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    MOSFET YB Search Results

    MOSFET YB Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET YB Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    RZL035P01

    Abstract: TUMT6
    Text: 1.5V Drive Pch MOSFET RZL035P01 zDimensions Unit : mm zStructure Silicon P-channel MOSFET 0.2Max. TUMT6 zFeatures 1) Low on-resistance. 2) High power package. 3) Low voltage drive. (1.5V) Abbreviated symbol : YB zApplication Switching zPackaging specifications


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    RZL035P01 R0039A RZL035P01 TUMT6 PDF

    SS1001

    Abstract: MCH5837 mosfet yb SS10015M TA72
    Text: MCH5837 Ordering number : ENA0781 SANYO Semiconductors DATA SHEET MCH5837 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a schottky barrier diode SS10015M


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    MCH5837 ENA0781 SS10015M) A0781-6/6 SS1001 MCH5837 mosfet yb SS10015M TA72 PDF

    SS1001

    Abstract: ENA0781A MCH5837 SS10015M
    Text: MCH5837 Ordering number : ENA0781A SANYO Semiconductors DATA SHEET MCH5837 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET and a schottky barrier diode SS10015M


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    MCH5837 ENA0781A SS10015M) A0781-6/6 SS1001 ENA0781A MCH5837 SS10015M PDF

    300 volt 5 ampere mosfet

    Abstract: J732 20 ampere MOSFET 200 ampere MOSFET mosfet de 120 volts 10a J988 JS88
    Text: 7294621 PÓWEREX INC T f l D e | 72TMt.ai DDG57S7 □ m /HBtEX D T"-3?'-/7 J988 Powerex, Inc., Hillls Street, Ybungwood, Pennsylvania 15697 412 925-7272 Tentative Single EXMOS MOSFET 10 Amperes/450-500 Volts Description. Powerex Single EXMOS™ MOSFET


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    Amperes/450-500 0D057bE T-39-11 300 volt 5 ampere mosfet J732 20 ampere MOSFET 200 ampere MOSFET mosfet de 120 volts 10a J988 JS88 PDF

    24V 20A mosfet switch

    Abstract: Y90H RL335 Y90L AS60A
    Text: YB1901 2.0A High-Side Power Switch with Flag Description Features The YB1901 is a low operation voltage, single N-channel MOSFET high-side power switch, optimized for low power consumption system. A small internal charge-pump circuitry is built in the YB1901 to drive the internal MOSFET


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    YB1901 YB1901 RYB1901 OT23-5) 24V 20A mosfet switch Y90H RL335 Y90L AS60A PDF

    Motorola 0936

    Abstract: 305 Power Mosfet MOTOROLA 173 MHz RF CHIP
    Text: MOTOROLA . . _ Order this document byMRFit>4/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF184 RF POWER Field-Efffect Transistor N-Channel Enhancement-Mode Lateral MOSFET Designed for broadband commercial and industrial applications at frequen­ cies to 1.0 GHz. The high gain and broadband performance of this device


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    945rola, X34873Q-2 MRF184/D Motorola 0936 305 Power Mosfet MOTOROLA 173 MHz RF CHIP PDF

    J1025

    Abstract: No abstract text available
    Text: 7 2 9 4 6 2 1 POWEREX I NC Tfi DE | ? 2 T 4 t i S l DD05771 S I T-39-13 isomerst J1025 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Tentative Single EXMOS MOSFET 20 Amperes/50 Volts Description Powerex Single EXMOS™ MOSFET


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    DD05771 T-39-13 J1025 Amperes/50 O-220F J1025 peres/50 J102S PDF

    500V12A

    Abstract: No abstract text available
    Text: V X -Iv 'J-X /17-MOSFET VX -n SERIES POWER MOSFET W £ \H £ E ] O U T L IN E D IM E N S IO N S 2SK2193 FP12W50VX2 500v12a • R A TIN G S A b s o lu te M axim um R a tin g s m Item @ -V 7' Channel Temperature K U 4 > ■ v —x W ±Drain-Source Voltage


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    /17-MOSFET FP12W50VX2) 2SK2193 500v12a 500V12A PDF

    YB1683

    Abstract: DC DC converter 28V 36V B320 B330 MBRD330 SK33 SS32 SS33 converter 12v 3a digital 36V 3A diode
    Text: YB1683 3A 380KHz 28V PWM Buck DC/DC Converter Description Features The YB1683 is a 380 KHz fixed frequency monolithic step down switch mode regulator with a built in internal Power MOSFET. It achieves 3A continuous output current over a wide input supply range with


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    YB1683 380KHz YB1683 MBRD330 DC DC converter 28V 36V B320 B330 MBRD330 SK33 SS32 SS33 converter 12v 3a digital 36V 3A diode PDF

    step down Voltage Regulator sop8 2a

    Abstract: B220 B230 SK23 SR22 SR23 SS23 20QB030 voltage regulator 12v 2a SOP8 Package
    Text: YB1685 2A 380KHz 32V PWM Buck DC/DC Converter Description Features The YB1685 is a 380 KHz fixed frequency monolithic step down switch mode regulator with a built in internal Power MOSFET. It achieves 2A continuous output current over a wide input supply range with


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    YB1685 380KHz YB1685 step down Voltage Regulator sop8 2a B220 B230 SK23 SR22 SR23 SS23 20QB030 voltage regulator 12v 2a SOP8 Package PDF

    yb1682

    Abstract: 12v to 20v dc to dc converter buck converter 5v 2A 12v to 20v converter SK23 B220 SR22 1222 sop8 YB1682SPX8P dc to dc step up 12v to 36v circuit
    Text: YB1682 2A 380KHz 20V PWM Buck DC/DC Converter Description Features The YB1682 is a 380 KHz fixed frequency monolithic step down switch mode regulator with a built in internal Power MOSFET. It achieves 2A continuous output current over a wide input supply range with


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    YB1682 380KHz YB1682 12v to 20v dc to dc converter buck converter 5v 2A 12v to 20v converter SK23 B220 SR22 1222 sop8 YB1682SPX8P dc to dc step up 12v to 36v circuit PDF

    e1007

    Abstract: E1005 power MOSFET reliability report reliability report RELAY solid state E10-26 E10-22 type thyristor thyristor inverter for IR hexfet die
    Text: International IORl Rectifier Available Literature DATABOOKS Order No. Databooks feature each respective product and contain data sheets, applicable case style and application notes. HEXFET— Power Mosfet.


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    PT-1984 e1007 E1005 power MOSFET reliability report reliability report RELAY solid state E10-26 E10-22 type thyristor thyristor inverter for IR hexfet die PDF

    Y521

    Abstract: WLED driver YB1521
    Text: YB1521 High Power Step-Up DC-DC Converter & WLED Driver Features Description 2.5V to 5.5V Input Voltage Range Built In Power MOSFET Drive Up to 15V @400mA at 5V Vin Less than 1µA Shutdown Current Up to 94% efficiency Over Voltage Protection@18V UVLO, Thermal Shutdown


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    YB1521 400mA 200mv OT23-5 YB1521 3S15P) OT23-5) Y521 WLED driver PDF

    Untitled

    Abstract: No abstract text available
    Text: HD151005 -Octal Inverter Buffers / Drivers With Open Drain High Voltage Outputs The HD151005 features octal inverter buffers and drivers with open drain high voltage outputs with N channel power MOSFET. Pin Arrangement Features


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    HD151005 HD151005 HD1510O5 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5LN01SS Ordering number : EN6560A 5LN01SS N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    5LN01SS EN6560A PDF

    mosfet yb

    Abstract: CPH3326 MarKING yb TA-100225
    Text: CPH3326 Ordering number : ENN7913 P-Channel Silicon MOSFET CPH3326 General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 4V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    CPH3326 ENN7913 900mm2 mosfet yb CPH3326 MarKING yb TA-100225 PDF

    Untitled

    Abstract: No abstract text available
    Text: 5LN01S Ordering number : EN6561A 5LN01S N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    EN6561A 5LN01S PDF

    Untitled

    Abstract: No abstract text available
    Text: 5LN01C Ordering number : EN6555A 5LN01C N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol


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    5LN01C EN6555A PDF

    TA2046

    Abstract: 5LN01SP-AC
    Text: 5LN01SP Ordering number : EN6559A SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 5LN01SP Ultrahigh-Speed Switching Applications Features • • • Low ON-resistance Ultrahigh-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C


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    EN6559A 5LN01SP PW10s, TA2046 5LN01SP-AC PDF

    NB 40 smd transistor

    Abstract: 2K28 NB smd transistor TRANSISTOR ML 13 SMD
    Text: Philips Semiconductors Product specification TOPFET high side switch SMD version of BUK201-50X DESCRIPTION BUK205-50X QUICK REFERENCE DATA Monolithic temperature and overload protected power switch based on MOSFET technology in a 5 pin plastic surface mount


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    BUK201-50X BUK205-50X NB 40 smd transistor 2K28 NB smd transistor TRANSISTOR ML 13 SMD PDF

    mosfet yb

    Abstract: 5LN01S
    Text: 5LN01S Ordering number : EN6561A SANYO Semiconductors DATA SHEET 5LN01S N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C


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    5LN01S EN6561A mosfet yb 5LN01S PDF

    Untitled

    Abstract: No abstract text available
    Text: 5LN01C Ordering number : EN6555B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 5LN01C General-Purpose Switching Device Applications Features • • • Low ON-resistance Ultrahigh-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C


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    5LN01C EN6555B PDF

    tb 6560

    Abstract: mosfet yb 5LN01SS
    Text: 5LN01SS Ordering number : EN6560A SANYO Semiconductors DATA SHEET 5LN01SS N-Channel Silicon MOSFET General-Purpose Switching Device Applications Features • • • Low ON-resistance. Ultrahigh-speed switching. 2.5V drive. Specifications Absolute Maximum Ratings at Ta=25°C


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    5LN01SS EN6560A tb 6560 mosfet yb 5LN01SS PDF

    Untitled

    Abstract: No abstract text available
    Text: 5LN01S Ordering number : EN6561B SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET 5LN01S General-Purpose Switching Device Applications Features • • • Low ON-resistance Ultrahigh-speed switching 2.5V drive Specifications Absolute Maximum Ratings at Ta=25°C


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    5LN01S EN6561B PDF