D3289
Abstract: No abstract text available
Text: MPC185UM 12/2003 Rev. 2.3 A I CE T T A O D N UT Y O H R IT A W E IN NG Co-Processor MPC185 Security M HA User’s Manual I L C E TO R T C P JE B U S HOW TO REACH US: USA/EUROPE/LOCATIONS NOT LISTED: Motorola Literature Distribution P.O. Box 5405, Denver, Colorado 80217
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MPC185UM
MPC185
D3289
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JF18006
Abstract: No abstract text available
Text: O rder this data sheet by M JE18006/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18006 M JF18006 Designer’s Data Sheet SWITCHMODE™ Motorola Preferred Devices NPN Bipolar Pow er Hransistor For S w itching Pow er Supply A pplications The M JE/M JF18006 have an applications specific state-of-the-art die designed for use
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JE18006/D
JF18006
O-220
O-220
MJF18006,
221D0AB
221D-01
221D-02.
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JE243
Abstract: JE253 je 243 Transistor 834
Text: MOTOROLA Order this document by MJE243/D SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors M JE 243* . . . designed for low power audio amplifier and low -current, high-speed switching applications. M JE 253* • • • • •
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MJE243/D
MJE243,
MJE253
O-225AA
JE243
JE253
je 243
Transistor 834
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Untitled
Abstract: No abstract text available
Text: MOTOROLA Order this document by MJE18002/D SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18002* M JF 18002* SWITCH MODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications ‘ Motorola Preferred Device POWER TRANSISTOR
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MJE18002/D
MJE/MJF18002
221D-02
E69369
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transistor m 1104
Abstract: je210 MJE200
Text: MOTOROLA Order this document by MJE200/D SEMICONDUCTOR TECHNICAL DATA Com plem entary Silicon Power Plastic Transistors NPN M JE 200* PNP M JE 210* . . . designed for low voltage, low-power, high—gain audio amplifier applications. • • • • • C ollector-Em itter Sustaining Voltage —
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MJE200/D
O-225AA
transistor m 1104
je210
MJE200
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 16002* M JE 16004* D esigner’s Data Sheet SWITCHMODE Series NPN Silicon Power Transistors ‘ Motorola Preferred D*vte* T h e se tra n sisto rs a re d e s ig n e d fo r h ig h -v o lta g e , h ig h -s p e e d s w itc h in g o f in d u c tiv e
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P-6042
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JF18004
Abstract: MOTOROLA JF18004 JE18004 MJF18004
Text: Order this data sheet by M JE18004/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18004 M JF18004 Designer’s Data Sheet SWITCHMODE™ Motorola Preferred Devices NPN Bipolar Power Transistor For Sw itching Pow er Supply Applications The MJE/MJF18004 have an applications specific state-of-the-art die designed for use
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JE18004/D
MJE/MJF18004
2PHX25388C-4
MJE18004/D
JF18004
MOTOROLA JF18004
JE18004
MJF18004
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e13009
Abstract: E13009 TRANSISTOR equivalent 4000w audio amplifier JE-I3009 4000w inverter circuit 4000w power amplifier equivalent of transistor mje13007 mje13009 equivalent 125VDC to 24 VDC regulator circuit Motorola Bipolar Power Transistor Data
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 13005* Designer’s Data Sheet "Motorola Preferred Device SWITCHMODE Series NPN Silicon Power Transistors These devices are designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. They are particularly suited for 115 and
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MJE13005*
e13009
E13009 TRANSISTOR equivalent
4000w audio amplifier
JE-I3009
4000w inverter circuit
4000w power amplifier
equivalent of transistor mje13007
mje13009 equivalent
125VDC to 24 VDC regulator circuit
Motorola Bipolar Power Transistor Data
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F18002
Abstract: 3704 transistor WE VQE 11 E Motorola Bipolar Power Transistor Data FR 3708 e180 MJF18002 221A-06 221D MJE18002
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Designer’s Data Sheet SW ITCHMODE™ M JE 18002* M JF18002* NPN Bipolar Power Transistor For Switching Power Supply Applications 'M otorola Preferred Dsvlce POWER TRANSISTOR 2.0 AMPERES 1000 VOLTS 25 and 50 WATTS
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MJE/MJF18002
O-220
O-220
MJF18002,
15to20
AN1040.
F18002
3704 transistor
WE VQE 11 E
Motorola Bipolar Power Transistor Data
FR 3708
e180
MJF18002
221A-06
221D
MJE18002
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10205 transistor
Abstract: JF18004
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet M JE 18004* M JF 18004* SWITCHMODE™ NPN Bipolar Power Transistor For Switching Power Supply Applications •Motorola Prttanrtd D«vlc* POWER TRANSISTOR 5.0 AMPERES 1000 VOLTS 35 and 75 WATTS
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MJE/MJF18004
O-220
MJF18004,
AN1040.
10205 transistor
JF18004
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by MJE18204/D SEMICONDUCTOR TECHNICAL DATA M JE 18204 M JF18204 D esigner’s Data Sheet SWITCHMODE™ NPN Bipolar Power Transistor for Electronic Light B allast and Sw itching Power Supply Applications POWER TRANSISTORS
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MJE18204/D
JF18204
MJE/MJF18204
221D-02
E69369
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MJE1800
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18006* M JF 18006* Designer’s Data Sheet SWITCHMODE™ *MotoroJ* Pnhmd NPN Bipolar Power Transistor For Switching Power Supply Applications POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 40 and 100 WATTS The MJE/MJF18006 have an applications specific state-of-the-art die designed
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MJE/MJF18006
O-220
MJF18006,
E6936ing
AN1040.
MJE1800
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA M JE 18604D 2 Advance Information High Speed, High Gain Bipolar NPN Power Transistor w ith Integrated C ollector-E m itter Diode and B uilt-in E fficient A ntisaturation N etw ork for 1600 V Applications POWER TRANSISTORS
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18604D
MJE18604D2
125-C
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by MJE18009/D SEMICONDUCTOR TECHNICAL DATA M JE 18009 M JF18009 Designer’s Data Sheet SW ITCHMODE ™NPN Silicon Planar Pow er Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific state-of-the-art die designed for
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MJE18009/D
MJE/MJF18009
221D-02
E69369
2PHX33547C-1
JE18009/D
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Untitled
Abstract: No abstract text available
Text: MOTOROLA O rder this docum ent by MJE18009/D SEMICONDUCTOR TECHNICAL DATA M JE 18009 M JF18009 D esigner’s Data Sheet SWITCHMODE™ NPN Silicon Planar Pow er Transistor POWER TRANSISTORS 10 AMPERES 1000 VOLTS 50 and 150 WATTS The MJE/MJF18009 has an application specific s ta te -o f-th e -a rt die designed for
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MJE18009/D
JF18009
MJE/MJF18009
221D-02
O-220
E69369
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1115a
Abstract: No abstract text available
Text: Order this document by 5VFPMB64D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1, 2M x 6 4 DRAM D ual-In-Line Memory Module DIMM 5 V, FPM, Buffered 8 and 16 Megabyte • JE D E C -S tandard 168-Lead D u a l-In -L in e Memory Module (DIMM) • Single 5 V Power Supply, T TL-C om patible Inputs and Outputs
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5VFPMB64D/D
168-Lead
8MB/16MB:
115A-01
Page19
MCM64BT116DG60
64BT216DG
64BT116DG60
64BT116DG70
1115a
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Untitled
Abstract: No abstract text available
Text: O rder this docum ent by 5VFPM U32D/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA 1,2, 4M DRAM Small Outline Dual-In-Line Memory Module SO-DIMM 1M x 32 (4MB), 2M x 32 (8M B) 7 2 -L E A D SM ALL O UTLINE DIMM CASE 992-01 JE D E C -S tandard 72 -L e a d Small Outline D u a l-In -L in e
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U32D/D
MA321
BT08TADN60
BT08TADN70
BT08TADG60
BT08TADG70
A322BT08TADG60
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HC4851A
Abstract: 74HC4851A 4851A MC74HC4853 4852A
Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA A n alo g M u ltip le x e rs / D e m u ltip le x e rs w ith In je c tio n C u rre n t E ffe c t C o n tro l M C 74H C 4851A M C 74H C 4852A M C 74H C 4853A Automotive Customized These devices are pin compatible to standard HC405x and MC1405xB
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HC405x
MC1405xB
3PHX32414--
MC74HC4851
HC4851A
74HC4851A
4851A
MC74HC4853
4852A
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MC663
Abstract: mOTOROLA mhtl
Text: M O TO R O LA SC { L O G IC * DUAL J-K FLIP-FLOP E : 5 i j b 3 t,7 2 5 E OQf l D a 4 S ^ 4 J ^ D M H T L M C 6 6 0 series MC663 MC12663 j _ MOTOROLA -j-i - i/z i b -oi-oi, Q K RD Q |SS JE A The MC663 and the MC12663 consist o f two J-K flip-flops having
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MC663
MC12663
MC12663
MC663)
MC12663)
mOTOROLA mhtl
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hp printer board schematic
Abstract: tzb04z TZB04 78L05 Motorola MC145190EVK LPT1 IC 78L08 MC145191
Text: MOTOROLA Order this document by MC145190EVK/D SEMICONDUCTOR TECHNICAL DATA MC14 5 1 90EVK MC14 5 1 9 1 EVK Advance Information 1.1 GHz PLL Frequency Synthesizer Evaluation Kits T h is d o c u m e n t c o n ta in s in fo rm a tio n on a n e w p ro d u c t. S p e c ific a tio n s a n d in fo rm a tio n h e re in a re s u b je c t to c h a n g e w ith o u t notice.
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MC145190EVK/D
90EVK
MC145190/91EVK,
1ATX31405-1
hp printer board schematic
tzb04z
TZB04
78L05 Motorola
MC145190EVK
LPT1 IC
78L08
MC145191
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diode D45C
Abstract: JE 800 transistor L146 IC BD800
Text: STYLE 1: PIN 1. BASE 2. COLLECTOR CASE 340B-03 R e s is tiv e S w itc h in g Ic C o n t Am ps V C E O s u s V o lts M ax M in 8 500 700 f*FE M in /M a x @ lc |XS tf ps Amp M ax M ax M JF16006A 5 min 8 2.5 0.25 5 B U 1008A F 3 min 3 min 4.5 4.5 8* 8* 0.5*
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340B-03
JF16006A
JF10012#
100/12k
JF16212*
JF16018*
JF16206
D44VH10
D45VH
diode D45C
JE 800 transistor
L146 IC
BD800
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2n5882 motorola
Abstract: 2NS882
Text: MOTOROLA Order this document by 2M5882/D SEM ICONDUCTOR TECHNICAL DATA 2N5882 Silicon NPN High-Power Transistor Motorola Preferred Device . . . designed for general-purpose power amplifier and switching applications. • Collector-Emitter Sustaining Voltage —
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2M5882/D
2N5882/D
2n5882 motorola
2NS882
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JE4353
Abstract: 2U 34 mje4343 motorola MJE4340
Text: MOTOROLA SC 12E XS TRS/R F 0 § MOTOROLA SEM ICONDUCTOR TECHNICAL DATA 0005355 7 | NPN PNP MJE4340 MJE4341 MJE4342 MJE4343 MJË4350 MJE4351 MJE4352 MJE4353 T - 33-13 T ^ 31 -1 3 HIGH-VOLTAGE - HIGH POWER TRANSISTORS 16 AMPERE POWER TRANSISTORS COMPLEMENTARY SILICON
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MJE4340
MJE4341
MJE4342
MJE4343
MJE4351
MJE4352
MJE4353
JE4353
2U 34
mje4343 motorola
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Je 243
Abstract: JE371 je240 JE171 JE340 transistor BD 341 bd189
Text: STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE STYLE 3: PIN 1. BASE 2. COLLECTOR 3. EMITTER 1 CASE 77-07 TO-225AA R e s is tiv e S w itc h in g Ic C o n t Am ps v C E O (s u s ) Volts M ax M in NPN 0.3 350 0 .5 »f @ ic US ps @ lc *T MHz Amp M ax M ax Amp
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O-225AA)
2N5655
BD157
2N5656
MJE803#
MJE703#
750/18k
BD681#
BD682#
JE210Â
Je 243
JE371
je240
JE171
JE340
transistor BD 341
bd189
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