPN LINE SOURCE — RF502.83 This die provides performance equal to or better than that of
|
OCR Scan
|
PDF
|
003fi0Tl
RF502
MRF515
MRF626
MRF627
MRF905
MRFC515
0V/100
motorola MRF515
radiosonde
motorola MRF627
MRF905
|
MRF630 MOTOROLA
Abstract: Transistor MRF630 mrf630 motorola transistor 912
Text: MOTOROLA SC XSTRS/R F MbE D b 3b ?2 S 4 OQTMfilS T •MOTb MOTOROLA SEM ICO N D U CTO R TECHNICAL DATA MRF630 The RF Line 3.0 W 470 MHz R F PO W ER T R A N S IS T O R N P N SILIC O N NPN SILICON RF POW ER TRANSISTOR . . . desig n ed for 12.5 Volt U H F large-signal, am plifier applications
|
OCR Scan
|
PDF
|
MRF630
b3b72S4
MRF630 MOTOROLA
Transistor MRF630
mrf630
motorola transistor 912
|
bf433
Abstract: RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ baw 92 HP11606A RF NPN POWER TRANSISTOR 2 WATT 2 GHZ 110T MRF5812 SF-11N transistor 81 110 w 63 MRF68
Text: MOTOROLA SC XSTR S/R F MbE » • b3b?ES4 OQTSGS^ *1 I noTb MOTOROLA SEMICONDUCTOR TECHNICAL DATA Th« RF Line NPN Silico n RF Low Pow er Transistor 'European Part Number lc - 200 mA SURFACE MOUNT HIGH FREQUENCY TRANSISTOR NPN SILICON . . . designed for high current, low power amplifiers up to 2 GHz.
|
OCR Scan
|
PDF
|
MRF681
bf433
RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ
baw 92
HP11606A
RF NPN POWER TRANSISTOR 2 WATT 2 GHZ
110T
MRF5812
SF-11N
transistor 81 110 w 63
MRF68
|
RF607
Abstract: k 2715
Text: MOTOROLA SC XSTRS/R Mb E F D b3fe.72S4 GQTMf l Ob MOTOROLA TECHNICAL DATA ¡nOTb 3 5 -C Ä » T • SEM ICO N D U CTO R 4 MRF607 T h e R F L in e 1.75 W — 175 M H z NPN SILICON R F POWER T R AN SISTO R R F POWER T RAN SISTO R NPN SILICON .d e s ig n e d fo r am plifier, frequency m ultiplier, o r oscillato r ap
|
OCR Scan
|
PDF
|
MRF607
RF607
k 2715
|
1206 transistor
Abstract: chip resistor 1206 smd transistor p1 bd135 equivalent RF NPN POWER TRANSISTOR 3 GHZ 200 watts 22 pf trimmer capacitor transistor bd135 8 PIN SMD IC 2671 Equivalent
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Line NPN Silicon RF Power TVansistor The MRF6406 is designed for 1.88 GHz Personal Communications Network PCN base station applications. For ease of design, this transistor has an internally matched input. •
|
OCR Scan
|
PDF
|
MRF6406
1206 transistor
chip resistor 1206
smd transistor p1
bd135 equivalent
RF NPN POWER TRANSISTOR 3 GHZ 200 watts
22 pf trimmer capacitor
transistor bd135
8 PIN SMD IC 2671 Equivalent
|