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    MOSFET TSOP-6 23 Search Results

    MOSFET TSOP-6 23 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation
    XPJ1R004PB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 160 A, 0.001 Ω@10V, S-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK4K1A60F Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 600 V, 2.0 A, 4.1 Ohm@10V, TO-220SIS Visit Toshiba Electronic Devices & Storage Corporation

    MOSFET TSOP-6 23 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    N419

    Abstract: NTGD4167CT1G NTGD4167
    Text: NTGD4167C Power MOSFET Complementary, 30 V, +2.9/-2.2 A, TSOP-6 Dual Features •ăComplementary N-Channel and P-Channel MOSFET •ăSmall Size 3 x 3 mm Dual TSOP-6 Package •ăLeading Edge Trench Technology for Low On Resistance •ăReduced Gate Charge to Improve Switching Response


    Original     		PDF NTGD4167C NTGD4167C/D N419 NTGD4167CT1G NTGD4167

    Si3483DV

    Abstract: No abstract text available
    Text: Si3483DV New Product Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = -10 V -6.2 0.053 @ VGS = -4.5 V - 5.0 APPLICATIONS D Load Switch -30 TSOP-6 Top View 1 (4) S 6 (3) G


    Original     		PDF Si3483DV S-22198--Rev. 25-Nov-02

    Si3459DV-T1-E3

    Abstract: SI3459DV
    Text: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.220 @ VGS = −10 V "2.2 0.310 @ VGS = −4.5 V "1.9 D TrenchFETr Power MOSFET Available TSOP-6 Top View 1 6 2 5 3 4 (4) S (3) G 3 mm (1, 2, 5, 6) D


    Original     		PDF Si3459DV Si3459DV-T1 Si3459DV-T1--E3 S-51166--Rev. 13-Jun-05 Si3459DV-T1-E3

    Si3483DV

    Abstract: No abstract text available
    Text: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = −10 V −6.2 0.053 @ VGS = −4.5 V −5.0 APPLICATIONS D Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4


    Original     		PDF Si3483DV Si3483DV-T1--E3 08-Apr-05

    Si3483DV

    Abstract: No abstract text available
    Text: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = −10 V −6.2 0.053 @ VGS = −4.5 V −5.0 APPLICATIONS D Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4


    Original     		PDF Si3483DV Si3483DV-T1--E3 18-Jul-08

    Si3483DV

    Abstract: si3483dvt1e3
    Text: Si3483DV Vishay Siliconix P-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −30 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.035 @ VGS = −10 V −6.2 0.053 @ VGS = −4.5 V −5.0 APPLICATIONS D Load Switch TSOP-6 Top View 3 mm 1 6 2 5 3 4


    Original     		PDF Si3483DV Si3483DV-T1--E3 S-40238--Rev. 16-Feb-04 si3483dvt1e3

    Si3455ADV

    Abstract: No abstract text available
    Text: Si3455ADV New Product Vishay Siliconix P-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.100 @ VGS = –10 V "3.5 0.170 @ VGS = –4.5 V "2.7 –30 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET


    Original     		PDF Si3455ADV S-99350--Rev. 22-Nov-99

    Untitled

    Abstract: No abstract text available
    Text: NTHD4P02F Power MOSFET and Schottky Diode 20 V, 2.1 A, P-Channel, with 1.0 A, Schottky Barrier Diode, ChipFET Features http://onsemi.com • Leadless SMD Package Featuring a MOSFET and Schottky Diode • 40% Smaller than TSOP-6 Package with Similar Thermal


    Original     		PDF NTHD4P02F NTHD4P02F/D

    Si3459DV

    Abstract: Si3459DV-T1-E3 Si3459DV-T1 51166 70877
    Text: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.220 at VGS = - 10 V ± 2.2 0.310 at VGS = - 4.5 V ± 1.9 • TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT TSOP-6 Top View 1 6 2


    Original     		PDF Si3459DV Si3459DV-T1 Si3459DV-T1-E3 08-Apr-05 51166 70877

    SI3459DV

    Abstract: No abstract text available
    Text: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.220 @ VGS = −10 V "2.2 0.310 @ VGS = −4.5 V "1.9 D TrenchFETr Power MOSFET RoHS COMPLIANT Available TSOP-6 Top View 1 6 2 5 3 4 (4) S (3) G


    Original     		PDF Si3459DV Si3459DV-T1 S-51166â 13-Jun-05

    61828

    Abstract: Si3948DV mosfet 23 Tsop-6 S-61828
    Text: Si3948DV New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V "2.5 0.175 @ VGS = 4.5 V "2.0 D1 D2 TSOP-6 Top View 3 mm G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET


    Original     		PDF Si3948DV 08-Apr-05 61828 mosfet 23 Tsop-6 S-61828

    Si3948DV

    Abstract: No abstract text available
    Text: Si3948DV New Product Vishay Siliconix Dual N-Channel 30-V D-S MOSFET PRODUCT SUMMARY VDS (V) 30 rDS(on) (W) ID (A) 0.105 @ VGS = 10 V "2.5 0.175 @ VGS = 4.5 V "2.0 D1 D2 TSOP-6 Top View 3 mm G1 1 6 D1 S2 2 5 S1 G2 3 4 D2 G1 G2 S1 S2 N-Channel MOSFET N-Channel MOSFET


    Original     		PDF Si3948DV 18-Jul-08

    TSOP-6

    Abstract: SI3459DV
    Text: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 60 rDS(on) (Ω) ID (A) 0.220 at VGS = - 10 V ± 2.2 0.310 at VGS = - 4.5 V ± 1.9 • TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT TSOP-6 Top View 1 6 2


    Original     		PDF Si3459DV Si3459DV-T1 Si3459DV-T1-E3 18-Jul-08 TSOP-6

    SI3459DV

    Abstract: No abstract text available
    Text: Si3459DV Vishay Siliconix P-Channel 60-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) −60 rDS(on) (W) ID (A) 0.220 @ VGS = −10 V "2.2 0.310 @ VGS = −4.5 V "1.9 D TrenchFETr Power MOSFET RoHS COMPLIANT Available TSOP-6 Top View 1 6 2 5 3 4 (4) S (3) G


    Original     		PDF Si3459DV Si3459DV-T1 Si3459DV-T1--E3 08-Apr-05

    Untitled

    Abstract: No abstract text available
    Text: Si3447DV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.050 @ VGS = - 4.5 V "5.2 0.070 @ VGS = - 2.5 V "4.4 0.095 @ VGS = - 1.8 V "3.8 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET


    Original     		PDF Si3447DV 08-Apr-05

    Si3420DV

    Abstract: No abstract text available
    Text: Si3420DV New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 3.7 @ VGS = 10 V "0.5 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si3420DV S-99345--Rev. 22-Nov-99

    W075

    Abstract: Si3422DV
    Text: Si3422DV New Product Vishay Siliconix N-Channel 200-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 200 5 @ VGS = 10 V "0.42 (1, 2, 5, 6) D TSOP-6 Top View 3 mm 1 6 2 5 3 4 (3) G (4) S 2.85 mm N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)


    Original     		PDF Si3422DV S-99344--Rev. 22-Nov-98 W075

    Si3447DV

    Abstract: No abstract text available
    Text: Si3447DV Vishay Siliconix P-Channel 1.8-V G-S MOSFET PRODUCT SUMMARY VDS (V) - 12 rDS(on) (W) ID (A) 0.050 @ VGS = - 4.5 V "5.2 0.070 @ VGS = - 2.5 V "4.4 0.095 @ VGS = - 1.8 V "3.8 (4) S TSOP-6 Top View 1 6 (3) G 3 mm 2 5 3 4 (1, 2, 5, 6) D 2.85 mm P-Channel MOSFET


    Original     		PDF Si3447DV 18-Jul-08

    Si5915DC

    Abstract: Si5915DC-T1
    Text: Si5915DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D Low Thermal Resistance D 40% Smaller Footprint Than TSOP-6 VDS (V) rDS(on) (Ω) ID (A) 0.070 @ VGS = -4.5 V -4.6 -8 0.108 @ VGS = -2.5 V -3.7


    Original     		PDF Si5915DC Si5915DC-T1 S-21251--Rev. 05-Aug-02

    Si5915DC

    Abstract: Si5915DC-T1
    Text: Si5915DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D Low Thermal Resistance D 40% Smaller Footprint Than TSOP-6 VDS (V) rDS(on) (Ω) ID (A) 0.070 @ VGS = -4.5 V -4.6 -8 0.108 @ VGS = -2.5 V -3.7


    Original     		PDF Si5915DC Si5915DC-T1 18-Jul-08

    Untitled

    Abstract: No abstract text available
    Text: Si5915DC Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D Low Thermal Resistance D 40% Smaller Footprint Than TSOP-6 VDS (V) rDS(on) (Ω) ID (A) 0.070 @ VGS = -4.5 V -4.6 -8 0.108 @ VGS = -2.5 V -3.7


    Original     		PDF Si5915DC Si5915DC-T1 08-Apr-05

    AAT8513

    Abstract: AAT8513IJS-T1 SC70JW-8 "low threshold mosfet"
    Text: AAT8513 28V P-Channel Power MOSFET General Description Features The AAT8513 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech 's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in a TSOP-6 footprint has been


    Original     		PDF AAT8513 AAT8513 AAT8513IJS-T1 SC70JW-8 "low threshold mosfet"

    AAT8512

    Abstract: AAT8512IJS-T1 SC70JW-8 "low threshold mosfet"
    Text: AAT8512 28V P-Channel Power MOSFET General Description Features The AAT8512 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech 's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in a TSOP-6 footprint has been


    Original     		PDF AAT8512 AAT8512 AAT8512IJS-T1 SC70JW-8 "low threshold mosfet"

    RD51

    Abstract: AAT9513 AAT9513IJS-T1 SC70JW-8 ASC70 tsop-6 footprint
    Text: AAT9513 28V N-Channel Power MOSFET General Description Features The AAT9513 is a low threshold MOSFET designed for the battery, cell phone, and PDA markets. Using AnalogicTech 's ultra high density MOSFET process and space saving small outline J-lead package, performance superior to that normally found in a TSOP-6 footprint has been


    Original     		PDF AAT9513 AAT9513 RD51 AAT9513IJS-T1 SC70JW-8 ASC70 tsop-6 footprint